| Ferroelectric tunneling junctions based on aluminum oxide/zirconium-doped hafnium oxide for neuromorphic computing H Ryu, H Wu, F Rao, W Zhu Scientific reports 9 (1), 20383, 2019 | 191 | 2019 |
| Exploring new metal electrodes for ferroelectric aluminum-doped hafnium oxide H Ryu, K Xu, J Kim, S Kang, J Guo, W Zhu IEEE Transactions on Electron Devices 66 (5), 2359-2364, 2019 | 46 | 2019 |
| Empowering 2D nanoelectronics via ferroelectricity H Ryu, K Xu, D Li, X Hong, W Zhu Applied Physics Letters 117 (8), 2020 | 44 | 2020 |
| Strong Temperature Effect on the Ferroelectric Properties of CuInP2S6 and Its Heterostructures Z Zhao, K Xu, H Ryu, W Zhu ACS applied materials & interfaces 12 (46), 51820-51826, 2020 | 37 | 2020 |
| Demonstration of a Stacked CMOS Inverter at 60nm Gate Pitch with Power Via and Direct Backside Device Contacts M Radosavljević, CY Huang, R Galatage, MF Qayyum, JA Wiedemer, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 13 | 2023 |
| High temperature operation of E-mode and D-mode AlGaN/GaN MIS-HEMTs with recessed gates H Lee, H Ryu, J Kang, W Zhu IEEE Journal of the Electron Devices Society 11, 167-173, 2023 | 13 | 2023 |
| Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing Z Zhao, J Kang, A Tunga, H Ryu, A Shukla, S Rakheja, W Zhu ACS nano 18 (4), 2763-2771, 2024 | 10 | 2024 |
| Stable high temperature operation of p-GaN gate HEMT with etch-stop layer H Lee, H Ryu, J Kang, W Zhu IEEE Electron Device Letters, 2024 | 7 | 2024 |
| Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation H Lee, H Ryu, W Zhu Applied Physics Letters 122 (11), 2023 | 7 | 2023 |
| Nonconventional analog comparators based on graphene and ferroelectric hafnium zirconium oxide J Liu, H Ryu, W Zhu IEEE Transactions on Electron Devices 68 (3), 1334-1339, 2021 | 6 | 2021 |
| Ferroelectric tunneling junctions for neurosynaptic computing H Ryu, H Wu, F Rao, W Zhu 2019 Device Research Conference (DRC), 191-192, 2019 | 5 | 2019 |
| Ferroelectric Zr-doped Hafnium Oxide for Memory Applications H Ryu, K Xu, D Kim, F Rao, W Zhu 49th IEEE Semiconductor Interface Specialists Conference 2018, 2018 | 2 | 2018 |
| Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO H Ryu, J Kang, M Park, B Bae, Z Zhao, S Rakheja, K Lee, W Zhu ACS Applied Materials & Interfaces 15 (46), 53671-53677, 2023 | 1 | 2023 |
| Nanoscale Devices Based on Two-dimensional Materials and Ferroelectric Materials Z Yao, H Ryu, K Xu, J Liu, Y Cai, Y Yan, W Zhu 2018 14th IEEE International Conference on Solid-State and Integrated …, 2018 | 1 | 2018 |
| Ferroelectric Aluminum-Doped Hafnium Oxide for Memory Applications H Ryu, K Xu, J Guo, W Zhu 2018 76th Device Research Conference (DRC), 1-2, 2018 | 1 | 2018 |
| TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT P Debashis, DA Adams, G Auluck, SB Clendenning, A Sen Gupta, ... US Patent App. 18/346,212, 2025 | | 2025 |
| Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p-Type High-Performance Transistors P Debashis, H Ryu, R Steinhardt, P Buragohain, JJ Plombon, K Maxey, ... Nano Letters 24 (40), 12353-12360, 2024 | | 2024 |
| Field effect transistor comprising transition metal dichalcogenide (tmd) and ferroelectric material H Ryu, P Debashis, RA Steinhardt, KP O'brien, JJ Plombon, DE Nikonov, ... US Patent App. 18/148,871, 2024 | | 2024 |
| High temperature operation of p-GaN/AlGaN/GaN based devices H Lee, H Ryu, W Zhu APS March Meeting Abstracts 2023, M34. 005, 2023 | | 2023 |
| Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials Z Zhao, K Xu, J Liu, W Jiang, H Ryu, S Rakheja, T Low, W Zhu 2022 Device Research Conference (DRC), 1-2, 2022 | | 2022 |
Wenjuan ZhuAssociate Professor, University of Illinois at Urbana-ChampaignVerified email at illinois.edu