| Efficient TCAD model for the evolution of interstitial clusters,{311} defects, and dislocation loops in silicon N Zographos, C Zechner, I Avci MRS Online Proceedings Library (OPL) 994, 0994-F10-01, 2007 | 30 | 2007 |
| From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon I Martin-Bragado, I Avci, N Zographos, M Jaraiz, P Castrillo Solid-state electronics 52 (9), 1430-1436, 2008 | 23 | 2008 |
| Multiscale modeling of doping processes in advanced semiconductor devices N Zographos, C Zechner, I Martin-Bragado, K Lee, YS Oh Materials Science in Semiconductor Processing 62, 49-61, 2017 | 22 | 2017 |
| A comprehensive atomistic kinetic Monte Carlo model for amorphization/recrystallization and its effects on dopants N Zographos, I Martin-Bragado MRS Online Proceedings Library 1070, 1-6, 2007 | 21 | 2007 |
| Ab initio calculations of phosphorus and arsenic clustering parameters for the improvement of process simulation models B Sahli, K Vollenweider, N Zographos, C Zechner Materials Science and Engineering: B 154, 193-197, 2008 | 17 | 2008 |
| Silicon germanium interdiffusion in SiGe device fabrication: A calibrated TCAD model C Zechner, N Zographos Materials Science in Semiconductor Processing 42, 230-234, 2016 | 11 | 2016 |
| Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo I Martin-Bragado, N Zographos Solid-state electronics 55 (1), 25-28, 2011 | 10 | 2011 |
| Process simulation of dopant diffusion and activation in germanium N Zographos, A Erlebach physica status solidi (a) 211 (1), 143-146, 2014 | 8 | 2014 |
| Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs EM Bazizi, A Pakfar, PF Fazzini, F Cristiano, C Tavernier, A Claverie, ... Thin Solid Films 518 (9), 2427-2430, 2010 | 8 | 2010 |
| Modeling ultra shallow junctions formed by phosphorus-carbon and boron-carbon co-implantation C Zechner, D Matveev, N Zographos, V Moroz, B Pawlak MRS Online Proceedings Library 994, 1-6, 2006 | 8 | 2006 |
| Experimental and theoretical analysis of dopant diffusion and C evolution in high-C Si: C epi layers: Optimization of Si: C source and drain formed by post-epi implant and … Y Cho, N Zographos, S Thirupapuliyur, V Moroz 2007 IEEE International Electron Devices Meeting, 959-962, 2007 | 7 | 2007 |
| Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {3 1 1} defects in silicon C Zechner, N Zographos, D Matveev, A Erlebach Materials Science and Engineering: B 124, 401-403, 2005 | 7 | 2005 |
| Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo model K Vollenweider, B Sahli, N Zographos, C Zechner Journal of Vacuum Science & Technology B 28 (1), C1G1-C1G6, 2010 | 6 | 2010 |
| Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment C Zechner, M Tanaka, K Shimai, N Zographos, S Kanie, S Tsuboi Journal of Applied Physics 132 (3), 2022 | 5 | 2022 |
| Predictive process simulation of cryogenic implants for leading edge transistor design HJ Gossmann, N Zographos, H Park, B Colombeau, T Parrill, ... AIP Conference Proceedings 1496 (1), 225-228, 2012 | 5 | 2012 |
| Process modeling of chemical and stress effects in SiGe N Zographos, C Zechner, P Castrillo, I Martin-Bragado AIP Conference Proceedings 1496 (1), 212-216, 2012 | 5 | 2012 |
| Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs EM Bazizi, PF Fazzini, F Cristiano, A Pakfar, C Tavernier, F Payet, ... 2010 International Electron Devices Meeting, 15.1. 1-15.1. 4, 2010 | 5 | 2010 |
| Issues with n-type Dopants in Germanium D Skarlatos, V Ioannou-Sougleridis, M Barozzi, G Pepponi, NZ Vouroutzis, ... ECS Transactions 86 (10), 51, 2018 | 4 | 2018 |
| Process modeling of stress and chemical effects in SiGe alloys using kinetic Monte Carlo N Zographos, I Martin-Bragado Journal of Computational Electronics 13, 59-69, 2014 | 4 | 2014 |
| Simulation of dopant diffusion and activation during flash lamp annealing C Zechner, D Matveev, N Zographos, W Lerch, S Paul Materials Science and Engineering: B 154, 20-23, 2008 | 4 | 2008 |
I. Martin-BragadoSoftware and simulation engineerΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα ucam.edu
