| Epitaxial graphene on cubic SiC (111)/Si (111) substrate A Ouerghi, A Kahouli, D Lucot, M Portail, L Travers, J Gierak, J Penuelas, ... Applied physics letters 96 (19), 2010 | 136 | 2010 |
| Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide F Lafont, R Ribeiro-Palau, D Kazazis, A Michon, O Couturaud, C Consejo, ... Nature Communications 6 (1), 6806, 2015 | 110 | 2015 |
| Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A Michon, S Vézian, A Ouerghi, M Zielinski, T Chassagne, M Portail Applied Physics Letters 97 (17), 2010 | 98 | 2010 |
| Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates. M Portail, M Zielinski, T Chassagne, S Roy, M Nemoz Journal of Applied Physics 105 (8), 2009 | 78 | 2009 |
| Evidence of electrical activity of extended defects in 3C–SiC grown on Si X Song, JF Michaud, F Cayrel, M Zielinski, M Portail, T Chassagne, ... Applied Physics Letters 96 (14), 2010 | 73 | 2010 |
| Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions M Zielinski, S Ndiaye, T Chassagne, S Juillaguet, R Lewandowska, ... Physica status solidi (a) 204 (4), 981-986, 2007 | 68 | 2007 |
| A comprehensive study of SiC growth processes in a VPE reactor T Chassagne, G Ferro, D Chaussende, F Cauwet, Y Monteil, J Bouix Thin Solid Films 402 (1-2), 83-89, 2002 | 68 | 2002 |
| Effects of pressure, temperature, and hydrogen during graphene growth on SiC (0001) using propane-hydrogen chemical vapor deposition A Michon, S Vézian, E Roudon, D Lefebvre, M Zielinski, T Chassagne, ... Journal of Applied Physics 113 (20), 2013 | 61 | 2013 |
| AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si (1 1 1) Y Cordier, M Portail, S Chenot, O Tottereau, M Zielinski, T Chassagne Journal of crystal growth 310 (20), 4417-4423, 2008 | 61 | 2008 |
| Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor M Zielinski, M Portail, T Chassagne, S Juillaguet, H Peyre Journal of Crystal Growth 310 (13), 3174-3182, 2008 | 56 | 2008 |
| Stress relaxation during the growth of 3C-SiC∕ Si thin films M Zielinski, A Leycuras, S Ndiaye, T Chassagne Applied physics letters 89 (13), 2006 | 53 | 2006 |
| Strain Tailoring in 3C‐SiC Heteroepitaxial Layers Grown on Si (100) G Ferro, T Chassagne, A Leycuras, F Cauwet, Y Monteil Chemical Vapor Deposition 12 (8‐9), 483-488, 2006 | 50 | 2006 |
| Structural properties of undoped and doped cubic GaN grown on SiC (001) E Martínez-Guerrero, E Bellet-Amalric, L Martinet, G Feuillet, B Daudin, ... Journal of applied physics 91 (8), 4983-4987, 2002 | 49 | 2002 |
| Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC M Portail, A Michon, S Vézian, D Lefebvre, S Chenot, E Roudon, ... Journal of crystal growth 349 (1), 27-35, 2012 | 43 | 2012 |
| Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal" hot-walls" T Chassagne, A Leycuras, C Balloud, P Arcade, H Peyre, S Juillaguet Materials Science Forum 457, 273-276, 2004 | 41 | 2004 |
| Fabrication of monocrystalline 3C–SiC resonators for MHz frequency sensors applications M Placidi, P Godignon, N Mestres, G Abadal, G Ferro, A Leycuras, ... Sensors and Actuators B: Chemical 133 (1), 276-280, 2008 | 36 | 2008 |
| Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxy M Zielinski, M Portail, S Roy, T Chassagne, C Moisson, S Kret, Y Cordier Materials Science and Engineering: B 165 (1-2), 9-14, 2009 | 34 | 2009 |
| Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions S Roy, M Portail, T Chassagne, JM Chauveau, P Vennéguès, M Zielinski Applied Physics Letters 95 (8), 2009 | 32 | 2009 |
| Study of surface defects on 3C–SiC films grown on Si (1 1 1) by CVD MJ Hernandez, G Ferro, T Chassagne, J Dazord, Y Monteil Journal of crystal growth 253 (1-4), 95-101, 2003 | 32 | 2003 |
| Electrical transport properties of p‐type 4H‐SiC S Contreras, L Konczewicz, R Arvinte, H Peyre, T Chassagne, M Zielinski, ... physica status solidi (a) 214 (4), 1600679, 2017 | 31 | 2017 |
