Παρακολούθηση
Alain Dijkstra
Alain Dijkstra
Postdoctoral Researcher, Technical University of Munich
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα wsi.tum.de
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Παρατίθεται από
Παρατίθεται από
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Direct-bandgap emission from hexagonal Ge and SiGe alloys
EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ Van Tilburg, C Mao, ...
Nature 580 (7802), 205-209, 2020
3632020
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ...
Nano letters 17 (3), 1538-1544, 2017
1032017
Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
S Assali, J Nicolas, S Mukherjee, A Dijkstra, O Moutanabbir
Applied Physics Letters 112 (25), 2018
962018
Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters
MS Seifner, A Dijkstra, J Bernardi, A Steiger-Thirsfeld, M Sistani, ...
ACS nano 13 (7), 8047-8054, 2019
502019
Kinetic control of morphology and composition in Ge/GeSn core/shell nanowires
S Assali, R Bergamaschini, E Scalise, MA Verheijen, M Albani, A Dijkstra, ...
ACS nano 14 (2), 2445-2455, 2020
262020
Unveiling planar defects in hexagonal group IV materials
EMT Fadaly, A Marzegalli, Y Ren, L Sun, A Dijkstra, D De Matteis, ...
Nano Letters 21 (8), 3619-3625, 2021
242021
Nanowire polymer transfer for enhanced solar cell performance and lower cost
A Cavalli, A Dijkstra, JEM Haverkort, EPAM Bakkers
Nano-Structures & Nano-Objects 16, 59-62, 2018
232018
Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Semiconductors
S Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ...
Physical Review Applied 15 (2), 024031, 2021
222021
Optical properties of direct band gap group IV semiconductors
A Dijkstra
32021
Epitaxial GeSn and its integration in MIR optoelectronics
S Assali, A Attiaoui, MRM Atalla, A Dijkstra, A Kumar, S Mukherjee, S Abdi, ...
CLEO: Science and Innovations, SM3M. 2, 2020
32020
Mid-infrared emission and absorption in strained and relaxed GeSn semiconductors
S Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ...
arXiv e-prints, arXiv: 2004.13858, 2020
32020
Light emission from direct bandgap hexagonal SiGe
JEM Haverkort, Y Ren, A Dijkstra, E Fadaly, MA Verheijen, G Reithmaier, ...
Integrated Photonics Research, Silicon and Nanophotonics, ITu4I. 5, 2018
32018
Nanosecond Carrier Lifetime of Hexagonal Ge
VT van Lange, A Dijkstra, EMT Fadaly, WHJ Peeters, MAJ van Tilburg, ...
ACS photonics 11 (10), 4258-4267, 2024
12024
Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation)
D Busse, E Fadaly, VT van Lange, JR Suckert, A Dijkstra, M van Tilburg, ...
Novel In-Plane Semiconductor Lasers XIX 11301, 113010K, 2020
12020
New opportunities with nanowires
E Bakkers, HIT Hauge, A Li, S Assali, A Dijkstra, R Tucker, Y Ren, ...
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 124-125, 2016
12016
Gate-tunable Bose-Fermi mixture in a strongly correlated moir\'e bilayer electron system
AB Mhenni, W Kadow, MJ Metelski, AO Paulus, A Dijkstra, K Watanabe, ...
arXiv preprint arXiv:2410.07308, 2024
2024
Gate-tunable Bose-Fermi mixture in a strongly correlated moiré bilayer electron system
A Ben Mhenni, W Kadow, MJ Metelski, AO Paulus, A Dijkstra, K Watanabe, ...
arXiv e-prints, arXiv: 2410.07308, 2024
2024
Light-emitting or light-absorbing component
S Botti, F Bechstedt, JEM Haverkort, EPAM Bakkers, E Fadaly, A Dijkstra
US Patent 12,065,601, 2024
2024
Optical Matrix Element of Hexagonal Ge
VT Lange, A Dijkstra, EMT Fadaly, WHJ Peeters, MAJ Tilburg, E Bakkers, ...
CLEO: Science and Innovations, SM4H. 7, 2023
2023
Strained hexagonal germanium nanowires
WHJ Peeters, JEM Haverkort, A Dijkstra, EMT Fadaly
Master thesis, Technische universiteit Eindhoven, 2020
2020
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