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John L Lyons
John L Lyons
Center for Computational Materials Science, US Naval Research Laboratory
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα nrl.navy.mil - Αρχική σελίδα
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Bright triplet excitons in caesium lead halide perovskites
MA Becker, R Vaxenburg, G Nedelcu, PC Sercel, A Shabaev, MJ Mehl, ...
Nature 553 (7687), 189-193, 2018
9672018
Carbon impurities and the yellow luminescence in GaN
JL Lyons, A Janotti, CG Van de Walle
Applied Physics Letters 97, 152108, 2010
7392010
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
JL Lyons, A Janotti, CG Van de Walle
Physical Review B 89 (3), 035204, 2014
4822014
Why nitrogen cannot lead to p-type conductivity in ZnO
JL Lyons, A Janotti, CG Van de Walle
Applied Physics Letters 95, 252105, 2009
4722009
Shallow versus deep nature of Mg acceptors in nitride semiconductors
J Lyons, A Janotti, C G Van de Walle
Physical Review Letters 108, 156403, 2012
3082012
Computationally predicted energies and properties of defects in GaN
JL Lyons, CG Van de Walle
NPJ Computational Materials 3 (1), 12, 2017
2922017
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO
A Alkauskas, JL Lyons, D Steiauf, CG Van de Walle
Physical review letters 109 (26), 267401, 2012
2662012
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster
ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019
2352019
A survey of acceptor dopants for β-Ga2O3
JL Lyons
Semiconductor science and technology 33 (5), 05LT02, 2018
2322018
Deep acceptors and their diffusion in Ga2O3
H Peelaers, JL Lyons, JB Varley, CG Van de Walle
APL Materials 7 (2), 2019
2262019
Hybrid functional calculations of centers in AlN and GaN
L Gordon, JL Lyons, A Janotti, CG Van de Walle
Physical Review B 89 (8), 085204, 2014
2132014
Exciton fine structure in perovskite nanocrystals
PC Sercel, JL Lyons, D Wickramaratne, R Vaxenburg, N Bernstein, ...
Nano letters 19 (6), 4068-4077, 2019
1912019
First‐principles theory of acceptors in nitride semiconductors
JL Lyons, A Alkauskas, A Janotti, CG Van de Walle
physica status solidi (b) 252 (5), 900-908, 2015
1472015
First-principles calculations of point defects for quantum technologies
CE Dreyer, A Alkauskas, JL Lyons, A Janotti, CG Van de Walle
Annual Review of Materials Research 48 (1), 1-26, 2018
1362018
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
A Alkauskas, CE Dreyer, JL Lyons, CG Van de Walle
Physical Review B 93 (20), 201304, 2016
1232016
Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices
M Choi, JL Lyons, A Janotti, CG Van de Walle
Applied Physics Letters 102 (14), 2013
1222013
The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2
JL Lyons, A Janotti, CG Van de Walle
Microelectronic Engineering, 2011
1192011
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
CE Dreyer, A Alkauskas, JL Lyons, JS Speck, CG Van de Walle
Applied Physics Letters 108 (14), 2016
1172016
First-principles characterization of native-defect-related optical transitions in ZnO
JL Lyons, JB Varley, D Steiauf, A Janotti, CG Van de Walle
Journal of Applied Physics 122 (3), 2017
1122017
Quasicubic model for metal halide perovskite nanocrystals
PC Sercel, JL Lyons, N Bernstein, AL Efros
The Journal of Chemical Physics 151 (23), 2019
982019
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