| Nanometre-thin indium tin oxide for advanced high-performance electronics S Li, M Tian, Q Gao, M Wang, T Li, Q Hu, X Li, Y Wu Nature materials 18 (10), 1091-1097, 2019 | 313 | 2019 |
| Highly Anisotropic Sb2Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure H Song, T Li, J Zhang, Y Zhou, J Luo, C Chen, B Yang, C Ge, Y Wu, ... Advanced Materials 29 (29), 1700441, 2017 | 155 | 2017 |
| High-speed black phosphorus field-effect transistors approaching ballistic limit X Li, Z Yu, X Xiong, T Li, T Gao, R Wang, R Huang, Y Wu Science advances 5 (6), eaau3194, 2019 | 97 | 2019 |
| A transverse tunnelling field-effect transistor made from a van der Waals heterostructure X Xiong, M Huang, B Hu, X Li, F Liu, S Li, M Tian, T Li, J Song, Y Wu Nature Electronics 3 (2), 106-112, 2020 | 95 | 2020 |
| Effect of Dielectric Interface on the Performance of MoS2 Transistors X Li, X Xiong, T Li, S Li, Z Zhang, Y Wu ACS applied materials & interfaces 9 (51), 44602-44608, 2017 | 57 | 2017 |
| Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-Dielectric Q Hu, S Li, T Li, X Wang, X Li, Y Wu IEEE Electron Device Letters 39 (9), 1377-1380, 2018 | 48 | 2018 |
| High performance black phosphorus electronic and photonic devices with HfLaO dielectric X Xiong, X Li, M Huang, T Li, T Gao, Y Wu IEEE Electron Device Letters 39 (1), 127-130, 2017 | 38 | 2017 |
| High field transport of high performance black phosphorus transistors T Li, Z Zhang, X Li, M Huang, S Li, S Li, Y Wu Applied Physics Letters 110 (16), 2017 | 36 | 2017 |
| Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors X Li, Y Du, M Si, L Yang, S Li, T Li, X Xiong, P Ye, Y Wu Nanoscale 8 (6), 3572-3578, 2016 | 32 | 2016 |
| Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO as Gate Dielectric S Li, Q Hu, X Wang, T Li, X Li, Y Wu IEEE Electron Device Letters 40 (2), 295-298, 2018 | 29 | 2018 |
| Optimized transport properties in lithium doped black phosphorus transistors T Gao, X Li, X Xiong, M Huang, T Li, Y Wu IEEE Electron Device Letters 39 (5), 769-772, 2018 | 29 | 2018 |
| Anomalous temperature dependence in metal–black phosphorus contact X Li, R Grassi, S Li, T Li, X Xiong, T Low, Y Wu Nano letters 18 (1), 26-31, 2018 | 27 | 2018 |
| Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering Q Hu, B Hu, C Gu, T Li, S Li, S Li, X Li, Y Wu IEEE Transactions on Electron Devices 66 (11), 4591-4596, 2019 | 26 | 2019 |
| High-performance CVD bernal-stacked bilayer graphene transistors for amplifying and mixing signals at High frequencies M Tian, X Li, T Li, Q Gao, X Xiong, Q Hu, M Wang, X Wang, Y Wu ACS applied materials & interfaces 10 (24), 20219-20224, 2018 | 23 | 2018 |
| Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures T Li, X Li, M Tian, Q Hu, X Wang, S Li, Y Wu Nanoscale 11 (11), 4701-4706, 2019 | 22 | 2019 |
| Noise in graphene superlattices grown on hexagonal boron nitride X Li, X Lu, T Li, W Yang, J Fang, G Zhang, Y Wu ACS nano 9 (11), 11382-11388, 2015 | 22 | 2015 |
| Black phosphorus radio frequency electronics at cryogenic temperatures T Li, M Tian, S Li, M Huang, X Xiong, Q Hu, S Li, X Li, Y Wu Advanced Electronic Materials 4 (8), 1800138, 2018 | 16 | 2018 |
| Wafer scale mapping and statistical analysis of radio frequency characteristics in highly uniform CVD graphene transistors M Tian, B Hu, H Yang, C Tang, M Wang, Q Gao, X Xiong, Z Zhang, T Li, ... Advanced Electronic Materials 5 (4), 1800711, 2019 | 13 | 2019 |
| Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors X Li, T Li, Z Zhang, X Xiong, S Li, Y Wu IEEE Electron Device Letters 39 (1), 131-134, 2017 | 13 | 2017 |
| Performance and reliability improvement under high current densities in black phosphorus transistors by interface engineering X Li, J Wu, Y Ye, S Li, T Li, X Xiong, X Xu, T Gao, X Xie, Y Wu ACS Applied Materials & Interfaces 11 (1), 1587-1594, 2018 | 12 | 2018 |
Yanqing WuPeking UniversityVerified email at pku.edu.cn