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Eoin O'Reilly
Eoin O'Reilly
Professor Emeritus, Tyndall National Institute
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα tyndall.ie
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Παρατίθεται από
Παρατίθεται από
Έτος
Electronic and atomic structure of amorphous carbon
J Robertson, EP O’reilly
Physical Review B 35 (6), 2946, 1987
17941987
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick, JJ Finley, JA Barker, ...
Physical review letters 84 (4), 733, 2000
7182000
Valence band engineering in strained-layer structures
EP O'Reilly
Semiconductor Science and Technology 4, 121, 1989
5471989
Theory of defects in vitreous silicon dioxide
EP O'Reilly, J Robertson
Physical Review B 27 (6), 3780, 1983
5441983
Theory of the electronic structure of GaN/AlN hexagonal quantum dots
AD Andreev, EP O’Reilly
Physical Review B 62 (23), 15851, 2000
4452000
Theory of enhanced bandgap non-parabolicity in GaN x As 1− x and related alloys
A Lindsay, EP O'Reilly
Solid state communications 112 (8), 443-447, 1999
3241999
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
M Usman, CA Broderick, A Lindsay, EP O’Reilly
Physical Review B—Condensed Matter and Materials Physics 84 (24), 245202, 2011
2862011
Strain distributions in quantum dots of arbitrary shape
AD Andreev, JR Downes, DA Faux, EP OReilly
Journal of applied physics 86 (1), 297-305, 1999
2861999
Band-structure engineering in strained semiconductor lasers
EP O'Reilly, AR Adams
IEEE Journal of Quantum electronics 30 (2), 366-379, 1994
2601994
Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys
A Lindsay, EP O'Reilly
Physical review letters 93 (19), 196402, 2004
2442004
(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
PJ Klar, H Grüning, J Koch, S Schäfer, K Volz, W Stolz, W Heimbrodt, ...
Physical Review B 64 (12), 121203, 2001
2442001
Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
JA Barker, EP O’Reilly
Physical Review B 61 (20), 13840, 2000
2412000
Dipole nano-laser
IE Protsenko, AV Uskov, KE Krotova, EP O'Reilly
Journal of Physics: Conference Series 107 (1), 012010, 2008
2212008
Dipole nanolaser
IE Protsenko, AV Uskov, OA Zaimidoroga, VN Samoilov, EP O’Reilly
Physical Review A—Atomic, Molecular, and Optical Physics 71 (6), 063812, 2005
2212005
Band engineering in dilute nitride and bismide semiconductor lasers
CA Broderick, M Usman, SJ Sweeney, EP O’Reilly
Semiconductor Science and Technology 27 (9), 094011, 2012
2112012
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002
2102002
Dynamics of light propagation in spatiotemporal dielectric structures
F Biancalana, A Amann, AV Uskov, EP O’reilly
Physical Review E—Statistical, Nonlinear, and Soft Matter Physics 75 (4 …, 2007
2052007
Tight-binding and k· p models for the electronic structure of Ga (In) NAs and related alloys
EP O'Reilly, A Lindsay, S Tomić, M Kamal-Saadi
Semiconductor science and technology 17 (8), 870, 2002
1902002
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003
1792003
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
S Schulz, MA Caro, C Coughlan, EP O'Reilly
Physical Review B 91 (3), 035439, 2015
1642015
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