Άρθρα με εντολές δημόσιας πρόσβασης - Alan SeabaughΜάθετε περισσότερα
Δεν είναι διαθέσιμο πουθενά: 7
Switching Dynamics of Ferroelectric Zr-Doped HfO2
C Alessandri, P Pandey, A Abusleme, A Seabaugh
IEEE Electron Device Letters 39 (11), 1780-1783, 2018
Εντολές: US National Science Foundation, US Department of Defense
Monolayer solid-state electrolyte for electric double layer gating of graphene field-effect transistors
K Xu, H Lu, EW Kinder, A Seabaugh, SK Fullerton-Shirey
ACS nano 11 (6), 5453-5464, 2017
Εντολές: US National Science Foundation, US Department of Defense
Alloy engineered nitride tunneling field-effect transistor: A solution for the challenge of heterojunction tfets
TA Ameen, H Ilatikhameneh, P Fay, A Seabaugh, R Rahman, G Klimeck
IEEE Transactions on Electron Devices 66 (1), 736-742, 2018
Εντολές: US National Science Foundation, US Department of Defense
Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition
MA Heidarlou, P Paletti, B Jariwala, JA Robinson, SK Fullerton-Shirey, ...
IEEE Transactions on Electron Devices 67 (4), 1839-1844, 2020
Εντολές: US Department of Defense
Electrical Properties of 6 nm to 19 nm Thick Polyethylene Oxide Capacitors for Ion/Electron Functional Devices
KA Gonzalez-Serrano, AC Seabaugh
Journal of Electronic Materials 50, 2956-2963, 2021
Εντολές: US Department of Defense
Electric double layer Esaki tunnel junction in a 40-nm-length, WSe2 channel grown by molecular beam epitaxy on Al203
P Paletti, A Seabaugh, R Yue, C Hinkle
2018 48th European Solid-State Device Research Conference (ESSDERC), 110-113, 2018
Εντολές: US Department of Defense
Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
J Zhang, C Alessandri, P Fay, A Seabaugh, T Ytterdal, E Memisevic, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
Εντολές: US Department of Defense, Swedish Research Council
Διαθέσιμο κάπου: 20
Electronics based on two-dimensional materials
G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ...
Nature nanotechnology 9 (10), 768-779, 2014
Εντολές: UK Natural Environment Research Council
Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine
JH Park, S Fathipour, I Kwak, K Sardashti, CF Ahles, SF Wolf, M Edmonds, ...
ACS nano 10 (7), 6888-6896, 2016
Εντολές: US National Science Foundation
Monte Carlo simulation of switching dynamics in polycrystalline ferroelectric capacitors
C Alessandri, P Pandey, A Abusleme, A Seabaugh
IEEE Transactions on Electron Devices 66 (8), 3527-3534, 2019
Εντολές: US National Science Foundation, US Department of Defense
Pulse dynamics of electric double layer formation on all-solid-state graphene field-effect transistors
K Xu, MM Islam, D Guzman, AC Seabaugh, A Strachan, ...
ACS Applied Materials & Interfaces 10 (49), 43166-43176, 2018
Εντολές: US National Science Foundation, US Department of Defense
Electric Double Layer Dynamics in Poly(ethylene oxide) LiClO4 on Graphene Transistors
HM Li, K Xu, B Bourdon, H Lu, YC Lin, JA Robinson, AC Seabaugh, ...
The Journal of Physical Chemistry C 121 (31), 16996-17004, 2017
Εντολές: US Department of Defense
Room-temperature graphene-nanoribbon tunneling field-effect transistors
WS Hwang, P Zhao, SG Kim, R Yan, G Klimeck, A Seabaugh, ...
npj 2D Materials and Applications 3 (1), 43, 2019
Εντολές: US National Science Foundation, US Department of Defense, Fundação para a …
Two-dimensional electric-double-layer Esaki diode
P Paletti, R Yue, C Hinkle, SK Fullerton-Shirey, A Seabaugh
npj 2D Materials and Applications 3 (1), 19, 2019
Εντολές: US Department of Defense, Fundação para a Ciência e a Tecnologia, Portugal
Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure
MR Müller, R Salazar, S Fathipour, H Xu, K Kallis, U Künzelmann, ...
Nanoscale Research Letters 11, 1-6, 2016
Εντολές: German Research Foundation
Hybrid phase-change—Tunnel FET (PC-TFET) switch with subthreshold swing< 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
EA Casu, WA Vitale, N Oliva, T Rosca, A Biswas, C Alper, A Krammer, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.3. 1-19.3. 4, 2016
Εντολές: Swiss National Science Foundation
Tunnel FET analog benchmarking and circuit design
H Lu, P Paletti, W Li, P Fay, T Ytterdal, A Seabaugh
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018
Εντολές: US Department of Defense
Energetics of metal ion adsorption on and diffusion through crown ethers: First principles study on two-dimensional electrolyte
WH Wang, C Gong, W Wang, F Kong, H Kim, SK Fullerton-Shirey, ...
Solid State Ionics 301, 176-181, 2017
Εντολές: US Department of Defense, National Natural Science Foundation of China
First-principles study of crown ether and crown ether-Li complex interactions with graphene
WH Wang, C Gong, W Wang, SK Fullerton-Shirey, A Seabaugh, K Cho
The Journal of Physical Chemistry C 119 (34), 20016-20022, 2015
Εντολές: National Natural Science Foundation of China
Gallium nitride tunneling field-effect transistors exploiting polarization fields
A Chaney, H Turski, K Nomoto, Z Hu, J Encomendero, S Rouvimov, ...
Applied Physics Letters 116 (7), 2020
Εντολές: US National Science Foundation, US Department of Defense
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