| O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors B Ryu, HK Noh, E Choi, KJ Chang Applied physics letters 97 (2), 2010 | 487 | 2010 |
| Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors HK Noh, KJ Chang, B Ryu, WJ Lee Physical Review B—Condensed Matter and Materials Physics 84 (11), 115205, 2011 | 322 | 2011 |
| Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors HK Noh, JS Park, KJ Chang Journal of Applied Physics 113 (6), 2013 | 74 | 2013 |
| In0.53Ga0.47As-Based nMOSFET Design for Low Standby Power Applications KK Bhuwalka, Z Wu, HK Noh, W Lee, M Cantoro, YC Heo, S Jin, W Choi, ... IEEE Transactions on Electron Devices 62 (9), 2816-2823, 2015 | 34 | 2015 |
| The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors YJ Oh, HK Noh, KJ Chang Science and Technology of Advanced Materials 16 (3), 034902, 2015 | 26 | 2015 |
| Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO interface YJ Oh, AT Lee, HK Noh, KJ Chang Physical Review B—Condensed Matter and Materials Physics 87 (7), 075325, 2013 | 21 | 2013 |
| Ab initio study of boron segregation and deactivation at Si/SiO2 interface YJ Oh, JH Hwang, HK Noh, J Bang, B Ryu, KJ Chang Microelectronic engineering 89, 120-123, 2012 | 20 | 2012 |
| Method for forming pattern of semiconductor device and semiconductor device formed using the same S Song, HK Noh, K TaeYong, S Kim, S Maeda, K Bhuwalka, K Uihui, ... US Patent App. 14/711,394, 2016 | 17 | 2016 |
| First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 YJ Oh, HK Noh, KJ Chang Physica B: Condensed Matter 407 (15), 2989-2992, 2012 | 9 | 2012 |
| Automatic modeling of logic device performance based on machine learning and explainable AI S Kim, K Lee, HK Noh, Y Shin, KB Chang, J Jeong, S Baek, M Kang, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 6 | 2020 |
| Memory device KS Chae, T Rim, H Noh, W Lee US Patent App. 16/563,853, 2020 | 6 | 2020 |
| Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 HK Noh, B Ryu, E Choi, J Bang, KJ Chang Applied Physics Letters 95 (8), 2009 | 6 | 2009 |
| A simulation physics-guided neural network for predicting semiconductor structure with few experimental data QH Kim, S Lee, A Ma, J Kim, HK Noh, KB Chang, W Cheon, S Yi, J Jeong, ... Solid-State Electronics 201, 108568, 2023 | 4 | 2023 |
| Impact of BTBT, stress and interface charge on optimum Ge in SiGe pMOS for low power applications S Dhar, HK Noh, SJ Kim, HW Kim, Z Wu, WS Lee, KK Bhuwalka, JC Kim, ... 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 4 | 2016 |
| Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces HK Noh, YJ Oh, KJ Chang Physica B: Condensed Matter 407 (15), 2907-2910, 2012 | 3 | 2012 |
| One-loop scalar integrals contributing to resummation of relativistic corrections to Γ [J/ψ→ e+ e-] J Lee, HK Noh, C Yu Journal of the Korean Physical Society 50 (2), 403-408, 2007 | 3 | 2007 |
| Simulation system for semiconductor process and simulation method thereof S Myung, J Hyunjae, HUH In, HK Noh, MC Park, C Jeong US Patent 11,574,095, 2023 | 1 | 2023 |
| Method and system for hybrid model including machine learning model and rule-based model C Jeong, S Myung, HUH In, H Noh, M Park, J Hyunjae US Patent App. 16/910,908, 2021 | 1 | 2021 |
| Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO {sub 2} and Ni/HfO {sub 2} interfaces HK Noh, YJ Oh, KJ Chang Physica. B, Condensed Matter 407, 2012 | 1 | 2012 |
| One-loop master integral for order-v2n relativistic corrections to Γ [J/ψ→ e+ e-] J Lee, HK Noh, C Yu Journal of the Korean Physical Society 50 (2), 398-402, 2007 | 1 | 2007 |
Kee Joo ChangKorea Advanced Institute of Science and TechnologyVerified email at kaist.ac.kr
