Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors R Quhe, Q Li, Q Zhang, Y Wang, H Zhang, J Li, X Zhang, D Chen, K Liu, ... Physical Review Applied 10 (2), 024022, 2018 | 172 | 2018 |
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ... Reports on Progress in Physics 84 (5), 056501, 2021 | 141 | 2021 |
Many-body effect and device performance limit of monolayer InSe Y Wang, R Fei, R Quhe, J Li, H Zhang, X Zhang, B Shi, L Xiao, Z Song, ... ACS applied materials & interfaces 10 (27), 23344-23352, 2018 | 118 | 2018 |
Schottky barriers in bilayer phosphorene transistors Y Pan, Y Dan, Y Wang, M Ye, H Zhang, R Quhe, X Zhang, J Li, W Guo, ... ACS applied materials & interfaces 9 (14), 12694-12705, 2017 | 103 | 2017 |
Monolayer tellurene–metal contacts J Yan, X Zhang, Y Pan, J Li, B Shi, S Liu, J Yang, Z Song, H Zhang, M Ye, ... Journal of Materials Chemistry C 6 (23), 6153-6163, 2018 | 98 | 2018 |
Crepe cake structured layered double hydroxide/sulfur/graphene as a positive electrode material for Li–S batteries S Liu, X Zhang, S Wu, X Chen, X Yang, W Yue, J Lu, W Zhou ACS nano 14 (7), 8220-8231, 2020 | 90 | 2020 |
Sub 10 nm Bilayer Bi2O2Se Transistors J Yang, R Quhe, Q Li, S Liu, L Xu, Y Pan, H Zhang, X Zhang, J Li, J Yan, ... Advanced Electronic Materials 5 (3), 1800720, 2019 | 86 | 2019 |
Monolayer bismuthene-metal contacts: a theoretical study Y Guo, F Pan, M Ye, X Sun, Y Wang, J Li, X Zhang, H Zhang, Y Pan, ... ACS applied materials & interfaces 9 (27), 23128-23140, 2017 | 85 | 2017 |
Electrical contacts in monolayer arsenene devices Y Wang, M Ye, M Weng, J Li, X Zhang, H Zhang, Y Guo, Y Pan, L Xiao, ... ACS Applied Materials & Interfaces 9 (34), 29273-29284, 2017 | 82 | 2017 |
Excellent device performance of sub‐5‐nm monolayer tellurene transistors J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ... Advanced Electronic Materials 5 (7), 1900226, 2019 | 81 | 2019 |
Three-layer phosphorene-metal interfaces X Zhang, Y Pan, M Ye, R Quhe, Y Wang, Y Guo, H Zhang, Y Dan, Z Song, ... Nano Research 11, 707-721, 2018 | 80 | 2018 |
Electrical contacts in monolayer blue phosphorene devices J Li, X Sun, C Xu, X Zhang, Y Pan, M Ye, Z Song, R Quhe, Y Wang, ... Nano Research 11, 1834-1849, 2018 | 68 | 2018 |
Gate-tunable interfacial properties of in-plane ML MX 2 1T′–2H heterojunctions S Liu, J Li, B Shi, X Zhang, Y Pan, M Ye, R Quhe, Y Wang, H Zhang, J Yan, ... Journal of Materials Chemistry C 6 (21), 5651-5661, 2018 | 67 | 2018 |
High-performance sub-10-nm monolayer black phosphorene tunneling transistors H Li, J Tie, J Li, M Ye, H Zhang, X Zhang, Y Pan, Y Wang, R Quhe, F Pan, ... Nano Research 11, 2658-2668, 2018 | 66 | 2018 |
Holey graphite: A promising anode material with ultrahigh storage for lithium-ion battery C Yang, X Zhang, J Li, J Ma, L Xu, J Yang, S Liu, S Fang, Y Li, X Sun, ... Electrochimica Acta 346, 136244, 2020 | 63 | 2020 |
Schottky Contact in Monolayer WS2 Field‐Effect Transistors H Tang, B Shi, Y Pan, J Li, X Zhang, J Yan, S Liu, J Yang, L Xu, J Yang, ... Advanced Theory and Simulations 2 (5), 1900001, 2019 | 60 | 2019 |
Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors Y Pan, J Gu, H Tang, X Zhang, J Li, B Shi, J Yang, H Zhang, J Yan, S Liu, ... ACS Applied Nano Materials 2 (8), 4717-4726, 2019 | 44 | 2019 |
Imprinting ferromagnetism and superconductivity in single atomic layers of molecular superlattices Z Li, X Zhang, X Zhao, J Li, TS Herng, H Xu, F Lin, P Lyu, X Peng, W Yu, ... Advanced Materials 32 (25), 1907645, 2020 | 43 | 2020 |
Monolayer GaS with high ion mobility and capacity as a promising anode battery material Z Xiuying, Y Chen, P Yuanyuan, W Mouyi, X Linqiang, L Shiqi, Y Jie, ... Journal of Materials Chemistry A, 2019 | 38 | 2019 |
n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors B Shi, Y Wang, J Li, X Zhang, J Yan, S Liu, J Yang, Y Pan, H Zhang, ... Physical Chemistry Chemical Physics 20 (38), 24641-24651, 2018 | 35 | 2018 |