| Analytical quantum mechanical model for accumulation capacitance of MOS structures S Saito, K Torii, M Hiratani, T Onai IEEE Electron Device Letters 23 (6), 348-350, 2002 | 99 | 2002 |
| Electro-luminescence from ultra-thin silicon S Saito, D Hisamoto, H Shimizu, H Hamamura, R Tsuchiya, Y Matsui, ... Japanese journal of applied physics 45 (7L), L679, 2006 | 89 | 2006 |
| Effective electron mobility reduced by remote charge scattering in high-κ gate stacks M Hiratani, S Saito, Y Shimamoto, K Torii Japanese journal of applied physics 41 (7R), 4521, 2002 | 86 | 2002 |
| Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕ SiO2 gate stacks S Saito, K Torii, Y Shimamoto, O Tonomura, D Hisamoto, T Onai, ... Journal of applied physics 98 (11), 2005 | 83 | 2005 |
| Towards monolithic integration of germanium light sources on silicon chips S Saito, AZ Al-Attili, K Oda, Y Ishikawa Semicond. Sci. Technol. 31, 043002, 2016 | 76 | 2016 |
| Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors S Saito, K Torii, M Hiratani, T Onai Applied physics letters 81 (13), 2391-2393, 2002 | 72 | 2002 |
| All-silicon carrier accumulation modulator based on a lateral metal-oxide-semiconductor capacitor K Debnath, DJ Thomson, W Zhang, AZ Khokhar, C Littlejohns, J Byers, ... Photonics Research 6 (5), 373-379, 2018 | 70 | 2018 |
| Unified mobility model for high-k gate stacks S Saito Tech. Dig. of IEDM, 2003, 797-800, 2003 | 70* | 2003 |
| The impact of sub monolayers of HfO~ 2 on the device performance of high-k based transistors LA Ragnarsson, L Pantisano, V Kaushik, SI Saito, Y Shimamoto, ... INTERNATIONAL ELECTRON DEVICES MEETING 1 (1), 87-90, 2003 | 69* | 2003 |
| Silicon light-emitting transistor for on-chip optical interconnection S Saito, D Hisamoto, H Shimizu, H Hamamura, R Tsuchiya, Y Matsui, ... Applied Physics Letters 89 (16), 2006 | 61 | 2006 |
| Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics S Saito, K Torii, Y Shimamoto, S Tsujikawa, H Hamamura, O Tonomura, ... Applied Physics Letters 84 (8), 1395-1397, 2004 | 60 | 2004 |
| Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well S Saito, Y Suwa, H Arimoto, N Sakuma, D Hisamoto, H Uchiyama, ... Applied Physics Letters 95 (24), 2009 | 57 | 2009 |
| Group IV light sources to enable the convergence of photonics and electronics S Saito, F Gardes, A Al-Attili, K Tani, K Oda, Y Suwa, T Ido, Y Ishikawa, ... Front. Mater. 1, 15, 2014 | 55 | 2014 |
| Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC D Hisamoto, S Saito, S Kimura US Patent 8,030,668, 2011 | 53 | 2011 |
| Semiconductor photodiode device and manufacturing method thereof M Miura, S Saito, Y Lee, K Oda US Patent 8,350,301, 2013 | 52 | 2013 |
| 1.5-V operating fully-depleted amorphous oxide thin film transistors achieved by 63-mV/dec subthreshold slope T Kawamura, H Uchiyama, S Saito, H Wakana, T Mine, M Hatano, K Torii, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 51 | 2008 |
| The mechanism of mobility degradation in MISFETs with Al/sub 2/O/sub 3/gate dielectric K Torii, Y Shimamoto, S Saito, O Tonomura, M Hiratani, Y Manabe, ... 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 43 | 2002 |
| Ge-on-Si photonic devices for photonic-electronic integration on a Si platform Y Ishikawa, S Saito IEICE Electronics Express 11 (24), 20142008-20142008, 2014 | 42 | 2014 |
| High bandwidth capacitance efficient silicon MOS modulator W Zhang, K Debnath, B Chen, K Li, S Liu, M Ebert, J Dean Reynolds, ... Journal of lightwave technology 39 (1), 201-207, 2021 | 39 | 2021 |
| Optical device K Hosomi, T Sugawara, Y Matsuoka, H Arimoto, S Saito US Patent App. 12/385,736, 2009 | 39 | 2009 |
F Y GardesProfessor ,University of SouthamptonVerified email at soton.ac.uk