| Symmetry-dependent field-free switching of perpendicular magnetization L Liu, C Zhou, X Shu, C Li, T Zhao, W Lin, J Deng, Q Xie, S Chen, J Zhou, ... Nature Nanotechnology 16 (3), 277-282, 2021 | 259 | 2021 |
| Current-induced magnetization switching in all-oxide heterostructures L Liu#, Q Qin#, W Lin#, C Li, Q Xie, S He, X Shu, C Zhou, Z Lim, J Yu, ... Nature Nanotechnology, 1-6, 2019 | 195 | 2019 |
| Emergence of Topological Hall Effect in a SrRuO3 Single Layer Q Qin#, L Liu#, W Lin#, X Shu, Q Xie, Z Lim, C Li, S He, GM Chow, J Chen Advanced Materials 31 (8), 1807008, 2019 | 162 | 2019 |
| Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect R Guo, L You, W Lin, A Abdelsamie, X Shu, G Zhou, S Chen, L Liu, X Yan, ... Nature communications 11 (1), 2571, 2020 | 149 | 2020 |
| Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation HY Peng, YF Li, WN Lin, YZ Wang, XY Gao, T Wu Scientific reports 2, 442, 2012 | 145 | 2012 |
| Ferroic tunnel junctions and their application in neuromorphic networks R Guo#, W Lin#, X Yan#, T Venkatesan, J Chen Applied Physics Reviews 7 (1), 011304, 2020 | 136 | 2020 |
| Nonvolatile Resistive Switching in Heterostructures S Wu, X Luo, S Turner, H Peng, W Lin, J Ding, A David, B Wang, ... Physical Review X 3 (4), 041027, 2013 | 132 | 2013 |
| Control of synaptic plasticity learning of ferroelectric tunnel memristor by nanoscale interface engineering R Guo, Y Zhou, L Wu, Z Wang, Z Lim, X Yan, W Lin, H Wang, HY Yoong, ... ACS applied materials & interfaces 10 (15), 12862-12869, 2018 | 124 | 2018 |
| Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit H Wang, ZR Liu, HY Yoong, TR Paudel, JX Xiao, R Guo, WN Lin, P Yang, ... Nature communications 9 (1), 3319, 2018 | 114 | 2018 |
| Electrical switching of perpendicular magnetization in a single ferromagnetic layer L Liu, J Yu, R González-Hernández, C Li, J Deng, W Lin, C Zhou, T Zhou, ... Physical Review B 101 (22), 220402, 2020 | 112 | 2020 |
| Multi‐nonvolatile state resistive switching arising from ferroelectricity and oxygen vacancy migration W Lü, C Li, L Zheng, J Xiao, W Lin, Q Li, XR Wang, Z Huang, S Zeng, ... Advanced Materials 29 (24), 1606165, 2017 | 107 | 2017 |
| Electrostatic modulation of LaAlO 3/SrTiO 3 interface transport in an electric double-layer transistor WN Lin, JF Ding, SX Wu, YF Li, J Lourembam, S Shannigrahi, SJ Wang, ... Advanced Materials Interfaces 1 (1), 1300001, 2013 | 96 | 2013 |
| Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn J Zhou, X Wang, Y Liu, J Yu, H Fu, L Liu, S Chen, J Deng, W Lin, X Shu, ... Science advances 5 (5), eaau6696, 2019 | 86 | 2019 |
| Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3 d electrons W Lin, L Li, F Doğan, C Li, H Rotella, X Yu, B Zhang, Y Li, WS Lew, ... Nature communications 10 (1), 3052, 2019 | 83 | 2019 |
| Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer Q Xie#, W Lin#, B Yang#, X Shu, S Chen, L Liu, X Yu, MBH Breese, ... Advanced Materials 31 (21), 1900776, 2019 | 83 | 2019 |
| Current-induced self-switching of perpendicular magnetization in CoPt single layer L Liu, C Zhou, T Zhao, B Yao, J Zhou, X Shu, S Chen, S Shi, S Xi, D Lan, ... Nature Communications 13 (1), 3539, 2022 | 74 | 2022 |
| Spin–Orbit Torque‐Induced Domain Nucleation for Neuromorphic Computing J Zhou, T Zhao, X Shu, L Liu, W Lin, S Chen, S Shi, X Yan, X Liu, J Chen Advanced Materials 33 (36), 2103672, 2021 | 65 | 2021 |
| Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide Y Li, R Deng, W Lin, Y Tian, H Peng, J Yi, B Yao, T Wu Physical Review B—Condensed Matter and Materials Physics 87 (15), 155151, 2013 | 63 | 2013 |
| Photoinduced modulation and relaxation characteristics in LaAlO3/SrTiO3 heterointerface KX Jin, W Lin, BC Luo, T Wu Scientific reports 5, 8778, 2015 | 59 | 2015 |
| Free field electric switching of perpendicularly magnetized thin film by spin current gradient S Chen, J Yu, Q Xie, X Zhang, W Lin, L Liu, J Zhou, X Shu, R Guo, ... ACS applied materials & interfaces, 2019 | 58 | 2019 |
Jingsheng ChenProfessor, Department of Materials Science and Engineering, National University of SingaporeVerified email at nus.edu.sg