Stability analysis of FGM microgripper subjected to nonlinear electrostatic and temperature variation loadings R Jahanghiry, R Yahyazadeh, N Sharafkhani, VA Maleki
Science and Engineering of Composite Materials 23 (2), 199-207, 2016
30 2016 The effects of depletion layer on negative differential conductivity in AlGaN/GaN high electron mobility transistor R Yahyazadeh, A Asgari, M Kalafi
Physica E: Low-dimensional Systems and Nanostructures 33 (1), 77-82, 2006
23 2006 Numerical Modeling of Electronic and Electrical Characteristics of 0. 3 0. 7 Al Ga N/GaN Multiple Quantum Well Solar Cells R Yahyazadeh, Z Hashempour
JOURNAL OF OPTOELECTRONICAL NANOSTRUCTURES 5 (3), 81-102, 2020
15 2020 Numerical modeling of electronic and electrical characteristics of InGaN/GaN multiple quantum well solar cells R Yahyazadeh
Journal of Photonics for Energy 10 (4), 045504-045504, 2020
13 2020 Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors R Yahyazadeh
Journal of Interfaces, Thin films, and Low dimensional systems 2 (2), 183-194, 2019
9 2019 Effect of high temperature on the transconductance of AlGaN/AlN/GaN high electron mobility transistors (HEMT) R Yahyazadeh, Z Hashempour, G Abdollahi, B Baghdarghi
International Journal of Academic Research 5 (4), 78-86, 2013
8 2013 Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes R Yahyazadeh
Optical and Quantum Electronics 53, 1-18, 2021
7 2021 Effect of Hydrostatic Pressure on Optical Absorption Coefficient of InGaN/GaN of Multiple Quantum Well Solar Cells R Yahyazadeh, Z Hashempour
Journal of Optoelectronical Nanostructures 6 (2), 1-22, 2021
6 2021 Effect of hydrostatic pressure on optical absorption spectrum AlGaN/GaN multi-quantum wells R Yahyazadeh, Z Hashempour
Journal of Interfaces, Thin films, and Low dimensional systems 3 (2), 277-285, 2020
6 2020 Effect of hydrostatic pressure on the photocurrent density of R Yahyazadeh
Indian Journal of Physics 96 (10), 2815-2826, 2022
5 2022 Effect of hydrostatic pressure and temperature on quantum confinement of AlGaN/GaN HEMTs R Yahyazadeh, Z Hashempour
Journal of Science and Technology 13 (1), 1-11, 2021
5 2021 Numerical optimization for source-drain channel resistance of AlGaN/GaN HEMTS R Yahyazadeh, Z Hashempour
Journal of Science and technology 11 (1), 1-9, 2019
5 2019 ANALYTICAL-NUMERICAL MODEL FOR SHEET RESISTIVITY OF AlxGa1-xN/GaN HIGH-ELECTRON-MOBILITY TRANSISTORS R Yahyazadeh
Journal of Non-Oxide Glasses Vol 10 (2), 57-63, 2018
5 2018 Numerical analysis of oscillation frequency and amplitude effects on the AUV hydrodynamic derivatives in the pure heave motion HA Arani, M Mahdi
Underwater Engineering Journal 1, 63-73, 2016
4 2016 Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT) R Yahyazadeh, Z Hashempour
Journal of Materials Science and Engineering 5 (2), 155, 2011
3 2011 Non-radiative auger current in a InGaN/GaN multiple quantum well laser diode under hydrostatic pressure and temperature R Yahyazadeh, Z Hashempour
Journal of Optoelectronical Nanostructures 8 (2), 81-107, 2023
2 2023 Optical gain of AlGaN/GaN multiquantum well laser diode influenced by hydrostatic pressure R Yahyazadeh, Z Hashempour
Journal of Nanophotonics 15 (3), 036005-036005, 2021
2 2021 Numerical Performance of AlGaN/GaN High Electron Mobility Transistors under Hydrostatic Pressure and Temperature R Yahyazadeh, Z Hashempour
Journal of Science and technology 12 (1), 15-28, 2020
2 2020 NUMERICAL OPTIMIZATION FOR AlGaN/GaN HEMTs INCLUDING POLARIZATION COULOMB FIELD SCATTERING R Yahyazadeh, Z HASHEMPOUR
Journal of Non–Oxide Glasses Vol 11 (2), 19-26, 2019
2 2019 Effect of Temperature on the Total Mobility of AlGaN/GaN High Electron Mobility Transistors R Yahyazadeh
ECS Transactions 60 (1), 1051, 2014
2 2014 
zahra hashempourassistant professor of physicsΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα iaukhoy.ac.ir
