| Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption G Antoun, T Tillocher, P Lefaucheux, J Faguet, K Maekawa, R Dussart Scientific Reports 11 (1), 357, 2021 | 25 | 2021 |
| Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma G Antoun, P Lefaucheux, T Tillocher, R Dussart, K Yamazaki, K Yatsuda, ... Applied Physics Letters 115 (15), 2019 | 24 | 2019 |
| Rydberg states of SiF in the vacuum ultraviolet Y Houbrechts, I Dubois, H Bredohl Journal of Physics B: Atomic and Molecular Physics 15 (24), 4551, 1982 | 16 | 1982 |
| Comparison between Bosch and STiGer processes for deep silicon etching T Tillocher, J Nos, G Antoun, P Lefaucheux, M Boufnichel, R Dussart Micromachines 12 (10), 1143, 2021 | 12 | 2021 |
| The role of physisorption in the cryogenic etching process of silicon G Antoun, R Dussart, T Tillocher, P Lefaucheux, C Cardinaud, A Girard, ... Japanese Journal of Applied Physics 58 (SE), SEEB03, 2019 | 12 | 2019 |
| Cryogenic etching of silicon compounds using a CHF3 based plasma R Dussart, R Ettouri, J Nos, G Antoun, T Tillocher, P Lefaucheux Journal of Applied Physics 133 (11), 2023 | 9 | 2023 |
| Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas G Antoun, T Tillocher, A Girard, P Lefaucheux, J Faguet, H Kim, D Zhang, ... Journal of Vacuum Science & Technology A 40 (5), 2022 | 9 | 2022 |
| Quasi in situ XPS on a SiOxFy layer deposited on Silicon by a cryogenic process G Antoun, A Girard, T Tillocher, P Lefaucheux, J Faguet, K Maekawa, ... ECS Journal of Solid State Science and Technology 11 (1), 013013, 2022 | 7 | 2022 |
| Selective etching with fluorine, oxygen and noble gas containing plasmas D Zhang, H Kim, S Tahara, K Maekawa, M Wang, J Faguet, R Dussart, ... US Patent 12,131,914, 2024 | | 2024 |
| Limits and interest of a low surface temperature for plasma etching processes C Cardinaud, F Cemin, A Girard, G Antoun, T Tillocher, P Lefaucheux, ... Plasma Etch and Strip for Microelectronics-Plasma Cryoetching Processes, 2024 | | 2024 |
| Plasma cryogenic etching processes: what are the mechanisms involved at very low temperature? R Dussart, T Tillocher, G Antoun, J Nos, P Lefaucheux, A Girard, ... 14th EU-Japan Joint Symposium on Plasma Processing (JSPP) 2023, 2023 | | 2023 |
| Passivation mechanisms involved in cryo-etching processes R Dussart, T Tillocher, P Lefaucheux, J Nos, G Antoun, A Girard, ... ISPLASMA 2023/ICPLANTS 2023, 2023 | | 2023 |
| SF6 Physisorption based cryo-ALE of silicon J Nos, G Antoun, T Tillocher, P Lefaucheux, A Girard, C Cardinaud, ... ALD-ALE, 2022 | | 2022 |
| An overview of cryo-etching: from its birth to its recent renewed interest R Dussart, T Tillocher, G Antoun, P Lefaucheux PlaCEP 2022, 2022 | | 2022 |
| Cryo-ALE of Si and SiO2 using SF6 Physisorption J Nos, G Antoun, T Tillocher, P Lefaucheux, R Dussart, A Girard, ... PlaCEP 2022, 2022 | | 2022 |
| Etching method and etching apparatus S Tahara, J Faguet, K Maekawa, K Ono, S Nagisa, R Dussart, T Tillocher, ... US Patent App. 17/547,238, 2022 | | 2022 |
| Author Correction: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption G Antoun, T Tillocher, P Lefaucheux, J Faguet, K Maekawa, R Dussart Scientific Reports 12, 2022 | | 2022 |
| Plasma cryogenic etching: benefits of cooling the substrate at a low temperature in etching process technologies R Dussart, T Tillocher, G Antoun, J Nos, P Lefaucheux, A Girard, ... 42nd International Symposium on Dry Process, 2021 | | 2021 |
| Plasma etching method K Yatsuda, K Maekawa, S Nagisa, K Ono, S Tahara, J Faguet, R Dussart, ... US Patent 11,120,999, 2021 | | 2021 |
| Cryo-ALE of Silicon based on SF6 physisorption J Nos, G Antoun, T Tillocher, P Lefaucheux, J Faguet, K Maekawa, ... PLATHINIUM 2021, 2021 | | 2021 |