Modified Deal Grove model for the thermal oxidation of silicon carbide Y Song, S Dhar, LC Feldman, G Chung, JR Williams
Journal of Applied Physics 95 (9), 4953-4957, 2004
324 2004 Silicon carbide: A unique platform for metal-oxide-semiconductor physics G Liu, BR Tuttle, S Dhar
Applied Physics Reviews 2 (2), 2015
320 2015 Bonding at the S Wang, S Dhar, S Wang, AC Ahyi, A Franceschetti, JR Williams, ...
Physical review letters 98 (2), 026101, 2007
237 2007 Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC J Rozen, S Dhar, ME Zvanut, JR Williams, LC Feldman
Journal of Applied Physics 105 (12), 2009
219 2009 Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes AM Armstrong, MH Crawford, A Jayawardena, A Ahyi, S Dhar
Journal of Applied Physics 119 (10), 2016
199 2016 Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors S Dhar, S Haney, L Cheng, SR Ryu, AK Agarwal, LC Yu, KP Cheung
Journal of Applied Physics 108 (5), 2010
150 2010 Enhanced Inversion Mobility on 4H-SiC G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ...
IEEE Electron Device Letters 34 (2), 181-183, 2013
138 2013 Chemical properties of oxidized silicon carbide surfaces upon etching in hydrofluoric acid S Dhar, O Seitz, MD Halls, S Choi, YJ Chabal, LC Feldman
Journal of the American Chemical Society 131 (46), 16808-16813, 2009
136 2009 Interface passivation for silicon dioxide layers on silicon carbide S Dhar, S Wang, JR Williams, ST Pantelides, LC Feldman
MRS bulletin 30 (4), 288-292, 2005
113 2005 Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the S Dhar, YW Song, LC Feldman, T Isaacs-Smith, CC Tin, JR Williams, ...
Applied physics letters 84 (9), 1498-1500, 2004
109 2004 Delivery of lethal dsRNAs in insect diets by branched amphiphilic peptide capsules LA Avila, R Chandrasekar, KE Wilkinson, J Balthazor, M Heerman, ...
Journal of controlled release 273, 139-146, 2018
104 2018 Interface trap passivation for SiO2∕(0001) C-terminated 4H-SiC S Dhar, LC Feldman, S Wang, T Isaacs-Smith, JR Williams
Journal of Applied Physics 98 (1), 2005
100 2005 High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, M Park, Y Xu, ...
IEEE Electron Device Letters 34 (2), 175-177, 2013
99 2013 High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers DJ Lichtenwalner, L Cheng, S Dhar, A Agarwal, JW Palmour
Applied Physics Letters 105 (18), 2014
96 2014 Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface J Rozen, S Dhar, SK Dixit, VV Afanas’ev, FO Roberts, HL Dang, S Wang, ...
Journal of applied physics 103 (12), 2008
96 2008 Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
91 2006 Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC XD Chen, S Dhar, T Isaacs-Smith, JR Williams, LC Feldman, PM Mooney
Journal of Applied Physics 103 (3), 2008
78 2008 High channel mobility 4H-SiC MOSFETs by antimony counter-doping A Modic, G Liu, AC Ahyi, Y Zhou, P Xu, MC Hamilton, JR Williams, ...
IEEE Electron Device Letters 35 (9), 894-896, 2014
77 2014 Pressure dependence of SiO2 growth kinetics and electrical properties on SiC EA Ray, J Rozen, S Dhar, LC Feldman, JR Williams
Journal of Applied Physics 103 (2), 2008
72 2008 High-resolution elemental profiles of the silicon dioxide∕ 4H-silicon carbide interface KC Chang, Y Cao, LM Porter, J Bentley, S Dhar, LC Feldman, JR Williams
Journal of applied physics 97 (10), 2005
70 2005 