| Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition F Kaess, S Mita, J Xie, P Reddy, A Klump, LH Hernandez-Balderrama, ... Journal of Applied Physics 120 (10), 2016 | 89 | 2016 |
| Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN P Reddy, S Washiyama, F Kaess, R Kirste, S Mita, R Collazo, Z Sitar Journal of Applied Physics 122 (24), 2017 | 76 | 2017 |
| Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control P Reddy, MP Hoffmann, F Kaess, Z Bryan, I Bryan, M Bobea, A Klump, ... Journal of Applied Physics 120 (18), 2016 | 65 | 2016 |
| Defect-free Ni/GaN Schottky barrier behavior with high temperature stability P Reddy, B Sarkar, F Kaess, M Gerhold, E Kohn, R Collazo, Z Sitar Applied Physics Letters 110 (1), 2017 | 47 | 2017 |
| Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications D Alden, W Guo, R Kirste, F Kaess, I Bryan, T Troha, A Bagal, P Reddy, ... Applied Physics Letters 108 (26), 2016 | 44 | 2016 |
| A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition S Washiyama, P Reddy, F Kaess, R Kirste, S Mita, R Collazo, Z Sitar Journal of Applied Physics 124 (11), 2018 | 36 | 2018 |
| High free carrier concentration in p-GaN grown on AlN substrates B Sarkar, S Mita, P Reddy, A Klump, F Kaess, J Tweedie, I Bryan, Z Bryan, ... Applied Physics Letters 111 (3), 2017 | 33 | 2017 |
| Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control A Klump, MP Hoffmann, F Kaess, J Tweedie, P Reddy, R Kirste, Z Sitar, ... Journal of Applied Physics 127 (4), 2020 | 32 | 2020 |
| High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies P Reddy, S Washiyama, F Kaess, M Hayden Breckenridge, ... Journal of Applied Physics 119 (14), 2016 | 32 | 2016 |
| On Ni/Au alloyed contacts to Mg-doped GaN B Sarkar, P Reddy, A Klump, F Kaess, R Rounds, R Kirste, S Mita, E Kohn, ... Journal of Electronic Materials 47, 305-311, 2018 | 26 | 2018 |
| Thermal conductivity of bulk and thin film [beta]-Ga2O3 measured by the 3 [omega] technique N Blumenschein, M Slomski, PP Paskov, F Kaess, MH Breckenridge, ... Oxide-based Materials and Devices IX 10533, 228-235, 2018 | 24 | 2018 |
| The effect of illumination power density on carbon defect configuration in silicon doped GaN F Kaess, P Reddy, D Alden, A Klump, LH Hernandez-Balderrama, ... Journal of Applied Physics 120 (23), 2016 | 23 | 2016 |
| High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers A Franke, MP Hoffmann, R Kirste, M Bobea, J Tweedie, F Kaess, ... Journal of Applied Physics 120 (13), 2016 | 23 | 2016 |
| Defect quasi Fermi level control-based CN reduction in GaN: evidence for the role of minority carriers P Reddy, F Kaess, J Tweedie, R Kirste, S Mita, R Collazo, Z Sitar Applied Physics Letters 111 (15), 2017 | 21 | 2017 |
| Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN AR Goñi, F Kaess, JS Reparaz, MI Alonso, M Garriga, G Callsen, ... Physical Review B 90 (4), 045208, 2014 | 18 | 2014 |
| Strain engineered high reflectivity DBRs in the deep UV A Franke, MP Hoffmann, L Hernandez-Balderrama, F Kaess, I Bryan, ... Gallium Nitride Materials and Devices XI 9748, 143-152, 2016 | 9 | 2016 |
| Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition P Reddy, S Washiyama, W Mecouch, LH Hernandez-Balderrama, ... Journal of Vacuum Science & Technology A 36 (6), 2018 | 8 | 2018 |
| Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control D Szymanski, K Wang, F Kaess, R Kirste, S Mita, P Reddy, Z Sitar, ... Semiconductor Science and Technology 37 (1), 015005, 2021 | 7 | 2021 |
| Material considerations for the development of III-nitride power devices B Sarkar, P Reddy, F Kaess, B Haidet, J Tweedie, S Mita, R Kirste, E Kohn, ... ECS Transactions 80 (7), 29, 2017 | 7 | 2017 |
| UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping M Wohlfahrt, MJ Uren, F Kaess, O Laboutin, H Hirshy, M Kuball Applied Physics Letters 118 (16), 2021 | 4 | 2021 |