Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling NH Patoary, J Xie, G Zhou, F Al Mamun, M Sayyad, S Tongay, IS Esqueda Scientific reports 13 (1), 3304, 2023 | 26 | 2023 |
Cryogenic characterization and analysis of nanoscale SOI FETs using a virtual source model G Zhou, F Al Mamun, J Yang-Scharlotta, D Vasileska, IS Esqueda IEEE Transactions on Electron Devices 69 (3), 1306-1312, 2022 | 19 | 2022 |
Impact of back-gate biasing on the transport properties of 22 nm FD-SOI MOSFETs at cryogenic temperatures F Al Mamun, D Vasileska, IS Esqueda IEEE Transactions on Electron Devices 69 (10), 5417-5423, 2022 | 13 | 2022 |
Trapping effects on charge transport in graphene field-effect transistors with high-K gate dielectrics G Zhou, NH Patoary, J Xie, FA Mamun, I Sanchez Esqueda Journal of Applied Physics 134 (14), 2023 | 2 | 2023 |
Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays G Bourgeois, V Meli, F Al Mamun, F Mazen, E Nolot, E Martinez, ... Microelectronics Reliability 126, 114221, 2021 | 2 | 2021 |
A Comparative Study of Electrical Properties of Si and ZnO Gate-all-around Nanowire FET SZ Reza, MS Islam, F Al Mamun International Journal of Engineering Inventions, 58-66, 2017 | 2 | 2017 |
Evidence of transport degradation in 22 nm FD-SOI charge trapping transistors for neural network applications F Al Mamun, S Vrudhula, D Vasileska, H Barnaby, IS Esqueda Solid-State Electronics 209, 108783, 2023 | 1 | 2023 |
TID Effects on Random Telegraph Signals in Bulk 90 nm MOSFET Devices J Neuendank, F Al Mamun, H Barnaby, S Bonaldo, M Spear, T Wallace, ... 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2023 | 1 | 2023 |
Radiation-induced Enhancement of Scattering Effects in FD-SOI MOSFETs M Spear, F Al Mamun, J Solano, HJ Barnaby, IS Esqueda 2022 22nd European Conference on Radiation and Its Effects on Components and …, 2022 | 1 | 2022 |
Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs NH Patoary, FA Mamun, J Xie, T Grasser, I Sanchez Esqueda Advanced Electronic Materials 10 (11), 2400152, 2024 | | 2024 |
Characterization, Analysis, and Modeling of 22nm FD-SOI Technology for Cryogenic Computing and Charge Trap Memory F Al Mamun Arizona State University, 2024 | | 2024 |