| Analysis and Control of the DC Drift in LiNbO-Based Mach–Zehnder Modulators JP Salvestrini, L Guilbert, M Fontana, M Abarkan, S Gille Journal of lightwave technology 29 (10), 1522-1534, 2011 | 234 | 2011 |
| Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy X Li, S Sundaram, Y El Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ... Crystal Growth & Design 16 (6), 3409-3415, 2016 | 139 | 2016 |
| Bandgap energy bowing parameter of strained and relaxed InGaN layers G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ... Optical Materials Express 4 (5), 1030-1041, 2014 | 128 | 2014 |
| Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN T Ayari, S Sundaram, X Li, Y El Gmili, PL Voss, JP Salvestrini, ... Applied Physics Letters 108 (17), 2016 | 92 | 2016 |
| Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems Y Halfaya, C Bishop, A Soltani, S Sundaram, V Aubry, PL Voss, ... Sensors 16 (3), 273, 2016 | 88 | 2016 |
| Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals M Abarkan, JP Salvestrini, MD Fontana, M Aillerie Applied Physics B 76, 765-769, 2003 | 72 | 2003 |
| Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications T Ayari, C Bishop, MB Jordan, S Sundaram, X Li, S Alam, Y ElGmili, ... Scientific reports 7 (1), 15212, 2017 | 68 | 2017 |
| Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ... Applied Physics Letters 100 (5), 2012 | 68 | 2012 |
| Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ... Acta Materialia 61 (17), 6587-6596, 2013 | 62 | 2013 |
| Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE X Li, MB Jordan, T Ayari, S Sundaram, Y El Gmili, S Alam, M Alam, ... Scientific reports 7 (1), 786, 2017 | 53 | 2017 |
| Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT C Bishop, Y Halfaya, A Soltani, S Sundaram, X Li, J Streque, Y El Gmili, ... IEEE Sensors Journal 16 (18), 6828-6838, 2016 | 52 | 2016 |
| BAlN thin layers for deep UV applications X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ... physica status solidi (a) 212 (4), 745-750, 2015 | 52 | 2015 |
| MOVPE grown periodic AlN/BAlN heterostructure with high boron content X Li, S Sundaram, Y El Gmili, F Genty, S Bouchoule, G Patriache, ... Journal of Crystal Growth 414, 119-122, 2015 | 50 | 2015 |
| Optical characterizations of YCa4O (BO3) 3 and Nd: YCa4O (BO3) 3 crystals P Segonds, B Boulanger, B Ménaert, J Zaccaro, JP Salvestrini, ... Optical Materials 29 (8), 975-982, 2007 | 48 | 2007 |
| Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices H Srour, JP Salvestrini, A Ahaitouf, S Gautier, T Moudakir, B Assouar, ... Applied Physics Letters 99 (22), 2011 | 47 | 2011 |
| AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ... Optical Materials Express 5 (2), 380-392, 2015 | 46 | 2015 |
| Electric-field frequency dependence of Pockels coefficients in 2-amino-5-nitropyridium dihydrogen phosphate organic–inorganic crystals J Zaccaro, JP Salvestrini, A Ibanez, P Ney, MD Fontana JOSA B 17 (3), 427-432, 2000 | 44 | 2000 |
| Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery CE Munson, Q Gaimard, K Merghem, S Sundaram, DJ Rogers, ... Journal of Physics D: Applied Physics 51 (3), 035101, 2017 | 43 | 2017 |
| Interface state effects in GaN Schottky diodes A Ahaitouf, H Srour, SOS Hamady, N Fressengeas, A Ougazzaden, ... Thin Solid Films 522, 345-351, 2012 | 42 | 2012 |
| Model of Ni-63 battery with realistic PIN structure AO Charles E. Munson IV, Muhammad Arif, Jeremy Streque, Sofiane Belahsene ... Journal of Applied Physics 118, 105101, 2015 | 40* | 2015 |
OugazzadenGeorgia Institute of TechnologyVerified email at georgiatech-metz.fr