| Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions U Römer, R Peibst, T Ohrdes, B Lim, J Krügener, E Bugiel, T Wietler, ... Solar Energy Materials and Solar Cells 131, 85-91, 2014 | 274 | 2014 |
| Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon D Macdonald, F Rougieux, A Cuevas, B Lim, J Schmidt, M Di Sabatino, ... Journal of Applied Physics 105 (9), 093704, 2009 | 181 | 2009 |
| Ion implantation for poly-Si passivated back-junction back-contacted solar cells U Römer, R Peibst, T Ohrdes, B Lim, J Krügener, T Wietler, R Brendel IEEE Journal of Photovoltaics 5 (2), 507-514, 2015 | 171 | 2015 |
| A Simple Model Describing the Symmetric Characteristics of Polycrystalline Si/Monocrystalline Si, and Polycrystalline Si/Monocrystalline Si Junctions R Peibst, U Römer, KR Hofmann, B Lim, TF Wietler, J Krügener, ... IEEE Journal of Photovoltaics 4 (3), 841-850, 2014 | 137* | 2014 |
| Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits J Bauer, JM Wagner, A Lotnyk, H Blumtritt, B Lim, J Schmidt, ... physica status solidi (RRL)-Rapid Research Letters 3 (2‐3), 40-42, 2009 | 112 | 2009 |
| Generation and annihilation of boron–oxygen-related recombination centers in compensated p-and n-type silicon B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt American Institute of Physics (AIP), 2010 | 98 | 2010 |
| Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature B Lim, K Bothe, J Schmidt physica status solidi (RRL)-Rapid Research Letters 2 (3), 93-95, 2008 | 98 | 2008 |
| Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon DC Walter, B Lim, K Bothe, VV Voronkov, R Falster, J Schmidt Applied Physics Letters 104 (4), 042111, 2014 | 97 | 2014 |
| Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon VV Voronkov, R Falster, K Bothe, B Lim, J Schmidt journal of applied physics 110 (6), 063515, 2011 | 91 | 2011 |
| Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime AL Blum, JS Swirhun, RA Sinton, F Yan, S Herasimenka, T Roth, K Lauer, ... IEEE Journal of Photovoltaics 4 (1), 525-531, 2014 | 74 | 2014 |
| Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ... Journal of Applied Physics 108 (1), 013706, 2010 | 70 | 2010 |
| Recombination via point defects and their complexes in solar silicon AR Peaker, VP Markevich, B Hamilton, G Parada, A Dudas, A Pap, E Don, ... physica status solidi (a) 209 (10), 1884-1893, 2012 | 59 | 2012 |
| Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas Journal of Applied Physics 110 (6), 063708, 2011 | 50 | 2011 |
| Impact of oxygen on the permanent deactivation of boron–oxygen-related recombination centers in crystalline silicon B Lim, K Bothe, J Schmidt Journal of Applied Physics 107 (12), 123707, 2010 | 50 | 2010 |
| Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon B Lim, A Liu, D Macdonald, K Bothe, J Schmidt Applied Physics Letters 95 (23), 232109, 2009 | 50 | 2009 |
| Realistic efficiency potential of next‐generation industrial Czochralski‐grown silicon solar cells after deactivation of the boron–oxygen‐related defect center DC Walter, B Lim, J Schmidt Progress in Photovoltaics: Research and Applications, 2016 | 49 | 2016 |
| Lifetimes exceeding 1ms in 1-Ωcm boron-doped Cz-silicon DC Walter, B Lim, K Bothe, R Falster, VV Voronkov, J Schmidt Solar Energy Materials and Solar Cells 131, 51-57, 2014 | 45 | 2014 |
| Carrier mobilities in multicrystalline silicon wafers made from UMG‐Si B Lim, M Wolf, J Schmidt physica status solidi (c) 8 (3), 835-838, 2011 | 33 | 2011 |
| The impact of dopant compensation on the boron–oxygen defect in p‐and n‐type crystalline silicon D MacDonald, A Liu, A Cuevas, B Lim, J Schmidt Physica status solidi (a) 208 (3), 559-563, 2011 | 32 | 2011 |
| Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process B Lim, VV Voronkov, R Falster, K Bothe, J Schmidt Applied Physics Letters 98 (16), 162104, 2011 | 31 | 2011 |
