| Progress toward development of all-printed RFID tags: materials, processes, and devices V Subramanian, JMJ Fréchet, PC Chang, DC Huang, JB Lee, SE Molesa, ... Proceedings of the IEEE 93 (7), 1330-1338, 2005 | 674 | 2005 |
| Hybrid CMOS Technology With Nanowire Devices and Double Gated Planar Devices S Bangsaruntip, JB Chang, L Chang, JW Sleight US Patent 20,130,026,451, 2013 | 443 | 2013 |
| Finfet Parasitic Capacitance Reduction Using Air Gap T Ando, JB Chang, SK Kanakasabapathy, P Kulkarni, TE Standaert, ... US Patent 20,130,095,629, 2013 | 337 | 2013 |
| Printed organic transistors for ultra-low-cost RFID applications V Subramanian, PC Chang, JB Lee, SE Molesa, SK Volkman IEEE international conference on polymers and adhesives in microelectronics …, 2004 | 331 | 2004 |
| Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, ... 2010 Symposium on VLSI Technology Digest of papers, 21-22, 2010 | 322 | 2010 |
| Printed organic transistors for ultra-low-cost RFID applications V Subramanian, PC Chang, JB Lee, SE Molesa, SK Volkman IEEE Transactions on components and packaging technologies 28 (4), 742-747, 2005 | 320 | 2005 |
| Improved superconducting qubit coherence using titanium nitride JB Chang, MR Vissers, AD Córcoles, M Sandberg, J Gao, DW Abraham, ... Applied Physics Letters 103, 012602, 2013 | 281 | 2013 |
| Organic thin film transistors from a soluble oligothiophene derivative containing thermally removable solubilizing groups AR Murphy, JMJ Fréchet, P Chang, J Lee, V Subramanian Journal of the American Chemical Society 126 (6), 1596-1597, 2004 | 268 | 2004 |
| Fin field effect transistor devices with self-aligned source and drain regions JB Chang, MA Guillorn, W Haensch, KL Saenger US Patent 7,923,337, 2011 | 254 | 2011 |
| FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE AND DRAIN REGIONS JB Chang, M Guillorn, WE Haensch, KL Saenger EP Patent 2,168,151, 2010 | 254 | 2010 |
| Printable polythiophene gas sensor array for low-cost electronic noses JB Chang, V Liu, V Subramanian, K Sivula, C Luscombe, A Murphy, J Liu, ... Journal of Applied Physics 100 (1), 2006 | 238 | 2006 |
| Printed electronics for low-cost electronic systems: Technology status and application development V Subramanian, JB Chang, A de la Fuente Vornbrock, DC Huang, ... Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European, 17-24, 2008 | 213 | 2008 |
| Fin field effect transistor devices with self-aligned source and drain regions JB Chang, MA Guillorn, W Haensch, KL Saenger US Patent 8,592,280, 2013 | 206 | 2013 |
| Fin-Last Replacement Metal Gate FinFET JB Chang, MA Guillom, WE Haensch, IBM Corporation US Patent 20,120,313,170, 2012 | 192* | 2012 |
| Single gate inverter nanowire mesh J Chang, P Chang, MA Guillorn, J Sleight US Patent 8,466,451, 0 | 192* | |
| Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond H Kawasaki, VS Basker, T Yamashita, CH Lin, Y Zhu, J Faltermeier, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 189 | 2009 |
| Nanowire mesh device and method of fabricating same SW Bedell, JB Chang, P Chang, MA Guillorn, JW Sleight US Patent 7,893,492, 2011 | 181 | 2011 |
| Weave patterned organic transistors on fiber for E-textiles JB Lee, V Subramanian IEEE Transactions on Electron Devices 52 (2), 269-275, 2005 | 173 | 2005 |
| Single gate inverter nanowire mesh J Chang, P Chang, MA Guillorn, J Sleight US Patent 8,084,308, 2011 | 169 | 2011 |
| A NANOMESH SRAM CELL J CHANG, P CHANG, M GUILLORN, J SLEIGHT WO Patent 2,011,015,440, 2011 | 140 | 2011 |
Jeffrey SleightIBMVerified email at us.ibm.com