X-ray diffraction of III-nitrides MA Moram, ME Vickers
Reports on progress in physics 72 (3), 036502, 2009
1391 2009 Piezoelectric coefficients and spontaneous polarization of ScAlN MA Caro, S Zhang, T Riekkinen, M Ylilammi, MA Moram, ...
Journal of Physics: Condensed Matter 27 (24), 245901, 2015
401 2015 Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram
Journal of applied physics 114 (13), 2013
249 2013 Understanding x-ray diffraction of nonpolar gallium nitride films MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys
Journal of Applied Physics 105 (11), 2009
179 2009 On the origin of threading dislocations in GaN films MA Moram, CS Ghedia, DVS Rao, JS Barnard, Y Zhang, MJ Kappers, ...
Journal of Applied Physics 106 (7), 2009
156 2009 Elastic constants and critical thicknesses of ScGaN and ScAlN S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram
Journal of applied physics 114 (24), 2013
150 2013 ScGaN and ScAlN: emerging nitride materials MA Moram, S Zhang
Journal of Materials Chemistry A 2 (17), 6042-6050, 2014
147 2014 Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction MA Moram, ZH Barber, CJ Humphreys
Journal of applied physics 102 (2), 2007
131 2007 The effect of oxygen incorporation in sputtered scandium nitride films MA Moram, ZH Barber, CJ Humphreys
Thin Solid Films 516 (23), 8569-8572, 2008
90 2008 Dislocation reduction in gallium nitride films using scandium nitride interlayers MA Moram, Y Zhang, MJ Kappers, ZH Barber, CJ Humphreys
Applied Physics Letters 91 (15), 2007
88 2007 On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors M Råsander, MA Moram
The Journal of Chemical Physics 143 (14), 2015
81 2015 The effects of Si doping on dislocation movement and tensile stress in GaN films MA Moram, MJ Kappers, F Massabuau, RA Oliver, CJ Humphreys
Journal of Applied Physics 109 (7), 2011
76 2011 Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire CF Johnston, MJ Kappers, MA Moram, JL Hollander, CJ Humphreys
Journal of crystal growth 311 (12), 3295-3299, 2009
71 2009 Electron effective mass and mobility limits in degenerate perovskite stannate CA Niedermeier, S Rhode, K Ide, H Hiramatsu, H Hosono, T Kamiya, ...
Physical Review B 95 (16), 161202, 2017
70 2017 Segregation of In to dislocations in InGaN MK Horton, S Rhode, SL Sahonta, MJ Kappers, SJ Haigh, TJ Pennycook, ...
Nano letters 15 (2), 923-930, 2015
67 2015 Mg doping affects dislocation core structures in GaN SK Rhode, MK Horton, MJ Kappers, S Zhang, CJ Humphreys, RO Dusane, ...
Physical review letters 111 (2), 025502, 2013
67 2013 Defect reduction in (112¯ 2) semipolar GaN grown on m-plane sapphire using ScN interlayers CF Johnston, MA Moram, MJ Kappers, CJ Humphreys
Applied Physics Letters 94 (16), 2009
66 2009 Carbon nanotube (CNT) forest grown on diamond-like carbon (DLC) thin films significantly improves electrochemical sensitivity and selectivity towards dopamine S Sainio, T Palomäki, S Rhode, M Kauppila, O Pitkänen, T Selkälä, G Toth, ...
Sensors and Actuators B: Chemical 211, 177-186, 2015
65 2015 Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon MA Moram, ZH Barber, CJ Humphreys, TB Joyce, PR Chalker
Journal of applied physics 100 (2), 2006
63 2006 Band gap bowing in Nix Mg1−x O CA Niedermeier, M Råsander, S Rhode, V Kachkanov, B Zou, N Alford, ...
Scientific reports 6 (1), 31230, 2016
62 2016 
David HolecMontanuniversität Leoben, AustriaΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα unileoben.ac.at
