Backside SEU laser testing for commercial off-the-shelf SRAMs F Darracq, H Lapuyade, N Buard, F Mounsi, B Foucher, P Fouillat, ... IEEE Transactions on Nuclear Science 49 (6), 2977-2983, 2002 | 79 | 2002 |
Influence of laser pulse duration in single event upset testing A Douin, V Pouget, F Darracq, D Lewis, P Fouillat, P Perdu 2005 8th European Conference on Radiation and Its Effects on Components and …, 2005 | 72 | 2005 |
Terahertz imaging and tomography as efficient instruments for testing polymer additive manufacturing objects JB Perraud, AF Obaton, J Bou-Sleiman, B Recur, H Balacey, F Darracq, ... Applied optics 55 (13), 3462-3467, 2016 | 63 | 2016 |
Art painting diagnostic before restoration with terahertz and millimeter waves JP Guillet, M Roux, K Wang, X Ma, F Fauquet, H Balacey, B Recur, ... Journal of Infrared, Millimeter, and Terahertz Waves 38, 369-379, 2017 | 62 | 2017 |
Investigation on the SEL sensitive depth of an SRAM using linear and two-photon absorption laser testing E Faraud, V Pouget, K Shao, C Larue, F Darracq, D Lewis, A Samaras, ... IEEE Transactions on Nuclear Science 58 (6), 2637-2643, 2011 | 50 | 2011 |
Laser cross section measurement for the evaluation of single-event effects in integrated circuits V Pouget, P Fouillat, D Lewis, H Lapuyade, F Darracq, A Touboul Microelectronics Reliability 40 (8-10), 1371-1375, 2000 | 36 | 2000 |
Evaluation of recent technologies of non-volatile RAM T Nuns, S Duzellier, J Bertrand, G Hubert, V Pouget, F Darracq, JP David, ... 2007 9th European Conference on Radiation and Its Effects on Components and …, 2007 | 32 | 2007 |
Fundamentals of the pulsed laser technique for single-event upset testing P Fouillat, V Pouget, D McMorrow, F Darracq, S Buchner, D Lewis Radiation Effects on Embedded Systems, 121-141, 2007 | 29 | 2007 |
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices K Mukherjee, F Darracq, A Curutchet, N Malbert, N Labat Microelectronics Reliability 76, 350-356, 2017 | 26 | 2017 |
THE HARDNESS-INTENSITY CORRELATION IN BRIGHT GAMMA-RAY BURSTS AK J.-P. Dezalay, J.-L. Atteia, C. Barat, M. Boer, F. Darracq, P. Goupil, M ... The Astrophysical Journal 490 (1), L17-L20, 1997 | 26 | 1997 |
Single-event sensitivity of a single SRAM cell F Darracq, T Beauchene, V Pouget, H Lapuyade, D Lewis, P Fouillat, ... IEEE Transactions on Nuclear Science 49 (3), 1486-1490, 2002 | 24 | 2002 |
Characterization and modeling of laser-induced single-event burn-out in SiC power diodes N Mbaye, V Pouget, F Darracq, D Lewis Microelectronics Reliability 53 (9-11), 1315-1319, 2013 | 21 | 2013 |
Low-frequency noise effect on terahertz tomography using thermal detectors JP Guillet, B Recur, H Balacey, J Bou Sleiman, F Darracq, D Lewis, ... Applied optics 54 (22), 6758-6762, 2015 | 15 | 2015 |
Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell I El Moukhtari, V Pouget, C Larue, F Darracq, D Lewis, P Perdu Microelectronics Reliability 53 (9-11), 1325-1328, 2013 | 15 | 2013 |
Investigation on the single event burnout sensitive volume using two-photon absorption laser testing F Darracq, N Mbaye, S Azzopardi, V Pouget, E Lorfevre, F Bezerra, ... IEEE Transactions on Nuclear Science 59 (4), 999-1006, 2012 | 12 | 2012 |
Imaging the single event burnout sensitive volume of vertical power MOSFETs using the laser two-photon absorption technique F Darracq, N Mbaye, C Larue, V Pouget, S Azzopardi, E Lorfevre, ... 2011 12th European Conference on Radiation and Its Effects on Components and …, 2011 | 12 | 2011 |
Investigation of single event burnout sensitive depth in power MOSFETS F Darracq, V Pouget, D Lewis, P Fouillat, E Lorfevre, R Ecoffet, F Bezerra 2009 European Conference on Radiation and Its Effects on Components and …, 2009 | 12 | 2009 |
A non-linear model to express laser-induced SRAM cross-sections versus an effective laser LET F Darracq, H Lapuyade, V Pouget, P Fouillat Radiation and its Effects on Components and Systems, RADECS 2003 …, 2004 | 12 | 2004 |
Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption I El Moukhtari, V Pouget, F Darracq, C Larue, D Lewis, P Perdu 2013 14th European Conference on Radiation and Its Effects on Components and …, 2013 | 11 | 2013 |
Optimizing pulsed OBIC technique for ESD defect localization F Essely, N Guitard, F Darracq, V Pouget, M Bafleur, P Perdu, A Touboul, ... IEEE Transactions on Device and Materials Reliability 7 (4), 617-624, 2007 | 11 | 2007 |