Giovanni Ghione

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Fabrizio BonaniProfessor of Electronics, Politecnico di Torino, Dipartimento di Elettronica eVerified email at polito.it
Michele GoanoProfessor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniVerified email at polito.it
Vittorio CamarchiaAssociate Professor of Electronics, Politecnico di TorinoVerified email at polito.it
Federica CappellutiAssociate Professor of Electronic Engineering, Politecnico di TorinoVerified email at polito.it
Gaudenzio MeneghessoUniversity of Padova, Dept. of Information EngineeringVerified email at dei.unipd.it
Paolo ColantonioUniversity of Roma Tor Vergata - Department of Electronic EngineeringVerified email at uniroma2.it
Giovanni VerzellesiProfessor of Electronics, University of Modena and Reggio Emilia, ItalyVerified email at unimore.it
Mauro FurnoNovaled GmbHVerified email at novaled.com
Ming C. WuProfessor of Electrical Engineering and Computer Sciences, University of California, BerkeleyVerified email at eecs.berkeley.edu
Fabio Lorenzo, TraversaUniversity of California San DiegoVerified email at physics.ucsd.edu
Andrea FerreroProfessor of Microwave Measurements, Politecnico of TorinoVerified email at polito.it
Aldo Di CarloProf. of Opto&Nano-electronics, University of Rome Tor Vergata. Consiglio Nazionale delle RicercheVerified email at uniroma2.it
Georgina StegmayerSinc(i)-CONICETVerified email at sinc.unl.edu.ar
Andrea RealeAssociate Professor, CHOSE and Dept. Electronic Eng. - Univ. Rome Tor VergataVerified email at ing.uniroma2.it
Tobin A. DriscollUNIDEL Professor of Mathematical Sciences, University of DelawareVerified email at udel.edu
Hans-Erik NilssonMid-Sweden UniversityVerified email at miun.se
Tibault ReveyrandCNRS Engineer, XLIMVerified email at xlim.fr
Javier Mateos (ORCID:0000-0003-404...Universidad de Salamanca, Catedrático de ElectrónicaVerified email at usal.es
Alessandro CidronaliProfessore Ordinario di Elettronica, Università di FirenzeVerified email at unifi.it
Jean-Luc AutranProfessor, Université de Rennes

Giovanni Ghione

Professore ordinario di elettronica, Politecnico di Torino

Verified email at polito.it

RF electronics Optoelectronics Electron devices Widegap semiconductors Device noise


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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ... IEEE Transactions on electron devices 48 (3), 535-542, 2001	613	2001
Coplanar waveguides for MMIC applications: Effect of upper shielding, conductor backing, finite-extent ground planes, and line-to-line coupling G Ghione, CU Naldi IEEE transactions on Microwave Theory and Techniques 35 (3), 260-267, 1987	497	1987
Semiconductor devices for high-speed optoelectronics G Ghione Cambridge University Press, 2009	280	2009
Analytical formulas for coplanar lines in hybrid and monolithic MICs G Ghione, C Naldi Electronics letters 20 (4), 179-181, 1984	279	1984
Noise in semiconductor devices F Bonani, G Ghione, F Bonani, G Ghione Noise in Semiconductor Devices: Modeling and Simulation, 1-38, 2001	214	2001
3–3.6-GHz wideband GaN Doherty power amplifier exploiting output compensation stages JM Rubio, J Fang, V Camarchia, R Quaglia, M Pirola, G Ghione IEEE Transactions on Microwave Theory and Techniques 60 (8), 2543-2548, 2012	186	2012
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN M Goano, E Bellotti, E Ghillino, G Ghione, KF Brennan Journal of Applied Physics 88 (11), 6467-6475, 2000	182	2000
Parameters of coplanar waveguides with lower ground plane G Ghione, C Naldi Electronics Letters 19 (18), 734-735, 1983	179	1983
A CAD-oriented analytical model for the losses of general asymmetric coplanar lines in hybrid and monolithic MICs G Ghione IEEE Transactions on Microwave Theory and Techniques 41 (9), 1499-1510, 1993	175	1993
An efficient approach to noise analysis through multidimensional physics-based models F Bonani, G Ghione, MR Pinto, RK Smith IEEE Transactions on Electron Devices 45 (1), 261-269, 1998	174	1998
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ... physica status solidi (a) 212 (5), 947-953, 2015	129	2015
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys and M Goano, E Bellotti, E Ghillino, C Garetto, G Ghione, KF Brennan Journal of Applied Physics 88 (11), 6476-6482, 2000	126	2000
On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal … F Bonani, G Ghione Solid-State Electronics 38 (7), 1409-1412, 1995	114	1995
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation F Bonani, SD Guerrieri, G Ghione, M Pirola IEEE Transactions on Electron Devices 48 (5), 966-977, 2001	85	2001
Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations F Bonani, G Ghione Solid-State Electronics 43 (2), 285-295, 1999	84	1999
Physics-based electron device modelling and computer-aided MMIC design F Filicori, G Ghione, CU Naldi IEEE Transactions on Microwave Theory and Techniques 40 (7), 1333-1352, 1992	78	1992
Microwave modeling and characterization of thick coplanar waveguides on oxide-coated lithium niobate substrates for electrooptical applications G Ghione, M Goano, GL Madonna, G Omegna, M Pirola, S Bosso, ... IEEE Transactions on microwave theory and techniques 47 (12), 2287-2293, 1999	77	1999
A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices G Ghione, F Filicori IEEE transactions on computer-aided design of integrated circuits and …, 1993	68	1993
Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: considerations on ink composition, nanoparticle size distribution and … A Chiolerio, M Cotto, P Pandolfi, P Martino, V Camarchia, M Pirola, ... Microelectronic Engineering 97, 8-15, 2012	67	2012
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti Applied Physics Letters 103 (8), 2013	65	2013

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