| A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019 | 505 | 2019 |
| Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, PD Ye Nature Nanotechnology 15 (7), 585-591, 2020 | 112 | 2020 |
| Indium–tin-oxide transistors with one nanometer thick channel and ferroelectric gating M Si, J Andler, X Lyu, C Niu, S Datta, R Agrawal, PD Ye ACS nano 14 (9), 11542-11547, 2020 | 105 | 2020 |
| The resurrection of tellurium as an elemental two-dimensional semiconductor G Qiu, A Charnas, C Niu, Y Wang, W Wu, PD Ye npj 2D Materials and Applications 6 (1), 17, 2022 | 69 | 2022 |
| Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization C Niu, G Qiu, Y Wang, Z Zhang, M Si, W Wu, PD Ye Physical Review B 101 (20), 205414, 2020 | 43 | 2020 |
| BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of … M Si, A Murray, Z Lin, J Andler, J Li, J Noh, S Alajlouni, C Niu, X Lyu, ... IEEE Transactions on Electron Devices 68 (7), 3195-3199, 2021 | 31 | 2021 |
| Tunable circular photogalvanic and photovoltaic effect in 2D tellurium with different chirality C Niu, S Huang, N Ghosh, P Tan, M Wang, W Wu, X Xu, PD Ye Nano Letters 23 (8), 3599-3606, 2023 | 25 | 2023 |
| Nanometer-thick oxide semiconductor transistor with ultra-high drain current Z Lin, M Si, V Askarpour, C Niu, A Charnas, Z Shang, Y Zhang, Y Hu, ... ACS nano 16 (12), 21536-21545, 2022 | 23 | 2022 |
| Tunable chirality-dependent nonlinear electrical responses in 2d tellurium C Niu, G Qiu, Y Wang, P Tan, M Wang, J Jian, H Wang, W Wu, PD Ye Nano letters 23 (18), 8445-8453, 2023 | 21 | 2023 |
| Bilayer quantum Hall states in an n-type wide tellurium quantum well C Niu, G Qiu, Y Wang, M Si, W Wu, PD Ye Nano letters 21 (18), 7527-7533, 2021 | 19 | 2021 |
| Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing Z Zhang, Z Lin, C Niu, M Si, MA Alam, DY Peide 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 16 | 2023 |
| Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2.V−1·s−1Using HZO-Based Higher-k Linear Dielectric Z Lin, C Niu, H Jang, T Kim, Y Zhang, H Wang, C Jeong, DY Peide 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 10* | 2024 |
| Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited InO Thin-Film Transistors C Niu, Z Lin, V Askarpour, Z Zhang, P Tan, M Si, Z Shang, Y Zhang, ... IEEE Transactions on Electron Devices, 2024 | 6 | 2024 |
| Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In2O3 TFTs Reaching the Quantum Limit C Niu, Z Lin, Z Zhang, P Tan, M Si, Z Shang, Y Zhang, H Wang, PD Ye 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 6 | 2023 |
| High-pressure induced Weyl semimetal phase in 2D Tellurium C Niu, Z Zhang, D Graf, S Lee, M Wang, W Wu, T Low, PD Ye Communications Physics 6 (1), 345, 2023 | 6 | 2023 |
| Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory Z Lin, Z Zhang, C Niu, H Dou, K Xu, M Islam, JY Lin, C Sung, M Hong, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 2 | 2024 |
| Superconducting Field-Effect Transistors with PdxTe–Te Intimate Contacts C Niu, M Wang, Z Zhang, G Qiu, Y Wang, D Zheng, PY Liao, W Wu, PD Ye ACS nano, 2024 | 2 | 2024 |
| Optically Gated Electrostatic Field-Effect Thermal Transistor S Huang, N Ghosh, C Niu, YP Chen, PD Ye, X Xu Nano Letters 24 (17), 5139-5145, 2024 | 2 | 2024 |
| Wafer-Scale Atomic Layer-Deposited TeOx/Te Heterostructure P-Type Thin-Film Transistors P Tan, C Niu, Z Lin, JY Lin, L Long, Y Zhang, G Wilk, H Wang, PD Ye Nano Letters 24 (40), 12433-12441, 2024 | 1 | 2024 |
| First Demonstration of Top-Gate Enhancement-Mode ALD In2O3 FETs with High Thermal Budget of 600 °C for DRAM Applications JY Lin, Z Zhang, Z Lin, C Niu, Y Zhang, Y Zhang, T Kim, H Jang, C Sung, ... IEEE Electron Device Letters, 2024 | 1 | 2024 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
