Παρακολούθηση
Byung Gook Park
Byung Gook Park
Professor of Electrical Engineering, Seoul National University
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα snu.ac.kr
Τίτλος
Παρατίθεται από
Παρατίθεται από
Έτος
Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec
WY Choi, BG Park, JD Lee, TJK Liu
IEEE Electron Device Letters 28 (8), 743-745, 2007
21232007
Three-dimensional NAND flash architecture design based on single-crystalline stacked array
Y Kim, JG Yun, SH Park, W Kim, JY Seo, M Kang, KC Ryoo, JH Oh, ...
IEEE Transactions on Electron Devices 59 (1), 35-45, 2011
3482011
Demonstration of L-shaped tunnel field-effect transistors
SW Kim, JH Kim, TJK Liu, WY Choi, BG Park
IEEE transactions on electron devices 63 (4), 1774-1778, 2015
3182015
Single-crystalline Si stacked array (STAR) NAND flash memory
JG Yun, G Kim, JE Lee, Y Kim, WB Shim, JH Lee, H Shin, JD Lee, ...
IEEE Transactions on Electron Devices 58 (4), 1006-1014, 2011
2782011
Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
2502017
RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs
S Cho, KR Kim, BG Park, IM Kang
IEEE Transactions on Electron Devices 58 (5), 1388-1396, 2011
2142011
Semiconductor devices and methods of driving the same
JH Oh, KC Ryoo, B Park, K Oh, IG Baek
US Patent 8,472,237, 2013
1862013
Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor
KH Cho, BH Choi, SH Son, SW Hwang, D Ahn, BG Park, B Naser, JF Lin, ...
Applied Physics Letters 86 (4), 2005
1752005
Design optimization of gate-all-around (GAA) MOSFETs
JY Song, WY Choi, JH Park, JD Lee, BG Park
IEEE Transactions on Nanotechnology 5 (3), 186-191, 2006
1712006
Design guideline of Si-based L-shaped tunneling field-effect transistors
SW Kim, WY Choi, MC Sun, HW Kim, BG Park
Japanese Journal of Applied Physics 51 (6S), 06FE09, 2012
1522012
The analysis of dark signals in the CMOS APS imagers from the characterization of test structures
HI Kwon, IM Kang, BG Park, JD Lee, SS Park
IEEE Transactions on Electron Devices 51 (2), 178-184, 2004
1472004
Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devices
M Sun, B Park
US Patent 8,481,392, 2013
1352013
Multilevel vertical-channel SONOS nonvolatile memory on SOI
YK Lee, JS Sim, SK Sung, CJ Lee, TH Kim, JD Lee, BG Park, DH Lee, ...
IEEE Electron Device Letters 23 (11), 664-666, 2002
1292002
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
1172019
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
S Kim, S Jung, MH Kim, S Cho, BG Park
Applied Physics Letters 106 (21), 2015
1142015
Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly (vinyl alcohol) gate insulator
CA Lee, DW Park, SH Jin, IH Park, JD Lee, BG Park
Applied Physics Letters 88 (25), 2006
1112006
Double-gate TFET with vertical channel sandwiched by lightly doped Si
JH Kim, S Kim, BG Park
IEEE Transactions on Electron Devices 66 (4), 1656-1661, 2019
1052019
Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors
S Cho, JS Lee, KR Kim, BG Park, JS Harris, IM Kang
IEEE transactions on electron devices 58 (12), 4164-4171, 2011
1042011
Scaling effect on silicon nitride memristor with highly doped Si substrate
S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...
Small 14 (19), 1704062, 2018
1032018
Silicon-based floating-body synaptic transistor with frequency-dependent short-and long-term memories
H Kim, J Park, MW Kwon, JH Lee, BG Park
IEEE Electron Device Letters 37 (3), 249-252, 2016
962016
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