| AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ... IEEE Electron Device Letters 22 (10), 457-459, 2001 | 619 | 2001 |
| Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors H Marchand, L Zhao, N Zhang, B Moran, R Coffie, UK Mishra, JS Speck, ... Journal of Applied Physics 89 (12), 7846-7851, 2001 | 248 | 2001 |
| Insulated gate e-mode transistors CS Suh, I Ben-Yaacov, R Coffie, U Mishra US Patent 7,851,825, 2010 | 241 | 2010 |
| Enhancement Mode III-N HEMTs U Mishra, R Coffie, L Shen, I Ben-Yaacov, P Parikh US Patent 8,519,438, 2013 | 232 | 2013 |
| Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys D Jena, S Heikman, D Green, D Buttari, R Coffie, H Xing, S Keller, ... Applied physics letters 81 (23), 4395-4397, 2002 | 220 | 2002 |
| 12W/mm power density AlGaN/GaN HEMTs on sapphire substrate A Chini, D Buttari, R Coffie, S Heikman, S Keller, UK Mishra Electronics Letters 40 (1), 1, 2004 | 201 | 2004 |
| Gallium nitride based transistors H Xing, S Keller, YF Wu, L McCarthy, IP Smorchkova, D Buttari, R Coffie, ... Journal of Physics: Condensed Matter 13 (32), 7139, 2001 | 173 | 2001 |
| Semiconductor devices with field plates R Chu, R Coffie US Patent 8,390,000, 2013 | 156 | 2013 |
| High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation L Shen, R Coffie, D Buttari, S Heikman, A Chakraborty, A Chini, S Keller, ... IEEE Electron Device Letters 25 (1), 7-9, 2004 | 142 | 2004 |
| Origin of etch delay time in dry etching of AlGaN/GaN structures D Buttari, A Chini, T Palacios, R Coffie, L Shen, H Xing, S Heikman, ... Applied physics letters 83 (23), 4779-4781, 2003 | 134 | 2003 |
| Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs A Chini, D Buttari, R Coffie, L Shen, S Heikman, A Chakraborty, S Keller, ... IEEE Electron Device Letters 25 (5), 229-231, 2004 | 131 | 2004 |
| Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs D Buttari, A Chini, G Meneghesso, E Zanoni, B Moran, S Heikman, ... IEEE Electron device letters 23 (2), 76-78, 2002 | 90 | 2002 |
| 2.1 A/mm current density AlGaN/GaN HEMT A Chini, R Coffie, G Meneghesso, E Zanoni, D Buttari, S Heikman, ... Electronics letters 39 (7), 1, 2003 | 86 | 2003 |
| High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology V Paidi, S Xie, R Coffie, B Moran, S Heikman, S Keller, A Chini, ... IEEE Transactions on Microwave Theory and Techniques 51 (2), 643-652, 2003 | 84 | 2003 |
| High power semiconductor electronic components with increased reliability RK Lal, R Coffie, Y Wu, P Parikh, Y Dora, U Mishra, S Chowdhury, ... US Patent 8,598,937, 2013 | 82 | 2013 |
| P-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) R Coffie, D Buttari, S Heikman, S Keller, A Chini, L Shen, UK Mishra IEEE Electron Device Letters 23 (10), 588-590, 2002 | 82 | 2002 |
| Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN S Heikman, S Keller, B Moran, R Coffie, SP DenBaars, UK Mishra physica status solidi (a) 188 (1), 355-358, 2001 | 74 | 2001 |
| Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs D Buttari, A Chini, G Meneghesso, E Zanoni, P Chavarkar, R Coffie, ... IEEE Electron Device Letters 23 (3), 118-120, 2002 | 53 | 2002 |
| Semiconductor electronic components and circuits P Parikh, J Honea, CC Blake, R Coffie, Y Wu, U Mishra US Patent 8,624,662, 2014 | 50 | 2014 |
| Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies fT>60 GHz CH Chen, R Coffie, K Krishnamurthy, S Keller, M Rodwell, UK Mishra IEEE Electron Device Letters 21 (12), 549-551, 2000 | 49 | 2000 |