Παρακολούθηση
Alquier Daniel
Alquier Daniel
GREMAN, Université de Tours
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα univ-tours.fr
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Organic/inorganic hybrid stretchable piezoelectric nanogenerators for self‐powered wearable electronics
AS Dahiya, F Morini, S Boubenia, K Nadaud, D Alquier, G Poulin‐Vittrant
Advanced Materials Technologies 3 (2), 1700249, 2018
1342018
A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations
S Boubenia, AS Dahiya, G Poulin-Vittrant, F Morini, K Nadaud, D Alquier
Scientific reports 7 (1), 15187, 2017
772017
Evidence of electrical activity of extended defects in 3C–SiC grown on Si
X Song, JF Michaud, F Cayrel, M Zielinski, T Chassagne, E Collard, ...
Applied Physics Letters 96 (14), 2010
752010
Transient enhanced diffusion of boron in presence of end-of-range defects
C Bonafos, M Omri, B De Mauduit, G BenAssayag, A Claverie, D Alquier, ...
Journal of applied physics 82 (6), 2855-2861, 1997
741997
Transient enhanced diffusion in preamorphized silicon: the role of the surface
NEB Cowern, D Alquier, M Omri, A Claverie, A Nejim
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
731999
Fabrication of ZnO nanowire based piezoelectric generators and related structures
C Opoku, AS Dahiya, C Oshman, F Cayrel, G Poulin-Vittrant, D Alquier, ...
Physics Procedia 70, 858-862, 2015
692015
Fabrication of field-effect transistors and functional nanogenerators using hydrothermally grown ZnO nanowires
C Opoku, AS Dahiya, F Cayrel, G Poulin-Vittrant, D Alquier, N Camara
RSC advances 5 (86), 69925-69931, 2015
462015
The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
C Bonafos, A Claverie, D Alquier, C Bergaud, A Martinez, L Laanab, ...
Applied physics letters 71 (3), 365-367, 1997
441997
Single-crystalline ZnO sheet source-gated transistors
AS Dahiya, C Opoku, RA Sporea, B Sarvankumar, G Poulin-Vittrant, ...
Scientific Reports 6 (1), 19232, 2016
422016
Fabrication and characterization of ZnO nanowire-based piezoelectric nanogenerators for low frequency mechanical energy harvesting
G Poulin-Vittrant, C Oshman, C Opoku, AS Dahiya, N Camara, D Alquier, ...
Physics Procedia 70, 909-913, 2015
412015
Elastic energy of strained islands: Contribution of the substrate as a function of the island aspect ratio and inter-island distance
A Ponchet, D Lacombe, L Durand, D Alquier, JM Cardonna
Applied physics letters 72 (23), 2984-2986, 1998
391998
Emerging SiC applications beyond power electronic devices
F La Via, D Alquier, F Giannazzo, T Kimoto, P Neudeck, H Ou, ...
Micromachines 14 (6), 1200, 2023
372023
Deposition time and annealing effects of ZnO seed layer on enhancing vertical alignment of piezoelectric ZnO nanowires
T Slimani Tlemcani, C Justeau, K Nadaud, G Poulin-Vittrant, D Alquier
Chemosensors 7 (1), 7, 2019
372019
Stability evaluation of ZnO nanosheet based source-gated transistors
AS Dahiya, RA Sporea, G Poulin-Vittrant, D Alquier
Scientific Reports 9 (1), 2979, 2019
332019
Interactions between Dopants and End-of-Range Defects in Silicon
A Claverie, C Bonafos, A Martinez, D Alquier
Solid State Phenomena 47, 195-204, 1995
331995
Optimization of the fabrication of sealed capacitive transducers using surface micromachining
B Belgacem, D Alquier, P Muralt, J Baborowski, S Lucas, R Jerisian
Journal of Micromechanics and Microengineering 14 (2), 299, 2003
322003
Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects?
M Omri, C Bonafos, A Claverie, A Nejim, F Cristiano, D Alquier, A Martinez, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
321996
Porosity and thickness characterization of porous Si and oxidized porous Si layers–An ultraviolet–visible–mid infrared ellipsometry study
B Fodor, E Agocs, B Bardet, T Defforge, F Cayrel, D Alquier, M Fried, ...
microporous and mesoporous materials 227, 112-120, 2016
312016
Flexible organic/inorganic hybrid field-effect transistors with high performance and operational stability
AS Dahiya, C Opoku, G Poulin-Vittrant, N Camara, C Daumont, ...
ACS Applied Materials & Interfaces 9 (1), 573-584, 2017
302017
Recent progresses in GaN power rectifier
D Alquier, F Cayrel, O Menard, AE Bazin, A Yvon, E Collard
Japanese Journal of Applied Physics 51 (1S), 01AG08, 2012
282012
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