| Electronic measurement and control of spin transport in silicon I Appelbaum, B Huang, DJ Monsma Nature 447 (7142), 295-298, 2007 | 984 | 2007 |
| Ultra-bright source of polarization-entangled photons PG Kwiat, E Waks, AG White, I Appelbaum, PH Eberhard Phys. Rev. A 99, R773, 1999 | 924 | 1999 |
| Coherent spin transport through a 350 micron thick silicon wafer B Huang, DJ Monsma, I Appelbaum Physical Review Letters 99 (17), 177209, 2007 | 437 | 2007 |
| Electrons and holes in phosphorene P Li, I Appelbaum Physical Review B 90 (11), 115439, 2014 | 212 | 2014 |
| Detecting Majorana modes in one-dimensional wires by charge sensing G Ben-Shach, A Haim, I Appelbaum, Y Oreg, A Yacoby, BI Halperin Physical Review B 91 (4), 045403, 2015 | 82 | 2015 |
| Observation of Transverse Hyperon Polarization in Annihilation at Belle Y Guan, A Vossen, I Adachi, K Adamczyk, JK Ahn, H Aihara, S Al Said, ... Physical review letters 122 (4), 042001, 2019 | 81 | 2019 |
| Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices B Huang, HJ Jang, I Appelbaum Applied Physics Letters 93 (16), 2008 | 80 | 2008 |
| Experimental realization of a silicon spin field-effect transistor B Huang, DJ Monsma, I Appelbaum Applied Physics Letters 91 (7), 2007 | 71 | 2007 |
| Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers P Li, I Appelbaum Physical Review B 92 (19), 195129, 2015 | 66 | 2015 |
| Anisotropy-driven spin relaxation in germanium P Li, J Li, L Qing, H Dery, I Appelbaum Physical review letters 111 (25), 257204, 2013 | 64 | 2013 |
| Spin polarized electron transport near the Si/SiO 2 interface HJ Jang, I Appelbaum Physical review letters 103 (11), 117202, 2009 | 61 | 2009 |
| Proposal for a topological plasmon spin rectifier I Appelbaum, HD Drew, MS Fuhrer Applied Physics Letters 98 (2), 2011 | 56 | 2011 |
| Near-field scanning optical microscopy as a simultaneous probe of fields and band structure of photonic crystals: A computational study S Fan, I Appelbaum, JD Joannopoulos Applied Physics Letters 75 (22), 3461-3463, 1999 | 52 | 1999 |
| Field-induced negative differential spin lifetime in silicon J Li, L Qing, H Dery, I Appelbaum Physical review letters 108 (15), 157201, 2012 | 46 | 2012 |
| Spin dephasing in drift-dominated semiconductor spintronics devices B Huang, I Appelbaum Physical Review B—Condensed Matter and Materials Physics 77 (16), 165331, 2008 | 46 | 2008 |
| 35% magnetocurrent with spin transport through Si B Huang, L Zhao, DJ Monsma, I Appelbaum Applied Physics Letters 91 (5), 2007 | 46 | 2007 |
| Inelastic electron tunneling spectroscopy of local “spin accumulation” devices HN Tinkey, P Li, I Appelbaum Applied Physics Letters 104 (23), 2014 | 43 | 2014 |
| Modeling spin transport in electrostatically-gated lateral-channel silicon devices: Role of interfacial spin relaxation J Li, I Appelbaum Physical Review B—Condensed Matter and Materials Physics 84 (16), 165318, 2011 | 43 | 2011 |
| Transit-time spin field-effect transistor I Appelbaum, DJ Monsma Applied physics letters 90 (26), 2007 | 41 | 2007 |
| Room-temperature electro-optic up-conversion via internal photoemission KJ Russell, I Appelbaum, H Temkin, CH Perry, V Narayanamurti, ... Applied physics letters 82 (18), 2960-2962, 2003 | 41 | 2003 |
Hanan DeryProfessor of Electrical and Computer Engineering, University of RochesterVerified email at rochester.edu