| Gallium nitride as an electromechanical material M Rais-Zadeh, VJ Gokhale, A Ansari, M Faucher, D Théron, Y Cordier, ... Journal of Microelectromechanical Systems 23 (6), 1252-1271, 2014 | 266 | 2014 |
| Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications F Semond, Y Cordier, N Grandjean, F Natali, B Damilano, S Vézian, ... physica status solidi (a) 188 (2), 501-510, 2001 | 209 | 2001 |
| InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage M Zaknoune, B Bonte, C Gaquiere, Y Cordier, Y Druelle, D Theron, ... IEEE Electron Device Letters 19 (9), 345-347, 1998 | 118 | 1998 |
| GaN transistor characteristics at elevated temperatures A Pérez-Tomás, M Placidi, N Baron, S Chenot, Y Cordier, JC Moreno, ... Journal of Applied Physics 106 (7), 2009 | 99 | 2009 |
| Power performance at 40 GHz of AlGaN/GaN high-electron mobility transistors grown by molecular beam epitaxy on Si (111) substrate P Altuntas, F Lecourt, A Cutivet, N Defrance, E Okada, M Lesecq, ... IEEE Electron Device Letters 36 (4), 303-305, 2015 | 89 | 2015 |
| Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ... Journal of Applied Physics 113 (17), 2013 | 85 | 2013 |
| AlGaN/GaN HEMTs on Si (111) with 6.6 W/mm output power density R Behtash, H Tobler, M Neuburger, A Schurr, H Leier, Y Cordier, ... Electronics Letters 39 (7), 626-627, 2003 | 84 | 2003 |
| Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy JM Chauveau, Y Androussi, A Lefebvre, J Di Persio, Y Cordier Journal of applied physics 93 (7), 4219-4225, 2003 | 81 | 2003 |
| Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons R Messina, JP Hugonin, JJ Greffet, F Marquier, Y De Wilde, A Belarouci, ... Physical Review B—Condensed Matter and Materials Physics 87 (8), 085421, 2013 | 80 | 2013 |
| Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz A Soltani, JC Gerbedoen, Y Cordier, D Ducatteau, M Rousseau, ... IEEE electron device letters 34 (4), 490-492, 2013 | 67 | 2013 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 2011 | 65 | 2011 |
| High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates A Minko, V Hoel, S Lepilliet, G Dambrine, JC De Jaeger, Y Cordier, ... IEEE Electron Device Letters 25 (4), 167-169, 2004 | 65 | 2004 |
| The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si (111) N Baron, Y Cordier, S Chenot, P Vennéguès, O Tottereau, M Leroux, ... Journal of Applied Physics 105 (3), 2009 | 64 | 2009 |
| Demonstration of AlGaN/GaN high-electron-mobility transistors grown by molecular beam epitaxy on Si (110) Y Cordier, JC Moreno, N Baron, E Frayssinet, S Chenot, B Damilano, ... IEEE electron device letters 29 (11), 1187-1189, 2008 | 62 | 2008 |
| AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si (1 1 1) Y Cordier, S Chenot, O Tottereau, M Zielinski, T Chassagne Journal of crystal growth 310 (20), 4417-4423, 2008 | 61 | 2008 |
| The indium content in metamorphic InxAl1− xAs/InxGa1− xAs HEMTs on GaAs substrate: a new structure parameter S Bollaert, Y Cordier, M Zaknoune, H Happy, V Hoel, S Lepilliet, D Théron, ... Solid-State Electronics 44 (6), 1021-1027, 2000 | 60 | 2000 |
| Role of magnetic polarons in ferromagnetic GdN F Natali, BJ Ruck, HJ Trodahl, DL Binh, S Vezian, B Damilano, Y Cordier, ... Physical Review B—Condensed Matter and Materials Physics 87 (3), 035202, 2013 | 59 | 2013 |
| Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition HPD Schenk, E Frayssinet, A Bavard, D Rondi, Y Cordier, M Kennard Journal of crystal growth 314 (1), 85-91, 2011 | 59 | 2011 |
| Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization P Win, Y Druelle, A Cappy, Y Cordier, J Favre, C Bouillet Applied physics letters 61 (8), 922-924, 1992 | 59 | 1992 |
| Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators M Faucher, B Grimbert, Y Cordier, N Baron, A Wilk, H Lahreche, P Bove, ... Applied Physics Letters 94 (23), 2009 | 57 | 2009 |