| Control of quantum-confined stark effect in InGaN-based quantum wells JH Ryou, PD Yoder, J Liu, Z Lochner, H Kim, S Choi, HJ Kim, RD Dupuis IEEE journal of selected topics in quantum electronics 15 (4), 1080-1091, 2009 | 317 | 2009 |
| Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates Wang, Song, P Li, JH Ryou, RD Dupuis, CJ Summers, ZL Wang Journal of the American Chemical Society 127 (21), 7920-7923, 2005 | 303 | 2005 |
| New insight into Ni‐rich layered structure for next‐generation Li rechargeable batteries W Lee, S Muhammad, T Kim, H Kim, E Lee, M Jeong, S Son, JH Ryou, ... Advanced Energy Materials 8 (4), 1701788, 2018 | 279 | 2018 |
| Ordered nanowire array blue/near‐UV light emitting diodes S Xu, C Xu, Y Liu, Y Hu, R Yang, Q Yang, JH Ryou, HJ Kim, Z Lochner, ... Advanced materials 22 (42), 4749-4753, 2010 | 262 | 2010 |
| Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer S Choi, HJ Kim, SS Kim, J Liu, J Kim, JH Ryou, RD Dupuis, AM Fischer, ... Applied Physics Letters 96 (22), 2010 | 248 | 2010 |
| Barrier effect on hole transport and carrier distribution in InGaN∕ GaN multiple quantum well visible light-emitting diodes JP Liu, JH Ryou, RD Dupuis, J Han, GD Shen, HB Wang Applied physics letters 93 (2), 2008 | 201 | 2008 |
| Photonic crystal nanobeam lasers Y Zhang, M Khan, Y Huang, J Ryou, P Deotare, R Dupuis, M Lončar Applied physics letters 97 (5), 2010 | 155 | 2010 |
| Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications Wang, J Song, CJ Summers, JH Ryou, P Li, RD Dupuis, ZL Wang The Journal of Physical Chemistry B 110 (15), 7720-7724, 2006 | 144 | 2006 |
| GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ... Applied physics letters 89 (1), 2006 | 140 | 2006 |
| Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes HJ Kim, S Choi, SS Kim, JH Ryou, PD Yoder, RD Dupuis, AM Fischer, ... Applied Physics Letters 96 (10), 2010 | 119 | 2010 |
| Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator J Chen, SK Oh, N Nabulsi, H Johnson, W Wang, JH Ryou Nano Energy 57, 670-679, 2019 | 118 | 2019 |
| Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD SC Shen, Y Zhang, D Yoo, JB Limb, JH Ryou, PD Yoder, RD Dupuis IEEE Photonics Technology Letters 19 (21), 1744-1746, 2007 | 107 | 2007 |
| Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, M Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 102 (10), 2013 | 98 | 2013 |
| Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers S Choi, MH Ji, J Kim, H Jin Kim, MM Satter, PD Yoder, JH Ryou, ... Applied Physics Letters 101 (16), 2012 | 98 | 2012 |
| High durable, biocompatible, and flexible piezoelectric pulse sensor using single‐crystalline III‐N thin film J Chen, H Liu, W Wang, N Nabulsi, W Zhao, JY Kim, MK Kwon, JH Ryou Advanced Functional Materials 29 (37), 1903162, 2019 | 97 | 2019 |
| Low-noise GaN ultraviolet pin photodiodes on GaN substrates Y Zhang, SC Shen, HJ Kim, S Choi, JH Ryou, RD Dupuis, B Narayan Applied Physics Letters 94 (22), 2009 | 95 | 2009 |
| Electrical characteristics of contacts to thin film N-polar n-type GaN H Kim, JH Ryou, RD Dupuis, SN Lee, Y Park, JW Jeon, TY Seong Applied Physics Letters 93 (19), 2008 | 90 | 2008 |
| Nanostructured-NiO/Si heterojunction photodetector B Parida, S Kim, M Oh, S Jung, M Baek, JH Ryou, H Kim Materials science in Semiconductor Processing 71, 29-34, 2017 | 83 | 2017 |
| Control of quantum-confined Stark effect in InGaN∕ GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes JH Ryou, W Lee, J Limb, D Yoo, JP Liu, RD Dupuis, ZH Wu, AM Fischer, ... Applied Physics Letters 92 (10), 2008 | 83 | 2008 |
| Piezoelectric pressure sensor based on flexible gallium nitride thin film for harsh-environment and high-temperature applications NI Kim, YL Chang, J Chen, T Barbee, W Wang, JY Kim, MK Kwon, ... Sensors and Actuators A: Physical 305, 111940, 2020 | 82 | 2020 |
Shyh-Chiang ShenProfessor, Electrical and Computer Engineering, Georgia Institute of TechnologyVerified email at ece.gatech.edu
