| Enhanced ferroelectricity in ultrathin films grown directly on silicon SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ... Nature 580 (7804), 478-482, 2020 | 727 | 2020 |
| Spatially resolved steady-state negative capacitance AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ... Nature 565 (7740), 468-471, 2019 | 358 | 2019 |
| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 224 | 2022 |
| Negative capacitance FET with 1.8-nm-thick Zr-doped HfO 2 oxide D Kwon*, S Cheema*, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ... IEEE Electron Device Letters 40 (6), 993-996, 2019 | 140 | 2019 |
| Emergent ferroelectricity in subnanometer binary oxide films on silicon SS Cheema, N Shanker, SL Hsu, Y Rho, CH Hsu, VA Stoica, Z Zhang, ... Science 376 (6593), 648-652, 2022 | 123 | 2022 |
| Spin-orbit torques in ferrimagnetic GdFeCo alloys N Roschewsky, T Matsumura, S Cheema, F Hellman, T Kato, S Iwata, ... Applied Physics Letters 109 (11), 2016 | 116 | 2016 |
| One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon SS Cheema, N Shanker, CH Hsu, A Datar, J Bae, D Kwon, S Salahuddin Advanced Electronic Materials 8 (6), 2100499, 2022 | 108 | 2022 |
| Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ... IEEE Electron Device Letters 41 (2), 240-243, 2019 | 63 | 2019 |
| Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors JH Bae, D Kwon, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin IEEE Electron Device Letters 41 (11), 1637-1640, 2020 | 57 | 2020 |
| Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack D Kwon*, S Cheema*, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ... IEEE Electron Device Letters 41 (1), 179-182, 2019 | 47 | 2019 |
| Ultrafast high-endurance memory based on sliding ferroelectrics K Yasuda, E Zalys-Geller, X Wang, D Bennett, SS Cheema, K Watanabe, ... Science 385 (6704), 53-56, 2024 | 45 | 2024 |
| Giant energy storage and power density negative capacitance superlattices S Cheema, N Shanker, S Hsu, J Schaadt, N Ellis, M Cook, R Rastogi, ... Nature 629 (8013), 803-809, 2024 | 28 | 2024 |
| Electric field-induced permittivity enhancement in negative-capacitance FET YH Liao, D Kwon, S Cheema, N Shanker, AJ Tan, MY Kao, LC Wang, ... IEEE Transactions on Electron Devices 68 (3), 1346-1351, 2021 | 13 | 2021 |
| Enhancement in Capacitance and Transconductance in 90 nm nFETs with HfO2-ZrO2 Superlattice Gate Stack for Energy-efficient Cryo-CMOS W Li, LC Wang, SS Cheema, N Shanker, C Hu, S Salahuddin 2022 International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2022 | 10 | 2022 |
| FeFETs for near-memory and in-memory compute S Salahuddin, A Tan, S Cheema, N Shanker, M Hoffmann, JH Bae 2021 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2021 | 10 | 2021 |
| CMOS Demonstration of Negative Capacitance HfO 2-ZrO 2 Superlattice Gate Stack in a Self-Aligned, Replacement Gate Process N Shanker*, M Cook*, SS Cheema*, W Li*, R Rastogi, D Pipitone, C Chen, ... 2022 International Electron Devices Meeting (IEDM), 34.3. 1-34.3. 4, 2022 | 8 | 2022 |
| Demonstration of Low EOT Gate Stack and Record Transconductance on nm nFETs Using 1.8 nm Ferroic HfO2-ZrO2 Superlattice W Li, LC Wang, SS Cheema, N Shanker, JH Park, YH Liao, SL Hsu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2021 | 7 | 2021 |
| Negative capacitance enables FinFET scaling beyond 3nm node MY Kao, H Agarwal, YH Liao, S Cheema, A Dasgupta, P Kushwaha, ... arXiv preprint arXiv:2007.14448, 2020 | 6 | 2020 |
| In-Situ Measurement of Magnetoelectric Coupling and Strain Transfer in Multiferroic Nanocomposites of CoFe2O4 and Hf0.5Zr0.5O2 with Residual Porosity SK Patel, DD Robertson, SS Cheema, S Salahuddin, SH Tolbert Nano Letters 23 (8), 3267-3273, 2023 | 5 | 2023 |
| Quantitative study of EOT lowering in negative capacitance HfO₂-ZrO₂ superlattice gate stacks M Hoffmann*, SS Cheema*, N Shanker*, W Li, S Salahuddin 2022 International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2022 | 5 | 2022 |
