Sub-10 nm two-dimensional transistors: Theory and experiment R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang, Q Li, B Shi, Y Li, ...
Physics Reports 938, 1-72, 2021
143 2021 Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ...
Reports on Progress in Physics 84 (5), 056501, 2021
142 2021 Many-body effect and device performance limit of monolayer InSe Y Wang, R Fei, R Quhe, J Li, H Zhang, X Zhang, B Shi, L Xiao, Z Song, ...
ACS applied materials & interfaces 10 (27), 23344-23352, 2018
119 2018 Monolayer tellurene–metal contacts J Yan, X Zhang, Y Pan, J Li, B Shi, S Liu, J Yang, Z Song, H Zhang, M Ye, ...
Journal of Materials Chemistry C 6 (23), 6153-6163, 2018
98 2018 Sub 10 nm Bilayer Bi2 O2 Se Transistors J Yang, R Quhe, Q Li, S Liu, L Xu, Y Pan, H Zhang, X Zhang, J Li, J Yan, ...
Advanced Electronic Materials 5 (3), 1800720, 2019
87 2019 Excellent device performance of sub‐5‐nm monolayer tellurene transistors J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ...
Advanced Electronic Materials 5 (7), 1900226, 2019
81 2019 Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices H Zhang, B Shi, L Xu, J Yan, W Zhao, Z Zhang, Z Zhang, J Lu
ACS Applied Electronic Materials 3 (4), 1560-1571, 2021
76 2021 Gate-tunable interfacial properties of in-plane ML MX 2 1T′–2H heterojunctions S Liu, J Li, B Shi, X Zhang, Y Pan, M Ye, R Quhe, Y Wang, H Zhang, J Yan, ...
Journal of Materials Chemistry C 6 (21), 5651-5661, 2018
67 2018 Schottky Contact in Monolayer WS2 Field‐Effect Transistors H Tang, B Shi, Y Pan, J Li, X Zhang, J Yan, S Liu, J Yang, L Xu, J Yang, ...
Advanced Theory and Simulations 2 (5), 1900001, 2019
60 2019 Monolayer honeycomb borophene: A promising anode material with a record capacity for lithium-ion and sodium-ion batteries J Li, GA Tritsaris, X Zhang, B Shi, C Yang, S Liu, J Yang, L Xu, J Yang, ...
Journal of The Electrochemical Society 167 (9), 090527, 2020
59 2020 Can carbon nanotube transistors be scaled down to the sub-5 nm gate length? L Xu, J Yang, C Qiu, S Liu, W Zhou, Q Li, B Shi, J Ma, C Yang, J Lu, ...
ACS Applied Materials & Interfaces 13 (27), 31957-31967, 2021
57 2021 Sub-5-nm monolayer silicane transistor: A first-principles quantum transport simulation Y Pan, J Dai, L Xu, J Yang, X Zhang, J Yan, J Li, B Shi, S Liu, H Hu, M Wu, ...
Physical Review Applied 14 (2), 024016, 2020
55 2020 Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors Y Pan, J Gu, H Tang, X Zhang, J Li, B Shi, J Yang, H Zhang, J Yan, S Liu, ...
ACS Applied Nano Materials 2 (8), 4717-4726, 2019
44 2019 Layer-Dependent Giant Magnetoresistance in Two-Dimensional J Yang, S Fang, Y Peng, S Liu, B Wu, R Quhe, S Ding, C Yang, J Ma, ...
Physical Review Applied 16 (2), 024011, 2021
40 2021 Monolayer GaS with high ion mobility and capacity as a promising anode battery material X Zhang, C Yang, Y Pan, M Weng, L Xu, S Liu, J Yang, J Yan, J Li, B Shi, ...
Journal of Materials Chemistry A 7 (23), 14042-14050, 2019
38 2019 n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors B Shi, Y Wang, J Li, X Zhang, J Yan, S Liu, J Yang, Y Pan, H Zhang, ...
Physical Chemistry Chemical Physics 20 (38), 24641-24651, 2018
36 2018 Performance limit of ultrathin GaAs transistors Q Li, S Fang, S Liu, L Xu, L Xu, C Yang, J Yang, B Shi, J Ma, J Yang, ...
ACS Applied Materials & Interfaces 14 (20), 23597-23609, 2022
34 2022 Interfacial properties of monolayer antimonene devices H Zhang, J Xiong, M Ye, J Li, X Zhang, R Quhe, Z Song, J Yang, Q Zhang, ...
Physical Review Applied 11 (6), 064001, 2019
34 2019 Sub-5 nm monolayer black phosphorene tunneling transistors H Li, B Shi, Y Pan, J Li, L Xu, L Xu, Z Zhang, F Pan, J Lu
Nanotechnology 29 (48), 485202, 2018
28 2018 Planar Direction‐Dependent Interfacial Properties in Monolayer In2 Se3 –Metal Contacts C Yang, X Zhang, X Sun, H Zhang, H Tang, B Shi, H Pang, L Xu, S Liu, ...
physica status solidi (b) 257 (1), 1900198, 2020
26 2020 