Παρακολούθηση
Byungha Shin
Byungha Shin
KAIST
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα kaist.ac.kr - Αρχική σελίδα
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Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber
B Shin, O Gunawan, Y Zhu, NA Bojarczuk, SJ Chey, S Guha
Progress in Photovoltaics: Research and Applications 21 (1), 72-76, 2013
14162013
Thermally evaporated Cu2ZnSnS4 solar cells
K Wang, O Gunawan, T Todorov, B Shin, SJ Chey, NA Bojarczuk, D Mitzi, ...
Applied Physics Letters 97 (14), 2010
8512010
Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites
D Kim, HJ Jung, IJ Park, BW Larson, SP Dunfield, C Xiao, J Kim, J Tong, ...
Science 368 (6487), 155-160, 2020
5502020
High efficiency Cu 2 ZnSn (S, Se) 4 solar cells by applying a double In 2 S 3/CdS emitter
J Kim, H Hiroi, TK Todorov, O Gunawan, M Kuwahara, T Gokmen, D Nair, ...
Adv. Mater 26 (44), 7427-7431, 2014
5072014
Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier
B Shin, Y Zhu, NA Bojarczuk, S Jay Chey, S Guha
Applied Physics Letters 101 (5), 2012
4142012
Band alignment at the Cu2ZnSn (SxSe1− x) 4/CdS interface
R Haight, A Barkhouse, O Gunawan, B Shin, M Copel, M Hopstaken, ...
Applied Physics Letters 98 (25), 2011
3362011
Building energy performance evaluation of building integrated photovoltaic (BIPV) window with semi-transparent solar cells
YT Chae, J Kim, H Park, B Shin
Applied Energy 129, 217-227, 2014
3142014
An ultrahigh‐performance photodetector based on a perovskite–transition‐metal‐dichalcogenide hybrid structure
DH Kang, SR Pae, J Shim, G Yoo, J Jeon, JW Leem, JS Yu, S Lee, B Shin, ...
Advanced Materials 28 (35), 7799-7806, 2016
2912016
The Role of Sodium as a Surfactant and Suppressor of Non‐Radiative Recombination at Internal Surfaces in Cu2ZnSnS4
T Gershon, B Shin, N Bojarczuk, M Hopstaken, DB Mitzi, S Guha
Advanced Energy Materials 5 (2), 1400849, 2015
2642015
Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells
K Wang, B Shin, KB Reuter, T Todorov, DB Mitzi, S Guha
Applied Physics Letters 98 (5), 2011
2582011
Electronic properties of the Cu2ZnSn (Se, S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods
O Gunawan, T Gokmen, CW Warren, JD Cohen, TK Todorov, ...
Applied Physics Letters 100 (25), 2012
2392012
A Distributed Model for Border Traps in MOS Devices
Y Yuan, L Wang, B Yu, B Shin, J Ahn, PC McIntyre, PM Asbeck, ...
IEEE Electron Device Letters 32 (4), 485-487, 2011
2192011
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre
Applied physics letters 96 (15), 2010
2052010
Amorphizing noble metal chalcogenide catalysts at the single-layer limit towards hydrogen production
Y He, L Liu, C Zhu, S Guo, P Golani, B Koo, P Tang, Z Zhao, M Xu, C Zhu, ...
Nature Catalysis 5 (3), 212-221, 2022
1852022
Laser crystallization of organic–inorganic hybrid perovskite solar cells
T Jeon, HM Jin, SH Lee, JM Lee, HI Park, MK Kim, KJ Lee, B Shin, ...
ACS nano 10 (8), 7907-7914, 2016
1472016
On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact
B Shin, NA Bojarczuk, S Guha
Applied Physics Letters 102 (9), 2013
1452013
Continuous 3D Titanium Nitride Nanoshell Structure for Solar‐Driven Unbiased Biocatalytic CO2 Reduction
SK Kuk, Y Ham, K Gopinath, P Boonmongkolras, Y Lee, YW Lee, ...
Advanced Energy Materials 9 (25), 1900029, 2019
1272019
Stability of halide perovskite solar cell devices: in situ observation of oxygen diffusion under biasing
HJ Jung, D Kim, S Kim, J Park, VP Dravid, B Shin
Advanced Materials 30 (39), 1802769, 2018
1252018
Effects of a SnO 2 hole blocking layer in a BiVO 4-based photoanode on photoelectrocatalytic water oxidation
S Byun, B Kim, S Jeon, B Shin
Journal of Materials Chemistry A 5 (15), 6905-6913, 2017
1192017
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
1132009
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