| Review of gallium-oxide-based solar-blind ultraviolet photodetectors X Chen, F Ren, S Gu, J Ye Photonics Research 7 (4), 381-415, 2019 | 549 | 2019 |
| A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode HH Gong, XH Chen, Y Xu, FF Ren, SL Gu, JD Ye Applied Physics Letters 117 (2), 2020 | 208 | 2020 |
| Solar-blind Photodetector with High Avalanche Gains and Bias-tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures X Chen, Y Xu, D Zhou, S Yang, FF Ren, H Lu, K Tang, S Gu, R Zhang, ... ACS Applied Materials & Interfaces, 2017 | 203 | 2017 |
| Gallium oxide-based solar-blind ultraviolet photodetectors X Chen, FF Ren, J Ye, S Gu Semiconductor science and technology 35 (2), 023001, 2020 | 111 | 2020 |
| β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings HH Gong, XX Yu, Y Xu, XH Chen, Y Kuang, YJ Lv, Y Yang, FF Ren, ... Applied Physics Letters 118 (20), 2021 | 107 | 2021 |
| Deep-level defects in gallium oxide Z Wang, X Chen, FF Ren, S Gu, J Ye Journal of Physics D: Applied Physics 54 (4), 043002, 2020 | 107 | 2020 |
| Toward emerging gallium oxide semiconductors: A roadmap Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu, G Xu, C Wang, H Zhou, ... Fundamental Research 1 (6), 697-716, 2021 | 103 | 2021 |
| Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions H Gong, X Chen, Y Xu, Y Chen, F Ren, B Liu, S Gu, R Zhang, J Ye IEEE Transactions on Electron Devices 67 (8), 3341-3347, 2020 | 103 | 2020 |
| Carrier Transport and Gain Mechanisms in –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors Y Xu, X Chen, D Zhou, F Ren, J Zhou, S Bai, H Lu, S Gu, R Zhang, ... IEEE Transactions on Electron Devices 66 (5), 2276-2281, 2019 | 87 | 2019 |
| Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga2O3 Single Crystals X Chen, W Mu, Y Xu, B Fu, Z Jia, FF Ren, S Gu, R Zhang, Y Zheng, X Tao, ... ACS applied materials & interfaces 11 (7), 7131-7137, 2019 | 78 | 2019 |
| Identification and modulation of electronic band structures of single-phase β-(AlxGa1− x) 2O3 alloys grown by laser molecular beam epitaxy J Li, X Chen, T Ma, X Cui, FF Ren, S Gu, R Zhang, Y Zheng, SP Ringer, ... Applied Physics Letters 113 (4), 2018 | 73 | 2018 |
| Heteroepitaxial growth of thick α-Ga2O3 film on sapphire (0001) by MIST-CVD technique T Ma, X Chen, F Ren, S Zhu, S Gu, R Zhang, Y Zheng, J Ye Journal of Semiconductors 40 (1), 012804, 2019 | 63 | 2019 |
| On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire TC Ma, XH Chen, Y Kuang, L Li, J Li, F Kremer, FF Ren, SL Gu, R Zhang, ... Applied Physics Letters 115 (18), 2019 | 54 | 2019 |
| Fast Speed Ga2O3 Solar-Blind Schottky Photodiodes With Large Sensitive Area Y Xu, X Chen, Y Zhang, F Ren, S Gu, J Ye IEEE Electron Device Letters 41 (7), 997-1000, 2020 | 45 | 2020 |
| Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire JG Hao, TC Ma, XH Chen, Y Kuang, L Li, J Li, FF Ren, SL Gu, HH Tan, ... Applied Surface Science 513, 145871, 2020 | 39 | 2020 |
| Transition of photoconductive and photovoltaic operation modes in amorphous Ga2O3-based solar-blind detectors tuned by oxygen vacancies YF Zhang, XH Chen, Y Xu, FF Ren, SL Gu, R Zhang, YD Zheng, JD Ye Chinese Physics B 28 (2), 028501, 2019 | 39 | 2019 |
| Nanoplasmonically Enhanced High-Performance Metastable Phase α-Ga2O3 Solar-Blind Photodetectors G Qiao, Q Cai, T Ma, J Wang, X Chen, Y Xu, Z Shao, J Ye, D Chen ACS applied materials & interfaces 11 (43), 40283-40289, 2019 | 38 | 2019 |
| In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 pn heterojunction JG Hao, HH Gong, XH Chen, Y Xu, FF Ren, SL Gu, R Zhang, YD Zheng, ... Applied Physics Letters 118 (26), 2021 | 35 | 2021 |
| Ellipsometric determination of anisotropic optical constants of single phase Ga2O3 thin films in its orthorhombic and monoclinic phases M Zhao, R Tong, X Chen, T Ma, J Dai, J Lian, J Ye Optical Materials 102, 109807, 2020 | 33 | 2020 |
| Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices YT Shi, FF Ren, WZ Xu, X Chen, J Ye, L Li, D Zhou, R Zhang, Y Zheng, ... Scientific Reports 9 (1), 8796, 2019 | 33 | 2019 |
Jiandong YeNanjing UniversityVerified email at nju.edu.cn