| Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation G Hubert, L Artola, D Regis Integration 50, 39-47, 2015 | 137 | 2015 |
| Impact of the radial ionization profile on SEE prediction for SOI transistors and SRAMs beyond the 32-nm technological node M Raine, G Hubert, M Gaillardin, L Artola, P Paillet, S Girard, ... IEEE Transactions on Nuclear Science 58 (3), 840-847, 2011 | 115 | 2011 |
| Modeling single event transients in advanced devices and ICs L Artola, M Gaillardin, G Hubert, M Raine, P Paillet IEEE Transactions on Nuclear Science 62 (4), 1528-1539, 2015 | 101 | 2015 |
| Single-event transient modeling in a 65-nm bulk CMOS technology based on multi-physical approach and electrical simulations G Hubert, L Artola IEEE Transactions on Nuclear Science 60 (6), 4421-4429, 2013 | 83 | 2013 |
| SEU prediction from SET modeling using multi-node collection in bulk transistors and SRAMs down to the 65 nm technology node L Artola, G Hubert, KM Warren, M Gaillardin, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 58 (3), 1338-1346, 2011 | 77 | 2011 |
| Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET SK Mohapatra, KP Pradhan, L Artola, PK Sahu Materials Science in Semiconductor Processing 31, 455-462, 2015 | 61 | 2015 |
| Analyzing the influence of the angles of incidence and rotation on MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA J Tonfat, FL Kastensmidt, L Artola, G Hubert, NH Medina, N Added, ... IEEE Transactions on Nuclear Science 64 (8), 2161-2168, 2017 | 52* | 2017 |
| Continuous high-altitude measurements of cosmic ray neutrons and SEU/MCU at various locations: correlation and analyses based on MUSCA SEP3 G Hubert, R Velazco, CA Federico, A Cheminet, CS Cardenas, LV Caldas, ... Proc. of Radiation Effects on Components and Systems (RADECS'12), 2012 | 50 | 2012 |
| Collected charge analysis for a new transient model by TCAD simulation in 90 nm technology L Artola, G Hubert, S Duzellier, F Bezerra IEEE Transactions on Nuclear Science 57 (4), 1869-1875, 2010 | 48 | 2010 |
| Modeling of radiation-induced single event transients in SOI FinFETS L Artola, G Hubert, RD Schrimpf 2013 IEEE international reliability physics symposium (irps), SE. 1.1-SE. 1.6, 2013 | 47 | 2013 |
| Effect of the radial ionization profile of proton on SEU sensitivity of nanoscale SRAMs G Hubert, PL Cavoli, C Federico, L Artola, J Busto IEEE Transactions on Nuclear Science 62 (6), 2837-2845, 2015 | 32 | 2015 |
| Impact of different transistor arrangements on gate variability AL Zimpeck, C Meinhardt, L Artola, G Hubert, FL Kastensmidt, RAL Reis Microelectronics Reliability 88, 111-115, 2018 | 30 | 2018 |
| In flight SEU/MCU sensitivity of commercial nanometric SRAMs: Operational estimations L Artola, R Velazco, G Hubert, S Duzellier, T Nuns, B Guerard, ... IEEE Transactions on Nuclear Science 58 (6), 2644-2651, 2011 | 30 | 2011 |
| Single-event latchup modeling based on coupled physical and electrical transient simulations in CMOS technology L Artola, G Hubert, T Rousselin IEEE Transactions on Nuclear Science 61 (6), 3543-3549, 2014 | 29 | 2014 |
| Comparative soft error evaluation of layout cells in FinFET technology L Artola, G Hubert, M Alioto Microelectronics Reliability 54 (9-10), 2300-2305, 2014 | 29 | 2014 |
| Physical mechanisms inducing electron single-event upset P Caron, C Inguimbert, L Artola, N Chatry, N Sukhaseum, R Ecoffet, ... IEEE Transactions on Nuclear Science 65 (8), 1759-1767, 2018 | 28 | 2018 |
| Physical mechanisms of proton-induced single-event upset in integrated memory devices P Caron, C Inguimbert, L Artola, R Ecoffet, F Bezerra IEEE Transactions on Nuclear Science 66 (7), 1404-1409, 2019 | 27 | 2019 |
| Investigation of electrical latchup and SEL mechanisms at low temperature for applications down to 50 K A Al Youssef, L Artola, S Ducret, G Hubert, F Perrier IEEE transactions on nuclear science 64 (8), 2089-2097, 2017 | 26* | 2017 |
| Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology YQ De Aguiar, L Artola, G Hubert, C Meinhardt, FL Kastensmidt, RAL Reis Microelectronics Reliability 76, 660-664, 2017 | 25 | 2017 |
| Analysis of Angular Dependence of Single-Event Latchup Sensitivity for Heavy-Ion Irradiations of CMOS Technology L Artola, NJH Roche, G Hubert, A Al Youssef, A Khachatrian, P McMarr, ... IEEE Transactions on Nuclear Science 62 (6), 2539-2546, 2015 | 24 | 2015 |
Guillaume HubertONERA, the French Aerospace Lab.Verified email at onera.fr