| Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C Z Cheng, X Ji, Z Huang, Y Ohno, K Inoue, Y Nagai, Y Sakaida, H Uratani, ... arXiv preprint arXiv:2404.09120, 2024 | 1 | 2024 |
| Interfacial reaction boosts thermal conductance of room‐temperature integrated semiconductor interfaces stable up to 1100° C X Ji, Z Huang, Y Ohno, K Inoue, Y Nagai, Y Sakaida, H Uratani, J Sun, ... Advanced Electronic Materials, 2400387, 2024 | 1 | 2024 |
| (Ultra) wide bandgap semiconductor heterostructures for electronics cooling Z Cheng, Z Huang, J Sun, J Wang, T Feng, K Ohnishi, J Liang, H Amano, ... Applied Physics Reviews 11 (4), 2024 | | 2024 |
| Thermal Conductivity of Cubic Silicon Carbide Single Crystals Heavily Doped by Nitrogen Z Huang, Y Yang, D Sheng, H Li, Y Wang, Z Sun, M Li, R Wang, R Huang, ... arXiv preprint arXiv:2409.18843, 2024 | | 2024 |
