RFIC and MMIC Design and Technology ID Robertson
Iet, 2001
431 2001 D. McDaniel, WCH Joiner and J. Oostens, and W. Huff C Blue, K Elgaid, I Zitkovsky, P Boolchand
Phys. Rev. B 37, 5905, 1988
88 1988 50-nm T-gate metamorphic GaAs HEMTs with f/sub T/of 440 GHz and noise figure of 0.7 dB at 26 GHz K Elgaid, H McLelland, M Holland, DAJ Moran, CR Stanley, IG Thayne
IEEE Electron Device Letters 26 (11), 784-786, 2005
81 2005 Scaling of pseudomorphic high electron mobility transistors to decanano dimensions K Kalna, S Roy, A Asenov, K Elgaid, I Thayne
Solid-State Electronics 46 (5), 631-638, 2002
74 2002 Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition H Zhou, K Elgaid, C Wilkinson, I Thayne
Japanese journal of applied physics 45 (10S), 8388, 2006
54 2006 Metallic doping sites in P Boolchand, C Blue, K Elgaid, I Zitkovsky, D McDaniel, W Huff, ...
Physical Review B 38 (16), 11313, 1988
46 1988 Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates H Chandrasekar, MJ Uren, A Eblabla, H Hirshy, MA Casbon, PJ Tasker, ...
IEEE Electron Device Letters 39 (10), 1556-1559, 2018
38 2018 50-nm self-aligned and “standard” T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node DAJ Moran, H McLelland, K Elgaid, G Whyte, CR Stanley, I Thayne
IEEE Transactions on Electron Devices 53 (12), 2920-2925, 2006
37 2006 High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for A Eblabla, X Li, I Thayne, DJ Wallis, I Guiney, K Elgaid
IEEE Electron Device Letters 36 (9), 899-901, 2015
36 2015 Recent development and futuristic applications of MEMS based piezoelectric microphones A Kumar, A Varghese, A Sharma, M Prasad, V Janyani, RP Yadav, ...
Sensors and Actuators A: Physical 347, 113887, 2022
34 2022 40 to 90 GHz impedance-transforming CPW Marchand balun KS Ang, ID Robertson, K Elgaid, IG Thayne
2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 00CH37017 …, 2000
32 2000 Optimization of ohmic contact for AlGaN/GaN HEMT on low-resistivity silicon B Benakaprasad, AM Eblabla, X Li, KG Crawford, K Elgaid
IEEE Transactions on Electron Devices 67 (3), 863-868, 2020
30 2020 Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology H Chandrasekar, MJ Uren, MA Casbon, H Hirshy, A Eblabla, K Elgaid, ...
IEEE Transactions on Electron Devices 66 (4), 1681-1687, 2019
30 2019 GaN-on-diamond technology platform: Bonding-free membrane manufacturing process MD Smith, JA Cuenca, DE Field, Y Fu, C Yuan, F Massabuau, S Mandal, ...
AIP Advances 10 (3), 2020
28 2020 GaN on low-resistivity silicon THz high-Q passive device technology AM Eblabla, X Li, DJ Wallis, I Guiney, K Elgaid
IEEE Transactions on Terahertz Science and Technology 7 (1), 93-97, 2016
28 2016 Origin (s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon S Ghosh, A Hinz, SM Fairclough, BF Spiridon, A Eblabla, MA Casbon, ...
ACS Applied Electronic Materials 3 (2), 813-824, 2021
24 2021 Design and characterization of elevated CPW and thin film microstrip structures for millimeter-wave applications K Hettak, MG Stubbs, K Elgaid, G Thayne
2005 European Microwave Conference 2, 4 pp.-884, 2005
24 2005 Multi-channel AlGaN/GaN lateral Schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications A Eblabla, X Li, M Alathbah, Z Wu, J Lees, K Elgaid
IEEE Electron Device Letters 40 (6), 878-880, 2019
22 2019 An approximate analytical model for the quasi-static parameters of elevated CPW lines I McGregor, F Aghamoradi, K Elgaid
IEEE transactions on microwave theory and techniques 58 (12), 3809-3814, 2010
22 2010 Novel shielded coplanar waveguides on GaN-on-low resistivity Si substrates for MMIC applications A Eblabla, DJ Wallis, I Guiney, K Elgaid
IEEE microwave and wireless components letters 25 (7), 427-429, 2015
21 2015 