James W Pomeroy

James W Pomeroy

University of Bristol
Verified email at bristol.ac.uk
Cited by 4832
Thermography Raman GaN HEMT Reliability Diamond
Meng Zhang

Meng Zhang

Xidian University
Verified email at xidian.edu.cn
Cited by 1882
Gallium Nitride RF device power electronics GaN HEMT
Dr. Deepak Kumar Panda

Dr. Deepak Kumar Panda

Associate Professor in ECE, Amrita Vishwa Vidyapeetham, Amaravati Campus
Verified email at av.amrita.edu
Cited by 1134
Biosensor TFET GaN HEMT Compact device model development Solar Cell Design
Indranil Chatterjee

Indranil Chatterjee

Airbus eXpert - Semiconductor Devices, Airbus
Verified email at airbus.com
Cited by 1131
Semiconductor Devices Radiation Effects Reliability Physics GaN HEMT
Arivazhagan L

Arivazhagan L

RA @ University of Sharjah, UAE
Verified email at srec.ac.in
Cited by 1063
Device Modeling Trap Analysis Small Signal Modeling GaN HEMT
Nethaji Dharmarasu

Nethaji Dharmarasu

Principal Research Scientist, Temasek Laboratories@NTU, Singapore
Verified email at ntu.edu.sg
Cited by 970
GaN HEMT MOCVD MBE
Xiangdong Li (李祥东)

Xiangdong Li (李祥东)

Xidian University, imec, KU Leuven
Verified email at xidian.edu.cn
Cited by 904
GaN HEMT Reliability Power IC
June Sik Kwak

June Sik Kwak

Director, RFHIC Inc.
Verified email at rfhic.com
Cited by 578
WBG device GaN HEMT
Manikant

Manikant

Senior Quality Manager (GaN)
Verified email at nexperia.com
Cited by 484
GAN HEMT Reliability Wide bandgap semiconductor
Nitin Goyal

Nitin Goyal

Infineon Technologies AG
Verified email at infineon.com
Cited by 467
GaN HEMT GaN heterostructures III-V nitrides
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