| High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ... Applied Physics Letters 78 (9), 1252-1254, 2001 | 316 | 2001 |
| Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN P Perlin, J Camassel, W Knap, T Taliercio, JC Chervin, T Suski, I Grzegory, ... Applied Physics Letters 67 (17), 2524-2526, 1995 | 273 | 1995 |
| Influence of electron-phonon interaction on the optical properties of III nitride semiconductors XB Zhang, T Taliercio, S Kolliakos, P Lefebvre Journal of Physics: Condensed Matter 13 (32), 7053, 2001 | 253 | 2001 |
| Internal electric field in wurtzite quantum wells C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ... Physical Review B—Condensed Matter and Materials Physics 72 (24), 241305, 2005 | 245 | 2005 |
| Radiative lifetime of a single electron-hole pair in quantum dots T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ... Physical Review B—Condensed Matter and Materials Physics 73 (11), 113304, 2006 | 150 | 2006 |
| Semiconductor infrared plasmonics T Taliercio, P Biagioni Nanophotonics 8 (6), 949-990, 2019 | 143 | 2019 |
| Near-field thermophotovoltaic conversion with high electrical power density and cell efficiency above 14% C Lucchesi, D Cakiroglu, JP Perez, T Taliercio, E Tournié, PO Chapuis, ... Nano Letters 21 (11), 4524-4529, 2021 | 126 | 2021 |
| Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In) N/GaN systems A Morel, P Lefebvre, S Kalliakos, T Taliercio, T Bretagnon, B Gil Physical Review B 68 (4), 045331, 2003 | 126 | 2003 |
| Barrier composition dependence of the internal electric field in ZnO∕ Zn1− xMgxO quantum wells T Bretagnon, P Lefebvre, T Guillet, T Taliercio, B Gil, C Morhain Applied physics letters 90 (20), 2007 | 96 | 2007 |
| Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory R Bardoux, T Guillet, B Gil, P Lefebvre, T Bretagnon, T Taliercio, ... Physical Review B—Condensed Matter and Materials Physics 77 (23), 235315, 2008 | 86 | 2008 |
| Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes S Kalliakos, XB Zhang, T Taliercio, P Lefebvre, B Gil, N Grandjean, ... Applied physics letters 80 (3), 428-430, 2002 | 86 | 2002 |
| Localized surface plasmon resonances in highly doped semiconductors nanostructures V N'Tsame Guilengui, L Cerutti, JB Rodriguez, E Tournié, T Taliercio Applied Physics Letters 101 (16), 2012 | 81 | 2012 |
| Photoluminescence of single hexagonal quantum dots on : Spectral diffusion effects R Bardoux, T Guillet, P Lefebvre, T Taliercio, T Bretagnon, S Rousset, ... Physical Review B—Condensed Matter and Materials Physics 74 (19), 195319, 2006 | 81 | 2006 |
| Brewster “mode” in highly doped semiconductor layers: an all-optical technique to monitor doping concentration T Taliercio, VN Guilengui, L Cerutti, E Tournié, JJ Greffet Optics express 22 (20), 24294-24303, 2014 | 79 | 2014 |
| Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite quantum well after high photoexcitation P Lefebvre, S Kalliakos, T Bretagnon, P Valvin, T Taliercio, B Gil, ... Physical Review B 69 (3), 035307, 2004 | 74 | 2004 |
| Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes P Lefebvre, T Taliercio, A Morel, J Allègre, M Gallart, B Gil, H Mathieu, ... Applied Physics Letters 78 (11), 1538-1540, 2001 | 71 | 2001 |
| All-semiconductor plasmonic gratings for biosensing applications in the mid-infrared spectral range FB Barho, F Gonzalez-Posada, MJ Milla-Rodrigo, M Bomers, L Cerutti, ... Optics express 24 (14), 16175-16190, 2016 | 70 | 2016 |
| Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties R Viennois, T Taliercio, V Potin, A Errebbahi, B Gil, S Charar, A Haidoux, ... Materials Science and Engineering: B 82 (1-3), 45-49, 2001 | 70 | 2001 |
| Acoustic investigation of porous silicon layers RJM Da Fonseca, JM Saurel, A Foucaran, J Camassel, E Massone, ... Journal of materials science 30, 35-39, 1995 | 67 | 1995 |
| Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes S Kalliakos, T Bretagnon, P Lefebvre, T Taliercio, B Gil, N Grandjean, ... Journal of applied physics 96 (1), 180-185, 2004 | 63 | 2004 |
