| Stable organic thin-film transistors X Jia, C Fuentes-Hernandez, CY Wang, Y Park, B Kippelen Science advances 4 (1), eaao1705, 2018 | 129 | 2018 |
| 0.34AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal HS Lee, DY Jung, Y Park, J Na, HG Jang, HS Lee, CH Jun, J Park, ... IEEE Electron Device Letters 36 (11), 1132-1134, 2015 | 53 | 2015 |
| Skin-like low-noise elastomeric organic photodiodes Y Park, C Fuentes-Hernandez, K Kim, WF Chou, FA Larrain, S Graham, ... Science Advances 7 (51), eabj6565, 2021 | 49 | 2021 |
| X-to-K band broadband watt-level power amplifier using stacked-FET unit cells Y Park, Y Kim, W Choi, J Woo, Y Kwon 2011 IEEE Radio Frequency Integrated Circuits Symposium, 1-4, 2011 | 33 | 2011 |
| 60 GHz broadband image rejection receiver using varactor tuning J Kim, W Choi, Y Park, Y Kwon 2010 IEEE Radio Frequency Integrated Circuits Symposium, 381-384, 2010 | 26 | 2010 |
| Semiconductor device and method of fabricating the same CH Jun, SC Ko, SH Moon, W Chang, BAE Sung-Bum, YR Park, JH Na, ... US Patent 9,337,121, 2016 | 24 | 2016 |
| Low onset voltage of GaN on Si Schottky barrier diode using various recess depths Y Park, JJ Kim, W Chang, HG Jang, J Na, H Lee, CH Jun, H Cha, JK Mun, ... Electronics letters 50 (16), 1164-1165, 2014 | 23 | 2014 |
| Measurements of the field-effect electron mobility of the acceptor ITIC Y Park, C Fuentes-Hernandez, X Jia, FA Larrain, J Zhang, SR Marder, ... Organic Electronics 58, 290-293, 2018 | 18 | 2018 |
| Design and evaluation of cascode GaN FET for switching power conversion systems DY Jung, Y Park, HS Lee, CH Jun, HG Jang, J Park, M Kim, SC Ko, ... ETRI Journal 39 (1), 62-68, 2017 | 18 | 2017 |
| Semiconductor device and method of manufacturing the same SC Ko, JK Mun, BG Min, YR Park, H Ahn, JJ Kim, ES Nam US Patent 9,136,396, 2015 | 16 | 2015 |
| Compact 10∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits W Chang, YR Park, JK Mun, SC Ko, GI Jeon 2014 9th European Microwave Integrated Circuit Conference, 516-519, 2014 | 16 | 2014 |
| X-band low noise amplifier MMIC using AlGaN/GaN HEMT technology on SiC substrate W Chang, GI Jeon, YR Park, S Lee, JK Mun 2013 Asia-Pacific Microwave Conference Proceedings (APMC), 681-684, 2013 | 13 | 2013 |
| X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology W Chang, GI Jeon, YR Park, JK Mun Microwave and Optical Technology Letters 56 (1), 96-99, 2014 | 12 | 2014 |
| Normally‐off GaN MIS‐HEMT using a combination of recessed‐gate structure and CF4 plasma treatment Y Park, J Kim, W Chang, D Jung, S Bae, J Mun, CH Jun, S Ko, E Nam physica status solidi (a) 212 (5), 1170-1173, 2015 | 11 | 2015 |
| Power semiconductor device and fabrication method thereof WJ Chang, JW Lim, HK Ahn, SC Ko, SB Bae, CW Ju, YR Park, JK Mun, ... US Patent 8,772,833, 2014 | 10 | 2014 |
| Design of Parasitic Inductance Reduction in GaN Cascode FET for High‐Efficiency Operation W Chang, YR Park, JK Mun, SC Ko ETRI Journal 38 (1), 133-140, 2016 | 9 | 2016 |
| Nitride electronic device and method for manufacturing the same SB Bae, ES Nam, JK Mun, SB Kim, HC Kim, CW Ju, SC Ko, J Lim, HK Ahn, ... US Patent 8,723,222, 2014 | 9 | 2014 |
| Nitride semiconductor device YR Park, SC Ko, W Chang, JK Mun, BAE Sung-Bum US Patent 9,136,347, 2015 | 7 | 2015 |
| Methods of manufacturing nitride semiconductor devices SC Ko, JK Mun, W Chang, BAE Sung-Bum, YR Park, CH Jun, SH Moon, ... US Patent 9,159,583, 2015 | 6 | 2015 |
| Pulse‐Mode Dynamic Ron Measurement of Large‐Scale High‐Power AlGaN/GaN HFET M Kim, Y Park, J Park, DY Jung, CH Jun, SC Ko ETRI Journal 39 (2), 292-299, 2017 | 5 | 2017 |