Method for manufacturing a low defect interface between a dielectric and a III-V compound C Merckling
US Patent 8,314,017, 2012
494 2012 Room-temperature InP distributed feedback laser array directly grown on silicon Z Wang, B Tian, M Pantouvaki, W Guo, P Absil, J Van Campenhout, ...
Nature Photonics 9 (12), 837-842, 2015
396 2015 Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ...
Applied Physics Letters 99 (15), 2011
256 2011 Novel light source integration approaches for silicon photonics Z Wang, A Abbasi, U Dave, A De Groote, S Kumari, B Kunert, C Merckling, ...
Laser & Photonics Reviews 11 (4), 1700063, 2017
224 2017 Site selective integration of III–V materials on Si for nanoscale logic and photonic devices M Paladugu, C Merckling, R Loo, O Richard, H Bender, J Dekoster, ...
Crystal Growth & Design 12 (10), 4696-4702, 2012
136 2012 InGaAs gate-all-around nanowire devices on 300mm Si substrates N Waldron, C Merckling, L Teugels, P Ong, SAU Ibrahim, F Sebaai, ...
IEEE Electron Device Letters 35 (11), 1097-1099, 2014
121 2014 Heteroepitaxy of InP on Si (001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering C Merckling, N Waldron, S Jiang, W Guo, N Collaert, M Caymax, ...
Journal of Applied Physics 115 (2), 2014
120 2014 An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates N Waldron, C Merckling, W Guo, P Ong, L Teugels, S Ansar, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
110 2014 Observation of the radiative decay of the 229 Th nuclear clock isomer S Kraemer, J Moens, M Athanasakis-Kaklamanakis, S Bara, K Beeks, ...
Nature 617 (7962), 706-710, 2023
104 2023 Border traps in Ge/III–V channel devices: Analysis and reliability aspects E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013
89 2013 Polytypic InP nanolaser monolithically integrated on (001) silicon Z Wang, B Tian, M Paladugu, M Pantouvaki, N Le Thomas, C Merckling, ...
Nano letters 13 (11), 5063-5069, 2013
85 2013 Capacitance–voltage characterization of GaAs–oxide interfaces G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ...
Journal of the Electrochemical Society 155 (12), H945, 2008
85 2008 Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
84 2011 Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si (001) G Delhaye, C Merckling, M El-Kazzi, G Saint-Girons, M Gendry, Y Robach, ...
Journal of Applied Physics 100 (12), 2006
84 2006 Electrical properties of III-V/oxide interfaces G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
83 2009 Germanium for advanced CMOS anno 2009: A SWOT analysis M Caymax, G Eneman, F Bellenger, C Merckling, A Delabie, G Wang, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
77 2009 Room temperature O-band DFB laser array directly grown on (001) silicon B Tian, Z Wang, M Pantouvaki, P Absil, J Van Campenhout, C Merckling, ...
Nano letters 17 (1), 559-564, 2017
75 2017 Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing YC Chang, C Merckling, J Penaud, CY Lu, WE Wang, J Dekoster, ...
Applied physics letters 97 (11), 2010
75 2010 High FET Performance for a Future CMOS F Bellenger, B De Jaeger, C Merckling, M Houssa, J Penaud, L Nyns, ...
IEEE Electron Device Letters 31 (5), 402-404, 2010
75 2010 Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx VV Afanas' Ev, M Houssa, A Stesmans, C Merckling, T Schram, JA Kittl
Applied Physics Letters 99 (7), 2011
72 2011 
Guy BrammertzResearcher, imec-imomecΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα imec.be
