Παρακολούθηση
Luis A. Marqués
Luis A. Marqués
University of Valladolid
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα ele.uva.es
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Παρατίθεται από
Παρατίθεται από
Έτος
Ion-beam-induced amorphization and recrystallization in silicon
L Pelaz, LA Marqués, J Barbolla
Journal of applied physics 96 (11), 5947-5976, 2004
4732004
Ion-beam processing of silicon at keV energies: A molecular-dynamics study
MJ Caturla, TD de La Rubia, LA Marques, GH Gilmer
Physical Review B 54 (23), 16683, 1996
2951996
Stability of defects in crystalline silicon and their role in amorphization
LA Marqués, L Pelaz, J Hernández, J Barbolla, GH Gilmer
Physical Review B 64 (4), 045214, 2001
1632001
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial
LA Marqués, L Pelaz, P Castrillo, J Barbolla
Physical Review B—Condensed Matter and Materials Physics 71 (8), 085204, 2005
1002005
Atomistic modeling of amorphization and recrystallization in silicon
L Pelaz, LA Marqués, M Aboy, J Barbolla, GH Gilmer
Applied physics letters 82 (13), 2038-2040, 2003
902003
Microscopic description of the irradiation-induced amorphization in silicon
LA Marqués, L Pelaz, M Aboy, L Enríquez, J Barbolla
Physical review letters 91 (13), 135504, 2003
862003
Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study
LA Marqués, MJ Caturla, T Díaz de la Rubia, GH Gilmer
Journal of applied physics 80 (11), 6160-6169, 1996
631996
Modeling of damage generation mechanisms in silicon at energies below the displacement threshold
I Santos, LA Marqués, L Pelaz
Physical Review B—Condensed Matter and Materials Physics 74 (17), 174115, 2006
582006
Front-end process modeling in silicon
L Pelaz, LA Marqués, M Aboy, P López, I Santos
The European Physical Journal B 72, 323-359, 2009
492009
Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
M Aboy, L Pelaz, LA Marqués, J Barbolla, A Mokhberi, Y Takamura, ...
Applied physics letters 83 (20), 4166-4168, 2003
452003
Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy
Journal of applied physics 97 (10), 2005
432005
The laser annealing induced phase transition in silicon: a molecular dynamics study
LA Marqués, L Pelaz, M Aboy, J Barbolla
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
392004
Characterization of octadecaborane implantation into Si using molecular dynamics
LA Marqués, L Pelaz, I Santos, VC Venezia
Physical Review B—Condensed Matter and Materials Physics 74 (20), 201201, 2006
362006
Atomistic analysis of defect evolution and transient enhanced diffusion in silicon
M Aboy, L Pelaz, LA Marqués, L Enriquez, J Barbolla
Journal of applied physics 94 (2), 1013-1018, 2003
332003
An improved molecular dynamics scheme for ion bombardment simulations
LA Marques, JE Rubio, M Jaraiz, L Enriquez, J Barbolla
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
331995
Molecular dynamics simulations of damage production by thermal spikes in Ge
P López, L Pelaz, I Santos, LA Marqués, M Aboy
Journal of Applied Physics 111 (3), 2012
322012
The curious case of thin-body Ge crystallization
R Duffy, M Shayesteh, B McCarthy, A Blake, M White, J Scully, R Yu, ...
Applied Physics Letters 99 (13), 2011
322011
Improved atomistic damage generation model for binary collision simulations
I Santos, LA Marqués, L Pelaz, P López
Journal of Applied Physics 105 (8), 2009
322009
Modeling of defects, dopant diffusion and clustering in silicon
M Aboy, I Santos, L Pelaz, LA Marqués, P López
Journal of Computational Electronics 13, 40-58, 2014
302014
Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects
LA Marqués, L Pelaz, P López, I Santos, M Aboy
Physical Review B—Condensed Matter and Materials Physics 76 (15), 153201, 2007
282007
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