| Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation A Gnudi, D Ventura, G Baccarani, F Odeh Solid-state electronics 36 (4), 575-581, 1993 | 183 | 1993 |
| Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors D Ventura, A Gnudi, G Baccarani, F Odeh Applied mathematics letters 5 (3), 85-90, 1992 | 100 | 1992 |
| Impact-ionization in silicon at large operating temperature M Valdinoci, D Ventura, MC Vecchi, M Rudan, G Baccarani, F Illien, ... 1999 International Conference on Simulation of Semiconductor Processes and …, 1999 | 67 | 1999 |
| Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation A Gnudi, D Ventura, G Baccarani IEEE transactions on computer-aided design of integrated circuits and …, 2002 | 45 | 2002 |
| One-dimensional simulation of a bipolar transistor by means of spherical harmonics expansion of the Boltzmann transport equation A Gnudi, D Ventura, G Baccarani Proc. SISDEP 4, 205-213, 1991 | 34 | 1991 |
| An efficient method for evaluating the energy distribution of electrons in semiconductors based on spherical harmonics expansion D VENTURA, A GNUDI, G BACCARANI IEICE Transactions on Electronics 75 (2), 194-199, 1992 | 29 | 1992 |
| A deterministic approach to the solution of the BTE in semiconductors D Ventura, A Gnudi, G Baccarani La Rivista del Nuovo Cimento (1978-1999) 18 (6), 1-33, 1995 | 24 | 1995 |
| Incorporating full band-structure effects in the spherical harmonics expansion of the Boltzmann transport equation MC Vecchi, D Ventura, A Gnudi, G Baccarani Proceedings of International Workshop on Numerical Modeling of processes and …, 1994 | 21 | 1994 |
| Boundary conditions for spherical harmonics expansion of Boltzmann equation D Schroeder, D Ventura, A Gnudi, G Baccarani Electronics Letters 28 (11), 995-996, 1992 | 15 | 1992 |
| The hydrodynamic model in semiconductors-coefficient calculation for the conduction band of silicon M Rudan, MC Vecchi, D Ventura PITMAN RESEARCH NOTES IN MATHEMATICS SERIES, 186-214, 1995 | 11 | 1995 |
| Short-range electron-electron scattering in silicon with a non-parabolic band structure D Ventura, A Gnudi, G Baccarani Numerical functional analysis and optimization 16 (3-4), 565-581, 1995 | 7 | 1995 |
| Two-dimensional mosfet simulation by means of a multidimensional spherical harmonics expansion of the boltzmann transport equation A Gnudi, D Ventura, G Baccarani, F Odeh Microelectronic Engineering 19 (1-4), 917-924, 1992 | 6 | 1992 |
| Inclusion of electron-electron scattering in the spherical harmonics expansion treatment of the Boltzmann transport equation D Ventura, A Gnudi, G Baccarani Simulation of Semiconductor Devices and Processes: Vol. 5, 161-164, 1993 | 5 | 1993 |
| One dimensional simulation of a bipolar transistor by means of spherical harmonics expansions of the Boltzmann equation D Ventura, A Gnudi, G Baccarani Proceedings SISDEP 91, 203-205, 1991 | 5 | 1991 |
| Mathematical problems in semiconductor physics, chapter “The Hydrodynamic Model in Semiconductors—Coefficient Calculation for the Conduction Band of Silicon” M Rudan, MC Vecchi, D Ventura Number 340, 186-214, 0 | 5 | |
| Macroscopic and microscopic approach for the simulation of short devices A Gnudi, D Ventura, G Baccarani, F Odeh Semiconductors: Part II, 135-157, 1994 | 4 | 1994 |
| Modeling Impact Ionization in a Bipolar Transistor by means of a Direct Solution of the BTE D Ventura, A Gnudi, G Baccarani NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for …, 1992 | 4 | 1992 |
| Mount Zion, on the Sides of the North D Ventura doi.org/10.979.12200/64064, 2020 | 2 | 2020 |
| A critical review of the fundamental semiconductor equations G Baccarani, F Odeh, A Gnudi, D Ventura Semiconductors: Part II, 19-32, 1994 | 2 | 1994 |
| Evidence for an early Iron-Age, Neo-Hittite textual layer in the Bible D Ventura doi.org/10.6084/m9.figshare.12977708.v1, 2020 | 1 | 2020 |
