Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling S Tongay, H Sahin, C Ko, A Luce, W Fan, K Liu, J Zhou, YS Huang, ...
Nature communications 5 (1), 3252, 2014
1118 2014 Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors E Liu, Y Fu, Y Wang, Y Feng, H Liu, X Wan, W Zhou, B Wang, L Shao, ...
Nature communications 6 (1), 1-7, 2015
645 2015 Single-Layer ReS2 : Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy YC Lin, HP Komsa, CH Yeh, T Bjorkman, ZY Liang, CH Ho, YS Huang, ...
ACS nano 9 (11), 11249-11257, 2015
451 2015 High-mobility InSe transistors: the role of surface oxides PH Ho, YR Chang, YC Chu, MK Li, CA Tsai, WH Wang, CH Ho, CW Chen, ...
ACS nano 11 (7), 7362-7370, 2017
231 2017 Formation and stability of point defects in monolayer rhenium disulfide S Horzum, D Çakır, J Suh, S Tongay, YS Huang, CH Ho, J Wu, H Sahin, ...
Physical Review B 89 (15), 155433, 2014
191 2014 High mobilities in layered InSe transistors with indium‐encapsulation‐induced surface charge doping M Li, CY Lin, SH Yang, YM Chang, JK Chang, FS Yang, C Zhong, ...
Advanced Materials 30 (44), 1803690, 2018
151 2018 Disorder engineering and conductivity dome in ReS2 with electrolyte gating D Ovchinnikov, F Gargiulo, A Allain, DJ Pasquier, D Dumcenco, CH Ho, ...
Nature communications 7 (1), 12391, 2016
134 2016 The study of optical band edge property of bismuth oxide nanowires α-Bi2 O3 CH Ho, CH Chan, YS Huang, LC Tien, LC Chao
Optics express 21 (10), 11965-11972, 2013
133 2013 Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features FS Yang, M Li, MP Lee, IY Ho, JY Chen, H Ling, Y Li, JK Chang, SH Yang, ...
Nature Communications 11 (1), 2972, 2020
130 2020 Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons and metal-semiconductor Zn/ZnO nanospheres JH Lin, RA Patil, RS Devan, ZA Liu, YP Wang, CH Ho, Y Liou, YR Ma
Scientific reports 4 (1), 6967, 2014
117 2014 Absorption-edge anisotropy in and layered semiconductors CH Ho, YS Huang, KK Tiong, PC Liao
Physical Review B 58 (24), 16130, 1998
115 1998 Optical properties of the interband transitions of layered gallium sulfide CH Ho, SL Lin
Journal of applied physics 100 (8), 2006
113 2006 Surface Oxide Effect on Optical Sensing and Photoelectric Conversion of α-In2 Se3 Hexagonal Microplates CH Ho, CH Lin, YP Wang, YC Chen, SH Chen, YS Huang
ACS applied materials & interfaces 5 (6), 2269-2277, 2013
101 2013 Gallium Oxide: Technology, Devices and Applications S Pearton, F Ren, M Mastro
Elsevier, 2018
99 2018 Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1– x ) Se2 x Alloys with Distorted 1T Structure W Wen, Y Zhu, X Liu, HP Hsu, Z Fei, Y Chen, X Wang, M Zhang, KH Lin, ...
small 13 (12), 1603788, 2017
90 2017 Bending photoluminescence and surface photovoltaic effect on multilayer InSe 2D microplate crystals CH Ho, YJ Chu
Advanced Optical Materials 3 (12), 1750-1758, 2015
88 2015 In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals CH Ho, YS Huang, KK Tiong
Journal of alloys and compounds 317, 222-226, 2001
88 2001 Temperature dependence of energies and broadening parameters of the band-edge excitons of single crystals CH Ho, CS Wu, YS Huang, PC Liao, KK Tiong
Journal of Physics: Condensed Matter 10 (41), 9317, 1998
81 1998 Crystal structure and band-edge transitions of ReS2− xSex layered compounds CH Ho, YS Huang, PC Liao, KK Tiong
Journal of Physics and Chemistry of Solids 60 (11), 1797-1804, 1999
80 1999 Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn (SxSe1− x) 4 solid solutions S Levcenco, D Dumcenco, YP Wang, YS Huang, CH Ho, E Arushanov, ...
Optical Materials 34 (8), 1362-1365, 2012
79 2012