Παρακολούθηση
Wenke Weinreich
Wenke Weinreich
Fraunhofer IPMS - Center Nanoelectronic Technologies
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα ipms.fraunhofer.de
Τίτλος
Παρατίθεται από
Παρατίθεται από
Έτος
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
J Müller, TS Böscke, S Müller, E Yurchuk, P Polakowski, J Paul, D Martin, ...
2013 IEEE International Electron Devices Meeting, 10.8. 1-10.8. 4, 2013
5252013
Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications
P Polakowski, S Riedel, W Weinreich, M Rudolf, J Sundqvist, K Seidel, ...
2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014
1322014
Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
V Yanev, M Rommel, M Lemberger, S Petersen, B Amon, T Erlbacher, ...
Applied Physics Letters 92 (25), 2008
982008
Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping
W Weinreich, L Wilde, J Müller, J Sundqvist, E Erben, J Heitmann, ...
Journal of Vacuum Science & Technology A 31 (1), 2013
83*2013
Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo
G Jegert, A Kersch, W Weinreich, U Schröder, P Lugli
Applied Physics Letters 96 (6), 2010
822010
Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr (1− x) AlxO2 films
W Weinreich, R Reiche, M Lemberger, G Jegert, J Müller, L Wilde, ...
Microelectronic engineering 86 (7-9), 1826-1829, 2009
792009
Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2
C Mart, T Kämpfe, S Zybell, W Weinreich
Applied Physics Letters 112 (5), 2018
732018
Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes
W Weinreich, A Shariq, K Seidel, J Sundqvist, A Paskaleva, M Lemberger, ...
Journal of Vacuum Science & Technology B 31 (1), 2013
722013
Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films
C Mart, K Kühnel, T Kämpfe, S Zybell, W Weinreich
Applied Physics Letters 114 (10), 2019
652019
Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates
D Martin, M Grube, W Weinreich, J Müller, WM Weber, U Schröder, ...
Journal of Applied Physics 113 (19), 2013
602013
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition
J Müller, TS Böscke, U Schröder, M Reinicke, L Oberbeck, D Zhou, ...
Microelectronic engineering 86 (7-9), 1818-1821, 2009
552009
Doping concentration dependent piezoelectric behavior of Si: HfO2 thin-films
S Kirbach, M Lederer, S Eßlinger, C Mart, M Czernohorsky, W Weinreich, ...
Applied Physics Letters 118 (1), 2021
522021
High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates
K Kühnel, M Czernohorsky, C Mart, W Weinreich
Journal of Vacuum Science & Technology B 37 (2), 2019
472019
Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
D Zhou, U Schroeder, J Xu, J Heitmann, G Jegert, W Weinreich, M Kerber, ...
Journal of Applied Physics 108 (12), 2010
472010
Monte Carlo Simulation of Leakage Currents inCapacitors
G Jegert, A Kersch, W Weinreich, P Lugli
IEEE Transactions on Electron Devices 58 (2), 327-334, 2010
452010
Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness
G Jegert, A Kersch, W Weinreich, P Lugli
Journal of Applied Physics 109 (1), 2011
442011
Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles
C Mart, T Kämpfe, R Hoffmann, S Eßlinger, S Kirbach, K Kühnel, ...
Advanced Electronic Materials 6 (3), 1901015, 2020
402020
Spectroscopic analysis of ultra-thin TiN as a diffusion barrier for lithium-ion batteries by ToF-SIMS, XPS, and EELS
AM Kia, J Speulmanns, S Bönhardt, J Emara, K Kühnel, N Haufe, ...
Applied Surface Science 564, 150457, 2021
362021
IEEE International Electron Devices Meeting
J Müller, TS Böscke, S Müller, E Yurchuk, P Polakowski, J Paul, D Martin, ...
Washington, DC, USA 10, 1-10.8, 2013
322013
Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2) Thin Films on Area‐Enhanced Substrates
B Hanrahan, C Mart, T Kämpfe, M Czernohorsky, W Weinreich, A Smith
Energy Technology 7 (10), 1900515, 2019
312019
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