| Transport Properties of a MoS2/WSe2 Heterojunction Transistor and its Potential for Application A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios Nano Letters, 2016 | 554 | 2016 |
| MoS2 Field-Effect Transistor with Sub-10 nm Channel Length A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ... Nano letters 16 (12), 7798-7806, 2016 | 506 | 2016 |
| Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2 L Zhou, K Xu, A Zubair, A Liao, W Fang, F Ouyang, YH Lee, K Ueno, ... Journal of the American Chemical Society, 2015 | 385 | 2015 |
| Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting X Zhang, J Grajal, JL Vazquez-Roy, U Radhakrishna, X Wang, W Chern, ... Nature 566 (7744), 368-372, 2019 | 374 | 2019 |
| High-performance WSe2 complementary metal oxide semiconductor technology and integrated circuits L Yu, A Zubair, EJG Santos, X Zhang, Y Lin, Y Zhang, T Palacios Nano Letters, 2015 | 261 | 2015 |
| Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ... Nano letters 16 (10), 6349-6356, 2016 | 185 | 2016 |
| Synthesis of High‐Quality Large‐Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition L Zhou, A Zubair, Z Wang, X Zhang, F Ouyang, K Xu, W Fang, K Ueno, ... Advanced materials 28 (43), 9526-9531, 2016 | 170 | 2016 |
| Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ... IEEE Electron Device Letters 40 (1), 75-78, 2019 | 163 | 2019 |
| Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack A Nourbakhsh, A Zubair, S Joglekar, M Dresselhaus, T Palacios Nanoscale, 2017 | 160 | 2017 |
| A rational strategy for graphene transfer on substrates with rough features JY Hong, YC Shin, A Zubair, Y Mao, T Palacios, MS Dresselhaus, SH Kim, ... Advanced Materials, 2016 | 116 | 2016 |
| GaN FinFETs and Trigate Devices for Power and RF Applications: Review and Perspective Y Zhang, A Zubair, Z Liu, M Xiao, J Perozek, Y Ma, T Palacios Semiconductor Science and Technology, 2021 | 115 | 2021 |
| Hot electron transistor with van der Waals base-collector heterojunction and high performance GaN emitter A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song, D Jena, J Kong, ... Nano Letters, 2017 | 85 | 2017 |
| Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe2 L Zhou, K Xu, A Zubair, X Zhang, F Ouyang, T Palacios, MS Dresselhaus, ... Advanced Functional Materials 27 (3), 2017 | 80 | 2017 |
| Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ... Electron Devices Meeting (IEDM), 2016 IEEE International, 10.2. 1-10.2. 4, 2016 | 76 | 2016 |
| Negative Capacitance Carbon Nanotube FETs T Srimani, G Hills, MD Bishop, U Radhakrishna, A Zubair, RS Park, ... IEEE Electron Device Letters 39 (2), 304-307, 2018 | 52 | 2018 |
| Impact of Al2O3 Passivation on the Photovoltaic Performance of Vertical WSe2 Schottky Junction Solar Cells E McVay, A Zubair, Y Lin, A Nourbakhsh, T Palacios ACS Applied Materials & Interfaces 12 (52), 57987-57995, 2020 | 48 | 2020 |
| Antiferroelectric negative capacitance from a structural phase transition in zirconia M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ... Nature communications 13 (1), 1228, 2022 | 44 | 2022 |
| Enhancement-Mode Single-layer CVD MoS2 FET Technology for Digital Electronics L Yu, D El-Damak, S Ha, X Ling, Y Lin, JK A. Zubair, Y.-H. Lee, ... IEEE International Electron Devices Meeting, 2015 | 34 | 2015 |
| 15-nm channel length MoS2 FETs with single- and double-gate structures A Nourbakhsh, A Zubair, S Huang, X Ling, MS Dresselhaus, J Kong, ... 2015 Symposium on VLSI Technology (VLSI Technology), T28-T29, 2015 | 33 | 2015 |
| Scaled submicron field-plated enhancement mode high-K gallium nitride transistors on 300mm Si (111) wafer with power FoM (R ON xQ GG) of 3.1 mohm-nC at 40V and f T/f MAX of 130 … HW Then, M Radosavljevic, P Koirala, M Beumer, S Bader, A Zubair, ... 2022 International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2022 | 25 | 2022 |
Tomás PalaciosMITΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα mit.edu