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Fahad Al Mamun
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Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling
NH Patoary, J Xie, G Zhou, F Al Mamun, M Sayyad, S Tongay, IS Esqueda
Scientific reports 13 (1), 3304, 2023
262023
Cryogenic characterization and analysis of nanoscale SOI FETs using a virtual source model
G Zhou, F Al Mamun, J Yang-Scharlotta, D Vasileska, IS Esqueda
IEEE Transactions on Electron Devices 69 (3), 1306-1312, 2022
192022
Impact of back-gate biasing on the transport properties of 22 nm FD-SOI MOSFETs at cryogenic temperatures
F Al Mamun, D Vasileska, IS Esqueda
IEEE Transactions on Electron Devices 69 (10), 5417-5423, 2022
132022
Trapping effects on charge transport in graphene field-effect transistors with high-K gate dielectrics
G Zhou, NH Patoary, J Xie, FA Mamun, I Sanchez Esqueda
Journal of Applied Physics 134 (14), 2023
22023
Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays
G Bourgeois, V Meli, F Al Mamun, F Mazen, E Nolot, E Martinez, ...
Microelectronics Reliability 126, 114221, 2021
22021
A Comparative Study of Electrical Properties of Si and ZnO Gate-all-around Nanowire FET
SZ Reza, MS Islam, F Al Mamun
International Journal of Engineering Inventions, 58-66, 2017
22017
Evidence of transport degradation in 22 nm FD-SOI charge trapping transistors for neural network applications
F Al Mamun, S Vrudhula, D Vasileska, H Barnaby, IS Esqueda
Solid-State Electronics 209, 108783, 2023
12023
TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices
J Neuendank, F Al Mamun, H Barnaby, S Bonaldo, M Spear, T Wallace, ...
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2023
12023
Radiation-induced Enhancement of Scattering Effects in FD-SOI MOSFETs
M Spear, F Al Mamun, J Solano, HJ Barnaby, IS Esqueda
2022 22nd European Conference on Radiation and Its Effects on Components and …, 2022
12022
Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs
NH Patoary, FA Mamun, J Xie, T Grasser, I Sanchez Esqueda
Advanced Electronic Materials 10 (11), 2400152, 2024
2024
Characterization, Analysis, and Modeling of 22nm FD-SOI Technology for Cryogenic Computing and Charge Trap Memory
F Al Mamun
Arizona State University, 2024
2024
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