| Recent progress in 2D group-VA semiconductors: from theory to experiment S Zhang, S Guo, Z Chen, Y Wang, H Gao, J Gómez-Herrero, P Ares, ... Chemical Society Reviews 47 (3), 982-1021, 2018 | 820 | 2018 |
| 2D V‐V binary materials: status and challenges S Guo, Y Zhang, Y Ge, S Zhang, H Zeng, H Zhang Advanced Materials 31 (39), 1902352, 2019 | 344 | 2019 |
| Few-layer antimonene: anisotropic expansion and reversible crystalline-phase evolution enable large-capacity and long-life Na-ion batteries W Tian, S Zhang, C Huo, D Zhu, Q Li, L Wang, X Ren, L Xie, S Guo, ... ACS Nano 12 (2), 1887-1893, 2018 | 202 | 2018 |
| Advances of 2D bismuth in energy sciences X Liu, S Zhang, S Guo, B Cai, SA Yang, F Shan, M Pumera, H Zeng Chemical Society Reviews 49 (1), 263-285, 2020 | 169 | 2020 |
| Ultrathin bismuth nanosheets for stable Na-ion batteries: clarification of structure and phase transition by in situ observation Y Huang, C Zhu, S Zhang, X Hu, K Zhang, W Zhou, S Guo, F Xu, H Zeng Nano Letters 19 (2), 1118-1123, 2019 | 148 | 2019 |
| Two-dimensional SiP: an unexplored direct band-gap semiconductor S Zhang, S Guo, Y Huang, Z Zhu, B Cai, M Xie, W Zhou, H Zeng 2D Materials 4 (1), 015030, 2016 | 107 | 2016 |
| Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy S Guo, Z Zhu, X Hu, W Zhou, X Song, S Zhang, K Zhang, H Zeng Nanoscale 10 (18), 8397-8403, 2018 | 93 | 2018 |
| Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional W Zhou, S Zhang, S Guo, Y Wang, J Lu, X Ming, Z Li, H Qu, H Zeng Physical Review Applied 13 (4), 044066, 2020 | 90 | 2020 |
| Anisotropic in‐plane ballistic transport in monolayer black arsenic‐phosphorus fets W Zhou, S Zhang, Y Wang, S Guo, H Qu, P Bai, Z Li, H Zeng Advanced Electronic Materials 6 (3), 1901281, 2020 | 81 | 2020 |
| A class of Pb-free double perovskite halide semiconductors with intrinsic ferromagnetism, large spin splitting and high Curie temperature B Cai, X Chen, M Xie, S Zhang, X Liu, J Yang, W Zhou, S Guo, H Zeng Materials Horizons 5 (5), 961-968, 2018 | 77 | 2018 |
| Identifying electrocatalytic activity and mechanism of Ce1/3NbO3 perovskite for nitrogen reduction to ammonia at ambient conditions X Hu, Y Sun, S Guo, J Sun, Y Fu, S Chen, S Zhang, J Zhu Applied Catalysis B: Environmental 280, 119419, 2021 | 74 | 2021 |
| First-principles study of SO2 sensors based on phosphorene and its isoelectronic counterparts: GeS, GeSe, SnS, SnSe S Guo, L Yuan, X Liu, W Zhou, X Song, S Zhang Chemical Physics Letters 686, 83-87, 2017 | 64 | 2017 |
| A safe and efficient liquid-solid synthesis for copper azide films with excellent electrostatic stability C Yu, W Zhang, S Guo, B Hu, Z Zheng, J Ye, S Zhang, J Zhu Nano energy 66, 104135, 2019 | 63 | 2019 |
| A highly sensitive and selective SnS2 monolayer sensor in detecting SF6 decomposition gas S Guo, X Hu, Y Huang, W Zhou, H Qu, L Xu, X Song, S Zhang, H Zeng Applied Surface Science 541, 148494, 2021 | 61 | 2021 |
| Tailoring natural layered β-phase antimony into few layer antimonene for Li storage with high rate capabilities Y Gao, W Tian, C Huo, K Zhang, S Guo, S Zhang, X Song, L Jiang, K Huo, ... Journal of Materials Chemistry A 7 (7), 3238-3243, 2019 | 60 | 2019 |
| Two-dimensional transition metal diborides: promising Dirac electrocatalysts with large reaction regions toward efficient N 2 fixation X Hu, S Guo, S Zhang, X Guo, Y Li, S Huang, K Zhang, J Zhu Journal of Materials Chemistry A 7 (45), 25887-25893, 2019 | 51 | 2019 |
| Two-dimensional pnictogen for field-effect transistors W Zhou, J Chen, P Bai, S Guo, S Zhang, X Song, L Tao, H Zeng Research 2019, 1046329, 2019 | 48 | 2019 |
| Mechanistic understanding of two-dimensional phosphorus, arsenic, and antimony high-capacity anodes for fast-charging lithium/sodium ion batteries S Guo, X Hu, W Zhou, X Liu, Y Gao, S Zhang, K Zhang, Z Zhu, H Zeng The Journal of Physical Chemistry C 122 (51), 29559-29566, 2018 | 47 | 2018 |
| Uncovering the anisotropic electronic structure of 2D group VA-VA monolayers for quantum transport H Qu, S Guo, W Zhou, S Zhang IEEE Electron Device Letters 42 (1), 66-69, 2020 | 42 | 2020 |
| DFT coupled with NEGF study of a promising two-dimensional channel material: black phosphorene-type GaTeCl W Zhou, S Guo, S Zhang, Z Zhu, X Song, T Niu, K Zhang, X Liu, Y Zou, ... Nanoscale 10 (7), 3350-3355, 2018 | 41 | 2018 |
Shengli ZhangNanjing University of Science and TechnologyVerified email at njust.edu.cn