| High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ... 2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013 | 125 | 2013 |
| A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 112 | 2014 |
| Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir–Blodgett method S Huang, G Tsutsui, H Sakaue, S Shingubara, T Takahagi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 99 | 2001 |
| Channel geometry impact and narrow sheet effect of stacked nanosheet CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ... 2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018 | 93 | 2018 |
| Well-size-controlled colloidal gold nanoparticles dispersed in organic solvents GTG Tsutsui, SHS Huang, HSH Sakaue, SSS Shingubara, TTT Takahagi Japanese Journal of Applied Physics 40 (1R), 346, 2001 | 85 | 2001 |
| Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs G Tsutsui, M Saitoh, T Hiramoto IEEE electron device letters 26 (11), 836-838, 2005 | 80 | 2005 |
| Impact of SOI thickness fluctuation on threshold voltage variation in ultra-thin body SOI MOSFETs G Tsutsui, M Saitoh, T Nagumo, T Hiramoto IEEE Transactions on nanotechnology 4 (3), 369-373, 2005 | 72 | 2005 |
| FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 71 | 2016 |
| Formation of a large-scale Langmuir–Blodgett monolayer of alkanethiol-encapsulated gold particles S Huang, G Tsutsui, H Sakaue, S Shingubara, T Takahagi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 67 | 2001 |
| Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm G Tsutsui, M Saitoh, T Saraya, T Nagumo, T Hiramoto IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 64 | 2005 |
| Mobility and threshold-voltage comparison between [110]-and (100)-oriented ultrathin-body silicon MOSFETs G Tsutsui, T Hiramoto IEEE Transactions on Electron Devices 53 (10), 2582-2588, 2006 | 60 | 2006 |
| Strain engineering in functional materials G Tsutsui, S Mochizuki, N Loubet, SW Bedell, DK Sadana AIP Advances 9 (3), 2019 | 59 | 2019 |
| Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ... 2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018 | 47 | 2018 |
| Vertical-transport nanosheet technology for CMOS scaling beyond lateral-transport devices H Jagannathan, B Anderson, CW Sohn, G Tsutsui, J Strane, R Xie, S Fan, ... 2021 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2021 | 45 | 2021 |
| Emerging nanoscale silicon devices taking advantage of nanostructure physics T Hiramoto, M Saitoh, G Tsutsui IBM Journal of Research and Development 50 (4.5), 411-418, 2006 | 41 | 2006 |
| Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs A Paul, A Bryant, TB Hook, CC Yeh, V Kamineni, JB Johnson, N Tripathi, ... 2013 IEEE International Electron Devices Meeting, 13.5. 1-13.5. 4, 2013 | 36 | 2013 |
| Ti and NiPt/Ti liner silicide contacts for advanced technologies P Adusumilli, E Alptekin, M Raymond, N Breil, F Chafik, C Lavoie, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 30 | 2016 |
| Semiconductor device and method of manufacturing the same T Abe, G Tsutsui, T Fukase, Y Nakahara, K Imai US Patent App. 11/874,221, 2008 | 25 | 2008 |
| Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles S Huang, G Tsutsui, H Sakaue, S Shingubara, T Takahagi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 21 | 2000 |
| Channel length and threshold voltage dependence of transistor mismatch in a 32-nm HKMG technology TB Hook, JB Johnson, JP Han, A Pond, T Shimizu, G Tsutsui IEEE transactions on electron devices 57 (10), 2440-2447, 2010 | 17 | 2010 |