| Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts Z Wang, N Ali, TD Ngo, H Shin, S Lee, WJ Yoo Advanced Functional Materials 33 (28), 2301651, 2023 | 19 | 2023 |
| Contact resistivity in edge‐contacted graphene field effect transistors S Lee, H Choi, I Moon, H Shin, K Watanabe, T Taniguchi, WJ Yoo Advanced Electronic Materials 8 (5), 2101169, 2022 | 13 | 2022 |
| Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs K Lee, TD Ngo, S Lee, H Shin, MS Choi, J Hone, WJ Yoo Advanced Electronic Materials 9 (3), 2200955, 2023 | 11 | 2023 |
| Self‐Powered 2D MoS2/WOx/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment H Shin, M Taqi, F Ali, S Lee, MS Choi, C Kim, BH Lee, X Liu, J Sun, B Oh, ... Advanced Materials Interfaces 9 (32), 2201785, 2022 | 9 | 2022 |
| Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors S Lee, X Wang, H Shin, N Ali, TD Ngo, E Hwang, GH Kim, GY Yeom, ... ACS Applied Electronic Materials, 2024 | 7 | 2024 |
| Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering HY Le Thi, TD Ngo, NAN Phan, H Shin, I Uddin, A Venkatesan, CT Liang, ... ACS Applied Materials & Interfaces 15 (29), 35342-35349, 2023 | 5 | 2023 |
| Percolation-Based Metal–Insulator Transition in Black Phosphorus Field Effect Transistors N Ali, M Lee, F Ali, TD Ngo, H Park, H Shin, WJ Yoo ACS Applied Materials & Interfaces 15 (10), 13299-13306, 2023 | 3 | 2023 |
| Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices Z Wang, N Ali, F Ali, H Choi, H Shin, WJ Yoo ACS Applied Materials & Interfaces 14 (50), 55787-55794, 2022 | 3 | 2022 |
| Double-Side-Doped 2D TMD FET Channel K Lee, BSY Kim, MS Choi, N Ali, H Shin, D Yue, GH Kim, J Hone, WJ Yoo ACS Applied Electronic Materials, 2024 | 2 | 2024 |
| Gate-Controlled Metal to Insulator Transition in Black Phosphorus Nanosheet-Based Field Effect Transistors N Ali, M Lee, F Ali, H Shin, TD Ngo, K Watanabe, T Taniguchi, B Oh, ... ACS Applied Nano Materials 5 (12), 18376-18384, 2022 | 1 | 2022 |
| P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic Electrodes H Park, H Shin, N Ali, H Choi, BSY Kim, B Kang, MS Choi, WJ Yoo Nano Letters 25 (1), 368-375, 2024 | | 2024 |
| Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor SM Kim, JH Jun, J Lee, M Taqi, H Shin, S Lee, H Lee, WJ Yoo, BH Lee Nanomaterials 14 (20), 1667, 2024 | | 2024 |
| Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus N Ali, B Singh, PK Srivastava, F Ali, M Lee, H Park, H Shin, K Lee, H Choi, ... ACS nano 18 (18), 11978-11987, 2024 | | 2024 |
| Ohmic carrier transport at the edge-contacted 2D MoS2 field effect transistors S Lee, H Shin, WJ Yoo APS March Meeting Abstracts 2023, T00. 058, 2023 | | 2023 |
| Reliability of metallic contact properties of 2D semiconductors H Shin, K Lee, S Lee, WJ Yoo APS March Meeting Abstracts 2023, T00. 153, 2023 | | 2023 |
Won Jong YooProfessor of Sungkyunkwan UniversityVerified email at skku.edu
