Παρακολούθηση
Byeongchan So
Byeongchan So
Lund University
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα ftf.lth.se
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Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
B So, J Kim, T Kwak, T Kim, J Lee, U Choi, O Nam
RSC advances 8 (62), 35528-35533, 2018
422018
Efficiency improvement of deep‐ultraviolet light emitting diodes with gradient electron blocking layers
B So, J Kim, E Shin, T Kwak, T Kim, O Nam
physica status solidi (a) 215 (10), 1700677, 2018
372018
Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition
T Kwak, J Lee, B So, U Choi, O Nam
Journal of Crystal Growth 510, 50-55, 2019
282019
Deep-ultraviolet AlGaN/AlN core-shell multiple quantum wells on AlN nanorods via lithography-free method
J Kim, U Choi, J Pyeon, B So, O Nam
Scientific reports 8 (1), 935, 2018
282018
Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate
T Kwak, J Lee, U Choi, B So, G Yoo, S Kim, O Nam
Diamond and Related Materials 114, 108335, 2021
212021
The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor
U Choi, D Jung, K Lee, T Kwak, T Jang, Y Nam, B So, O Nam
physica status solidi (a) 217 (7), 1900694, 2020
152020
Large area deep ultraviolet light of Al0. 47Ga0. 53N/Al0. 56Ga0. 44N multi quantum well with carbon nanotube electron beam pumping
ST Yoo, B So, HI Lee, O Nam, K Chang Park
AIP Advances 9 (7), 2019
142019
Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate
K Ko, K Lee, B So, C Heo, K Lee, T Kwak, SW Han, HY Cha, O Nam
Japanese Journal of Applied Physics 56 (1), 015502, 2016
142016
Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy
S Woo, M Kim, B So, G Yoo, J Jang, K Lee, O Nam
Journal of crystal growth 407, 6-10, 2014
132014
Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy
Y Won, B So, S Woo, D Lee, M Kim, K Nam, S Im, KB Shim, O Nam
Journal of Ceramic Processing Research 15 (2), 61-65, 2014
112014
Large-area far ultraviolet-C emission of Al0. 73Ga0. 27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping
J Lee, ST Yoo, B So, KC Park, O Nam
Thin Solid Films 711, 138292, 2020
72020
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire
U Choi, HS Kim, K Lee, D Jung, T Kwak, T Jang, Y Nam, B So, MJ Kang, ...
physica status solidi (a) 217 (7), 1900695, 2020
72020
Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity
J Lee, H Jang, T Kwak, U Choi, B So, O Nam
Solid-State Electronics 165, 107751, 2020
72020
Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition
T Kwak, J Lee, G Yoo, H Shin, U Choi, B So, S Kim, O Nam
physica status solidi (a) 217 (12), 1900973, 2020
62020
Effect on optical, structural and electrical properties by the AlGaN/AlGaN multi quantum wells with different well and barrier thicknesses
T Kim, B So, J Lee, O Nam
Thin Solid Films 680, 31-36, 2019
62019
Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer
B So, C Cheon, J Lee, J Lee, T Kwak, U Choi, JD Song, J Chang, O Nam
Thin Solid Films 708, 138103, 2020
52020
Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT
U Choi, K Lee, T Kwak, D Jung, T Jang, Y Nam, B So, HS Kim, HY Cha, ...
Japanese Journal of Applied Physics 58 (12), 121003, 2019
52019
Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method
B So, J Lee, C Cheon, J Lee, U Choi, M Kim, J Song, J Chang, O Nam
AIP Advances 11 (4), 2021
42021
Comparison of MoS2/p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition and Transfer Method
J Lee, H Jang, T Kwak, U Choi, B So, O Nam
physica status solidi (a) 217 (7), 1900722, 2020
32020
Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition
U Choi, K Lee, J Han, T Jang, Y Nam, B So, T Kwak, O Nam
Thin Solid Films 675, 148-152, 2019
32019
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